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1.
Nat Mater ; 22(5): 576-582, 2023 May.
Artigo em Inglês | MEDLINE | ID: mdl-36928382

RESUMO

Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO3/SrTiO3 interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.

2.
Phys Rev Lett ; 123(19): 196403, 2019 Nov 08.
Artigo em Inglês | MEDLINE | ID: mdl-31765194

RESUMO

It has been recently established that optoelectronic and nonlinear transport experiments can give direct access to the dipole moment of the Berry curvature in nonmagnetic and noncentrosymmetric materials. Thus far, nonvanishing Berry curvature dipoles have been shown to exist in materials with substantial spin-orbit coupling where low-energy Dirac quasiparticles form tilted cones. Here, we prove that this topological effect does emerge in two-dimensional Dirac materials even in the complete absence of spin-orbit coupling. In these systems, it is the warping of the Fermi surface that triggers sizable Berry dipoles. We show indeed that uniaxially strained monolayer and bilayer graphene, with substrate-induced and gate-induced band gaps, respectively, are characterized by Berry curvature dipoles comparable in strength to those observed in monolayer and bilayer transition metal dichalcogenides.

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