Growth and electronic properties of Co-doped Mn3O4 thin films: a combined experimental and theoretical investigation.

In this study, we have prepared and investigated the electronic properties of a new and promising cobalt doped Mn3O4 oxide surface by site-selective and element-sensitive X-ray-absorption (XAS) and photoemission spectroscopy (XPS and resonant PES) combined with density functional theory (DFT) calculations. The crystallinity of both pristine and Co doped thin films was ensured by low energy electron diffraction measurements, in which similar diffraction patterns were obtained for both films suggesting the inclusion of the dopant species within the crystalline Mn3O4 thin film. According to our combined experimental data and theoretical calculation results, XAS measurements and replace energy calculations could identify Co impurities adopting preferentially a 2+ oxidation state substituting a Mn2+ cation on tetrahedral sites (80%) as well as the Mn3+ on octahedral sites (20%). Direct evidence of these findings could be found by comparing the pristine Mn3O4 electron absorption and photoemission spectral features with those of the doped ones. For instance, the formation of oxygen vacancies related to the formation of Co2+ in an octahedral site could be directly observed. Remarkably, the valence band spectrum of Co-Mn3O4 thin films presents additional spectral features close to the Fermi edge that can be directly attributed to Co states when compared to the PDOS obtained by the DFT calculations. It is noteworthy that the formation and stabilization of these Co dopant species in the host Mn3O4 surface could potentially affect and obviously modulate its capability for adsorption of molecular species and transfer of electrons, which makes the cobalt doped Mn3O4 surface potentially promising for catalytic applications.

Ultrahigh-vacuum organic molecular-beam deposition system for in situ growth and characterization.

A compact ultrahigh-vacuum molecular-beam deposition system has been developed for the in situ synthesis of organic thin films and multilayers. The system incorporates all the features (heater, thickness monitor, evaporators) necessary for controlled organic thin-film growth. It can be used independently, or it can be docked to the in situ growth system and transferred to other instruments of the PGM beamline, thus allowing extensive film preparation and characterization. A manipulator dedicated to specimen preparation and organic-film deposition with temperature control between 200 K and ∼800 K has been developed. The design and performance of the system are reported with emphasis on a novel solution of masks developed to achieve position-dependent film deposition. To demonstrate the enhanced capabilities of the PGM beamline in the growth and in the characterization of electronic-structure studies of organic molecular films and their heterostructures through synchrotron-based spectroscopies, this paper presents some preliminary results of a study of Fe-phthalocyanine growth on Si substrates and on in situ prepared La0.67Sr0.33MnO3 buffer layers on SrTiO3 single crystal.

Nonvortical Rashba Spin Structure on a Surface with C_{1h} Symmetry.

A totally anisotropic peculiar Rashba-Bychkov (RB) splitting of electronic bands was found on the Tl/Si(110)-(1×1) surface with C_{1h} symmetry by angle- and spin-resolved photoelectron spectroscopy and first-principles theoretical calculation. The constant energy contour of the upper branch of the RB split band has a warped elliptical shape centered at a k point located between Γ[over ¯] and the edge of the surface Brillouin zone, i.e., at a point without time-reversal symmetry. The spin-polarization vector of this state is in-plane and points almost the same direction along the whole elliptic contour. This novel nonvortical RB spin structure is confirmed as a general phenomenon originating from the C_{1h} symmetry of the surface.

CoPc 2D and 1D Arrangement on a Ferromagnetic Surface.

We investigated the growth and electronic properties of Co-phthalocyanine (CoPc) molecule deposited on iron film with different structures (pseudomorph-fcc and bcc) and on iron nanowires by scanning tunnelling microscopy and X-ray absorption spectroscopy (XAS). CoPc molecules self-assemble in a two-dimensional (2D) arrangement with the molecular plane parallel to the iron surfaces, and the local order is lost after the first layer. The molecule-ferromagnet interaction causes the broadening of Co and N unoccupied molecular states as well as different electronic distribution of N states as a function of the atomic structure of iron surface. The ferromagnetic coupling between the molecule and the iron film is dominated by the electronic interaction between Co and the first Fe layer. CoPc 2D arrangement turns into 1D by using as a template the iron nanowire grown on a facet surface of oxidized Cu(332) surface. CoPc molecules interact weakly with the iron nanowires manifesting a substantial Co 3dz spectral feature in XAS spectrum and the possibility of a magnetic interaction between Co moment and iron nanowires. Both CoPc 2D and 1D arrangements can open up new interesting scenarios to tune the magnetic properties of hybrid interfaces involving metallorganic molecules.

Peculiar Rashba splitting originating from the two-dimensional symmetry of the surface.

A peculiar Rashba effect is found at a point in the Brillouin zone, where the time-reversal symmetry is broken, though this symmetry was believed to be a necessary condition for Rashba splitting. This finding obtained experimentally by photoemission measurements on a Bi/Si(111)-(sqrt(3) x sqrt(3)) surface is fully confirmed by a first-principles theoretical calculation. We found that the peculiar Rashba effect is simply understood by the two-dimensional symmetry of the surface, and that this effect leads to an unconventional nonvortical Rashba spin structure at a point with time-reversal invariance.

Iron Phthalocyanine and Ferromagnetic Thin Films: Magnetic Behavior of Single and Double Interfaces.

Metal-phthalocyanines are quasi-planar heterocyclic macrocycle molecules with a highly conjugated structure. They can be engineered at the molecular scale (central atom, ligand) to tailor new properties for organic spintronics devices. In this study, we evaluated the magnetic behavior of FePc in a ∼1 nm molecular film sandwiched between two ferromagnetic films: cobalt (bottom) and nickel (top). In the single interface, FePc in contact with a Co film is magnetically coupled with the inorganic film magnetization, though the relatively small Fe(Pc) X-ray magnetic circular dichroism (XMCD) signal in remanence, with respect to that observed in applied field of 6 T, suggests that a fraction of molecules in the organometallic film have their magnetic moment not aligned or antiparallel with respect to Co. When in contact with two interfaces, Fe(Pc) XMCD doubles, indicating that part of the Fe(Pc) are now aligned with the Ni topmost layer, saturated at 1 T. We discussed the relevance of the finding in terms of understanding and developing hybrid organic/inorganic spin devices.

The actual electronic band structure of a rubrene single crystal.

A proper understanding on the charge mobility in organic materials is one of the key factors to realize highly functionalized organic semiconductor devices. So far, however, although a number of studies have proposed the carrier transport mechanism of rubrene single crystal to be band-like, there are disagreements between the results reported in these papers. Here, we show that the actual dispersion widths of the electronic bands formed by the highest occupied molecular orbital are much smaller than those reported in the literature, and that the disagreements originate from the diffraction effect of photoelectron and the vibrations of molecules. The present result indicates that the electronic bands would not be the main channel for hole mobility in case of rubrene single crystal and the necessity to consider a more complex picture like molecular vibrations mediated carrier transport. These findings open an avenue for a thorough insight on how to realize organic semiconductor devices with high carrier mobility.

Additive nanoscale embedding of functional nanoparticles on silicon surface.

We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO(2) layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe(2)O(4) nanoparticles patterned in lines, grids and logic structures.