Electronic and Structural Properties of MPtxB6-2x (M = Y, Yb): Structural Disorder in an Octahedral Boron Framework.

Two new ternary platinum borides, YPtxB6-2x and YbPtxB6-2x, were obtained by argon-arc melting of the elements followed by annealing at 780 °C (750 °C). The structures of these compounds combine the fragments of CaB6- and AuCu3-type structures [space group Pm3̅m; x = 1.15, a = 4.0550(4) Å and x = 1.34, a = 4.0449(2) Å for YPtxB6-2x and YbPtxB6-2x, respectively; single-crystal X-ray diffraction]. Two possible variants of B/Pt ordering (space group P4/mmm) were created via a group-subgroup approach targeting the derived stoichiometry. The architecture of the type-I YPtxB6-2x structure model (a' = a, b' = b, c' = c) combines the 4.82 boron nets alternating with the layers of Y and Pt; the type-II YPtxB6-2x structure model (a' = 2a, b' = 2b, c' = c) exhibits columns of linked [B24] truncated cubes filled with Y running along the c axis. The striking features of both structural models are [B4Pt2] octahedra. The structural similarities with hitherto reported structures (YB2C2, M2Ni21B20, MNi21B20, and ErNiB4) were drawn supporting the verity of these models. A chemical bonding analysis for type-I and type-II YPtxB6-2x based on electron localization function distribution revealed a two-center interaction forming the 4.82 boron nets for type-I YPtxB6-2x and a covalent bonding within [B4Pt2] octahedra as well as a two-center interaction for B-B intraoctahedral bonds for type-II YPtxB6-2x. Analysis of Bader charges revealed the cationic character of the yttrium atoms. The interactions for nondistorted areas of the structures agree well with the bonding picture calculated for constituent building structures, YB6 and YPt3. Electronic structure calculations predict YPtxB6-2x to be a metal with the density of states of around N(EF) = 1 states eV-1 f.u.-1. The exploration of the Y-Pt-B system in the relevant concentration range elucidated the homogeneity field of YPtxB6-2x (0.90 ≤ x ≤ 1.40) and revealed the existence of three more ternary phases at 780 °C: YPt2B (space group P6222), YPt3B (space group P4mm), and YPt5B2 (space group C2/m).

Th7 Fe3 -Type Related Structures in Pd(Pt)-Cu-B Systems: Pd6 CuB3 -A New Structure Type for Borides.

A new member of the series of Th7 Fe3 -type derivative structures, h-(Pd0.86 Cu0.14 )7 B3 (≡Pd6.02 Cu0.98 B3 , unique structure type Pd6 CuB3 , space group P63 cm, a=12.9426(9) Å, c=4.8697(4) Å, single-crystal X-ray diffraction (XRD) data) was obtained from as cast alloys and alloys annealed at 600-650 °C. Further substitution of Cu by Pd led to formation of a Mn7 C3 -type structure, o-(Pd0.93 Cu0.07 )7 B3 (≡Pd6.51 Cu0.49 B3 , space group Pnma, a=4.8971(2) Å, b=7.5353(3) Å, c=12.9743(6) Å, single-crystal XRD). Isotypic LT h-(Pt0.70 Cu0.30 )7 B3 (≡Pt4.90 Cu2.10 B3 ) was observed in the Pt-Cu-B system as a low-temperature (LT) phase (T≤600 °C) (powder XRD), whereas the Th7 Fe3 -type (high-temperature (HT) h-(Pt0.73 Cu0.27 )7 B3 ≡Pt5.11 Cu1.89 B3 , space group P63 mc, a=7.4671(1) Å, c=4.9039(1) Å, powder XRD) proved to be stable at high temperature. The three structures are built of columns of face connected metal octahedra and columns of metal tetrahedra alternatingly fused by common faces and vertices. Boron atoms are found in trigonal prisms formed by metal atoms. The volumes of the three new Th7 Fe3 -type derivative borides relate as 1:2:3. Superconductivity was discovered for Pt4.9 Cu2.1 B3 (Pd6 CuB3 -type) and Pt5.1 Cu1.9 B3 (Th7 Fe3 -type) below 0.67 and 0.66 K, respectively. Despite the close value of the transition temperature the values of the upper critical field at 0 K differ as 0.37 T and 0.27 T for the two compounds.

ScRu2B3 and Sc2RuB6: Borides Featuring a 2D Infinite Boron Clustering.

Two borides, ScRu2B3 and Sc2RuB6, were obtained by argon-arc melting of the elements followed by annealing at 800 °C. ScRu2B3 exhibits a new structure type with the space group Cmcm (a = 3.0195(2) Å, b = 15.4056(8) Å, c = 5.4492(3) Å; single crystal X-ray data; RF2 = 0.0105). Sc2RuB6 adopts the Y2ReB6-type structure (space group Pbam; a = 8.8545(2) Å, b = 11.1620(3) Å, c = 3.4760(1) Å; single crystal X-ray data; RF2 = 0.0185). ScRu2B3 displays an unusual intergrowth of CeCo3B2- and AlB2-related slabs; a striking feature is a boat configuration of puckered boron hexagons within infinite graphite like boron layers (63 nets). Sc2RuB6 presents two-dimensional planar nets of condensed boron pentagons, hexagons, and heptagons sandwiched between metal layers. In Sc/Y substituted Y2ReB6-type, Y atoms are distributed exclusively inside the boron heptagons. Exploration of the Sc-Ru-B system at 800 °C including binary boundaries employing EPMA and powder X-ray diffraction technique furthermore rules out the existence of previously reported "ScRuB4" but confirms the formation and crystal structure of Sc2Ru5B4. ScRu4B4 forms in cast alloys (LuRu4B4-type structure; space group I41/acd (No. 142), a = 7.3543(2) Å, c = 14.92137(8) Å). Cell parameters and atomic coordinates have been refined for ScRu2B3, Sc2RuB6, and ScRu4B4 in the scope of the generalized gradient approximation. Ab initio electronic structure calculations indicate a moderate electronic density of states at the Fermi level situated near the upper edge of essentially filled d-bands. Electrical resistivity measurements characterize ScRu2B3 and Sc2RuB6 as metals in concord with electronic band structure calculations.

Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, ß = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge-connected boron-filled [Pt6] trigonal prisms running infinitely along the z axis and embedding the icosahedrally coordinated Cu atom. Pt2B, (Pt1-yCuy)2B (y = 0.045), and Pt12CuB6-y (y = 3) behave metallically, as revealed by temperature-dependent electrical resistivity measurements.

Thermoelectric properties of a Mn substituted synthetic tetrahedrite.

Tetrahedrite compounds Cu(12-x)Mn(x)Sb4S13 (0 ≤x≤ 1.8) were prepared by solid state synthesis. A detailed crystal structure analysis of Cu10.6Mn1.4Sb4S13 was performed by single crystal X-ray diffraction (XRD) at 100, 200 and 300 K confirming the noncentrosymmetric structure (space group I4[combining macron]3m) of a tetrahedrite. The large atomic displacement parameter of the Cu2 atoms was described by splitting the 12e site into a partially and randomly occupied 24g site (Cu22) in addition to the regular 12e site (Cu21), suggesting a mix of dynamic and static off-plane Cu2 atom disorder. Rietveld powder XRD pattern and electron probe microanalysis revealed that all the Mn substituted samples showed a single tetrahedrite phase. The electrical resistivity increased with increasing Mn due to substitution of Mn(2+) at the Cu(1+) site. The positive Seebeck coefficient for all samples indicates that the dominant carriers are holes. Even though the thermal conductivity decreased as a function of increasing Mn, the thermoelectric figure of merit ZT decreased, because the decrease of the power factor is stronger than the decrease of the thermal conductivity. The maximum ZT = 0.76 at 623 K is obtained for Cu12Sb4S13. The coefficient of thermal expansion 13.5 ± 0.1 × 10(-6) K(-1) is obtained in the temperature range from 460 K to 670 K for Cu10.2Mn1.8Sb4S13. The Debye temperature, Θ(D) = 244 K for Cu10.2Mn1.8Sb4S13, was estimated from an evaluation of the elastic properties. The effective paramagnetic moment 7.45 µB/f.u. for Cu10.2Mn1.8Sb4S13 is fairly consistent with a high spin 3d(5) ground state of Mn.

Changes in microstructure and physical properties of skutterudites after severe plastic deformation.

The best p-type skutterudites with ZT > 1.1 so far are didymium (DD) filled, Fe/Co substituted, Sb-based skutterudites. DD0.68Fe3CoSb12 was prepared using an annealing-reacting-melting-quenching technique followed by ball milling and hot pressing. After severe plastic deformation via high-pressure torsion (HPT), no phase changes but particular structural variations were achieved, leading to modified transport properties with higher ZT values. Although after measurement-induced heating some of the HPT induced defects were annealed out, a still attractive ZT-value was preserved. In this paper we focus on explanations for these changes via TEM investigations, Raman spectroscopy and texture measurements. The grain sizes and dislocation densities, evaluated from TEM images, showed that (i) the majority of cracks generated during high-pressure torsion are healed during annealing, leaving only small pores, that (ii) the grains have grown, and that (iii) the dislocation density is decreased. While Raman spectra indicate that after HPT processing and annealing the vibration modes related to the shorter Sb-Sb bonds in the Sb4 rings are more affected than those related to the longer Sb-Sb bonds, almost no visible changes were observed in the pole intensity and/or orientation.

Enhanced thermoelectric properties of In-filled Co4Sb12 by dispersion of reduced graphene oxide.

Uniform dispersion of nanosized secondary phases in bulk thermoelectric materials has proven to be an effective strategy to reduce the lattice part of thermal conductivity and improve the thermoelectric efficiency. In this work, reduced graphene oxide (rGO) was uniformly dispersed in the In0.5Co4Sb12 bulk material by ultrasonication. The formation of impurity phases of InSb and CoSb2 in the In-filled Co4Sb12 is inevitable, as observed from XRD and EPMA analyses. The Raman spectra of the nanocomposites showed broad peaks suggesting phonon softening and additional peaks corresponding to rGO. Electron transport was not affected by rGO addition, resulting in little change in the electrical resistivity and Seebeck coefficient. The lattice thermal conductivity of the bulk material was significantly reduced by the addition of a small amount of rGO, primarily attributed to the interface scattering of phonons. Hence, the highest zT of ∼1.53 at 773 K was achieved for the In0.5Co4Sb12/0.25 vol% rGO composite in the temperature range from 723 K to 773 K.

Record-High Thermoelectric Performance in Al-Doped ZnO via Anderson Localization of Band Edge States.

Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( P F max = $PF_{\text{max}} =$  21.5 µW cm-1 K-2 and z T max = $zT_{\text{max}} =$  0.5 at 1100 K in Zn 0.96 Al 0.04 O ${\rm Zn}_{0.96} {\rm Al}_{0.04}{\rm O}$ ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

Structural and physical properties diversity of new CaCu5-type related europium platinum borides.

Three novel europium platinum borides have been synthesized by arc melting of constituent elements and subsequent annealing. They were characterized by X-ray powder and single-crystal diffraction: EuPt4B, CeCo4B type, P6/mmm, a = 0.56167(2) nm, c = 0.74399(3) nm; Eu3Pt7B2, Ca3Al7Cu2 type as an ordered variant of PuNi3, R3m, a = 0.55477(2) nm, c = 2.2896(1) nm; and Eu5Pt18B(6-x), a new unique structure type, Fmmm, a = 0.55813(3) nm, b = 0.95476(5) nm, c = 3.51578(2) nm. These compounds belong to the CaCu5 family of structures, revealing a stacking sequence of CaCu5-type slabs with different structural units: CaCu5 and CeCo3B2 type in EuPt4B; CeCo3B2 and Laves MgCu2 type in Eu3Pt7B2; and CaCu5-, CeCo3B2-, and site-exchange ThCr2Si2-type slabs in Eu5Pt18B(6-x). The striking motif in the Eu5Pt18B(6-x) structure is the boron-centered Pt tetrahedron [BPt4], which build chains running along the a axis and plays a decisive role in the structure arrangement by linking the terminal fragments of repeating blocks of fused Eu polyhedra. Physical properties of two compounds, EuPt4B and Eu3Pt7B2, were studied. Both compounds were found to order magnetically at 36 and 57 K, respectively. For EuPt4B a mixed-valence state of the Eu atom was confirmed via magnetic and specific heat measurements. Moreover, the Sommerfeld value of the specific heat of Eu3Pt7B2 was found to be extraordinarily large, on the order of 0.2 J/mol K(2).

Electronic and structural properties of Y6Pt13X4, site occupancy variants of the Ba6Na16N subnitride (X = Al, Ga).

The existence of new ternary compounds Y6Pt13X4 (X = Al, Ga) with the site occupancy variant of the subnitride Ba6Na16N (space group Im3̄m, no. 229) has been established for the first time by single crystal and powder X-ray diffraction from alloys annealed at 600 °C. The striking structural units in these compounds are platinum centered [PtY6] octahedra interconnected via Y-Y bonds and embedded in the XPt3 framework. The structural similarities with the Ce3Ni6Si2-type compounds are discussed. Electronic density of states calculated in the framework of DFT claims the compounds to be metals. The electronic band structures of both compounds resemble each other due to intrinsic similarities in the crystal structures. The analysis of bonding within and between structural fragments based on evaluation of electronic structures, Bader charges and ELF distributions in Y6Pt13X4 (X = Al, Ga) suggests the overall picture of these phases as polar intermetallics, containing a mixture of electrostatically driven interactions (such as those between complementary charged yttrium and platinum) and metallic bonding (such as Pt-Al (Ga), Pt-Pt and Y-Al (Ga)).

Cage compound Sc5Pt24B12: a Pt-stuffed variant of filled skutterudite structure. Electronic and structural properties.

The title compound was obtained from elements via arc melting and its crystal structure was determined from single-crystal X-ray diffraction data (space group Im3̄, a = 10.2042(6) Å). The refinement indicated the occupancy of icosahedral 2a and cubooctahedral 8c sites solely by Sc atoms which leads to the composition Sc5Pt24B12 in contrast to the previously reported ternary stannides of Gd3Ni8Sn16 type (RE5-xM12Sn24(+x) compounds). The compound is the first representative of borides crystallizing with a site exchange variant of this stannide structure type. The structural relationships of the boride structure and filled skutterudite LaFe4P12vs. the Remeika phase of Yb3Rh4Sn13-type are discussed. Analysis of chemical bonding classifies Sc5Pt24B12 as a cage compound exhibiting the ionic interaction of cationic scandium species in the cages of anionic framework, formed by covalently bonded B and Pt atoms. Electronic structure calculations show that the electronic states of atoms centered around the cubooctahedral 8c site, i.e. Sc2 3d-, Pt2 5d- and B 2p-states dominate the density of states (DOS) at the Fermi level EF. Strong effect of spin-orbit coupling on the band structure at the gamma point has been found from density functional theory calculations. Sc5Pt24B12 exhibits superconductivity with a transition temperature of TC = 2.45 K.

High thermoelectric performance in metallic NiAu alloys via interband scattering.

Thermoelectric materials seamlessly convert thermal into electrical energy, making them promising for power generation and cooling applications. Although historically the thermoelectric effect was first discovered in metals, state-of-the-art research focuses on semiconductors. Here, we discover unprecedented thermoelectric performance in metals and realize ultrahigh power factors up to 34 mW m-1 K-2 in binary NixAu1-x alloys, more than twice larger than in any bulk material above room temperature, reaching zTmax ∼ 0.5. In metallic NixAu1-x alloys, large Seebeck coefficients originate from electron-hole selective scattering of Au s electrons into more localized Ni d states. This intrinsic energy filtering effect owing to the unique band structure yields a strongly energy-dependent carrier mobility. While the metastable nature of the Ni-Au system as well as the high cost of Au pose some constraints for practical applications, our work challenges the common belief that good metals are bad thermoelectrics and presents an auspicious route toward high thermoelectric performance exploiting interband scattering.

Anderson transition in stoichiometric Fe2VAl: high thermoelectric performance from impurity bands.

Discovered more than 200 years ago in 1821, thermoelectricity is nowadays of global interest as it enables direct interconversion of thermal and electrical energy via the Seebeck/Peltier effect. In their seminal work, Mahan and Sofo mathematically derived the conditions for 'the best thermoelectric'-a delta-distribution-shaped electronic transport function, where charge carriers contribute to transport only in an infinitely narrow energy interval. So far, however, only approximations to this concept were expected to exist in nature. Here, we propose the Anderson transition in a narrow impurity band as a physical realisation of this seemingly unrealisable scenario. An innovative approach of continuous disorder tuning allows us to drive the Anderson transition within a single sample: variable amounts of antisite defects are introduced in a controlled fashion by thermal quenching from high temperatures. Consequently, we obtain a significant enhancement and dramatic change of the thermoelectric properties from p-type to n-type in stoichiometric Fe2VAl, which we assign to a narrow region of delocalised electrons in the energy spectrum near the Fermi energy. Based on our electronic transport and magnetisation experiments, supported by Monte-Carlo and density functional theory calculations, we present a novel strategy to enhance the performance of thermoelectric materials.

Preferential phonon scattering and low energy carrier filtering by interfaces of in situ formed InSb nanoprecipitates and GaSb nanoinclusions for enhanced thermoelectric performance of In0.2Co4Sb12.

Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by combining these two approaches-inserting In into the voids of skutterudite Co4Sb12 as well as dispersing nanoparticles (GaSb)-we have synthesized various samples via ball-milling and spark plasma sintering. InSb as the secondary phase of the matrix, mixed with GaSb, forms the solid solution Ga1-xInxSb. Nanocrystalline grains together with a few larger grains (10-30 µm) are found to be spread in In0.2Co4Sb12. The former is comprised of either InSb, GaSb or Ga1-xInxSb. Because of their identical space group and similar lattice parameters, InSb, GaSb and Ga1-xInxSb could not be detected separately in EBSD. High resolution transmission electron microscopy (HRTEM) was used to resolve different phases, which showed GaSb grains of size ∼10-30 nm and InSb grains of size ∼30-100 nm. Scattering of charge carriers at the interfaces of InSb, GaSb and Ga1-xInxSb as well as the matrix phases increased both the electrical resistivity and Seebeck coefficient. The multi-scale size distribution of grains, of both the matrix phase and the secondary phases, scattered phonons within a broad wavelength range, resulting in very low lattice thermal conductivities. As a result, an enhanced figure of merit of 1.4 was achieved for the (GaSb)0.1 + In0.2Co4Sb12 nanocomposite at 773 K.

Enhanced Thermoelectric Performance in the Ba0.3Co4Sb12/InSb Nanocomposite Originating from the Minimum Possible Lattice Thermal Conductivity.

The thermoelectric efficiency of skutterudite materials can be improved by lowering the lattice thermal conductivity via the uniform dispersion of a nanosized second phase in the matrix of filled Co4Sb12. In this work, nanocomposites of Ba0.3Co4Sb12 and InSb were synthesized using ball-milling and spark plasma sintering. The thermoelectric transport properties were studied from 4.2 to 773 K. The InSb nanoparticles of ∼20 nm were found to be dispersed in the Ba0.3Co4Sb12 grains with a few larger grains of about 10 µm due to the agglomeration of the InSb nanoparticles. The +2 oxidation state of Ba in Co4Sb12 resulted in a low electrical resistivity, ρ, value of the matrix. The enhancement of the Seebeck coefficient, S, and the electrical resistivity values of Ba0.3Co4Sb12 with the addition of InSb can be credited to the energy-filtering effect of electrons with low energy at the interfaces. The power factor of the composites could not be enhanced compared to the matrix because of the very high ρ value. A minimum possible lattice thermal conductivity (0.45 W/m·K at 773 K) was achieved due to the combined effect of rattling of Ba atoms in the voids and enhanced phonon scattering at the interfaces induced by nanosized InSb particles. As a result, the (InSb)0.15 + Ba0.3Co4Sb12 composite exhibited improved thermoelectric properties with the highest zT of 1.4 at 773 K and improved mechanical properties with a higher hardness, higher Young's modulus, and lower brittleness.

Fourier optics of image formation in LEEM.

A Fourier optics calculation of image formation in low energy electron microscopy (LEEM) is presented. The adaptation of the existing theory for transmission electron microscopy to the treatment of LEEM and other forms of cathode lens electron microscopy is explained. The calculation incorporates imaging errors that are caused by the objective lens (aberrations), contrast aperture (diffraction), imperfect source characteristics, and voltage and current instabilities. It is used to evaluate the appearance of image features that arise from phase objects such as surface steps and amplitude objects that produce what is alternatively called amplitude, reflectivity or diffraction contrast in LEEM. This formalism can be used after appropriate modification to treat image formation in other emission microscopies. Implications for image formation in the latest aberration-corrected instruments are also discussed.

Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin films.

MnAs epitaxial thin films on GaAs(001) single crystalline substrates crystallize at room temperature (RT) in a mixture of two crystalline phases with distinct magnetic properties, organized as stripes along the MnAs [0001] direction. This particular morphology is driven by anisotropic epitaxial strain. We elucidate here the physical mechanisms at the origin of size reduction effect on the MnAs crystalline phase transition. We investigated the structural and magnetic changes in MnAs patterned microstructures (confined geometry) when the lateral dimension is reduced to values close to the periodicity and width of the stripes observed in continuous films. The effects of the microstructure's lateral size, shape and orientation (with respect to the MnAs [Formula: see text] direction) were characterized by local probe synchrotron X-ray diffraction (µ-XRD) using a focused X-ray beam, X-ray Magnetic Circular Dichroïsm - Photo Emission Electron Microscopy (XMCD-PEEM) and Low Energy Electron Microscopy (LEEM). Changes in the transition temperature and the crystalline phase distribution inside the microstructures are evidenced and quantitatively measured. The effect of finite size and strain relaxation on the magnetic domain structure is also discussed. Counter-intuitively, we demonstrate here that below a critical microstructure size, bulk MnAs structural and magnetic properties are restored. To support our observations we developed, tested and validated a model based on the size-dependence of the elastic energy and strain relaxation to explain this phase re-distribution in laterally confined geometry.

Pressure-induced anomalous valence crossover in cubic YbCu5-based compounds.

A pressure-induced anomalous valence crossover without structural phase transition is observed in archetypal cubic YbCu5 based heavy Fermion systems. The Yb valence is found to decrease with increasing pressure, indicating a pressure-induced crossover from a localized 4f 13 state to the valence fluctuation regime, which is not expected for Yb systems with conventional c-f hybridization. This result further highlights the remarkable singularity of the valence behavior in compressed YbCu5-based compounds. The intermetallics Yb2Pd2Sn, which shows two quantum critical points (QCP) under pressure and has been proposed as a potential candidate for a reentrant Yb2+ state at high pressure, was also studied for comparison. In this compound, the Yb valence monotonically increases with pressure, disproving a scenario of a reentrant non-magnetic Yb2+ state at the second QCP.

Boron induced structure modifications in Pd-Cu-B system: new Ti2Ni-type derivative borides Pd3Cu3B and Pd5Cu5B2.

The formation of two distinct derivative structures of Ti2Ni-type, interstitial Pd3Cu3B and substitutive Pd5Cu5B2, has been elucidated in Pd-Cu-B alloys from analysis of X-ray single crystal and powder diffraction data and supported by SEM. The metal atom arrangement in the new boride Pd3Cu3B (space group Fd3m, W3Fe3C-type structure, a = 1.1136(3) nm) follows the pattern of atom distribution in the CdNi-type structure. Pd5Cu5B2 (space group F(4)3m, a = 1.05273(5) nm) exhibits a non-centrosymmetric substitutive derivative of the Ti2Ni-type structure. The reduction of symmetry on passing from Ti2Ni-type structure to Pd5Cu5B2 corresponds to the loss of an inversion centre delivered by an ordered occupation of the Ni position (32e) by dissimilar atoms, Cu and B. In both structures, the boron atom centers Pd forming [BPd6] octahedra in Pd3Cu3B and [BPd6] trigonal prisms in Pd5Cu5B2. Neither a perceptible homogeneity range nor mutual solid solubility was observed for two compounds at 600 °C, while in as cast conditions Pd5Cu5B2 exhibits an extended homogeneity range formed by a partial substitution of Cu atoms (in 24f) by Pd (Pd5+xCu5-xB2, 0 ≤x≤ 1). Electrical resistivity measurements performed on Pd3Cu3B as well as on Pd-poor and Pd-rich termini of Pd5+xCu5-xB2 annealed at 600 °C and in as cast conditions respectively demonstrated the absence of any phase transitions for this compounds in the temperature region from 0.3 K to 300 K.

BaAl4 derivative phases in the sections {La,Ce}Ni2Si2-{La,Ce}Zn2Si2: phase relations, crystal structures and physical properties.

Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.125 for La(Ni1-xZnx)2Si2. For higher Zn-contents 0.25 ≤ x ≤ 0.55 the solutions adopt the CaBe2Ge2-type (P4/nmm). The investigations are backed by single crystal X-ray diffraction data for Ce(Ni0.61Zn0.39)2Si2 (P4/nmm; a = 0.41022(1) nm, c = 0.98146(4) nm; RF = 0.012) and by Rietveld refinement for La(Ni0.56Zn0.44)2Si2 (P4/nmm; a = 0.41680(6) nm, c = 0.99364(4) nm; RF = 0.043). Interestingly, the Ce-Zn-Si system contains a ternary phase CeZn2(Si1-xZnx)2 of the ThCr2Si2 structure type (0.25 ≤ x ≤ 0.30 at 600 °C), which forms peritectically at T = 695 °C but does not include the composition "CeZn2Si2". The primitive high temperature tetragonal phase with the CaBe2Ge2-type has also been observed for the first time in the Ce-Ni-Si system at CeNi2+xSi2-x, x = 0.33 (single crystal data, P4/nmm; a = 0.40150(2) nm, c = 0.95210(2) nm; RF = 0.0163). Physical properties (from 400 mK to 300 K) including specific heat, electrical resistivity and magnetic susceptibility have been elucidated for Ce(Ni0.61Zn0.39)2Si2 and La(Ni0.56Zn0.44)2Si2. Ce(Ni0.61Zn0.39)2Si2 exhibits a Kondo-type ground state. Low temperature specific heat data of La(Ni0.56Zn0.44)2Si2 suggest a spin fluctuation scenario with an enhanced value of the Sommerfeld constant.