Investigating the Role of Surface Roughness and Defects on EC Breakdown, as a Precursor to SEI Formation in Hard Carbon Sodium-Ion Battery Anodes.

Hard carbon (HC) anodes together with ethylene carbonate (EC)-based electrolytes have shown significant promise for high-performing sodium-ion batteries. However, questions remain in relation to the initial contact between the carbon surface and the EC molecules. The surface of the HC anode is complex and can contain both flat pristine carbon surfaces, curvature, nanoscale roughness, and heteroatom defects. Combining density functional theory and experiments, the effect of different carbon surface motifs and defects on EC adsorption are probed, concluding that EC itself does not block any sodium storage sites. Nevertheless, the EC breakdown products do show strong adsorption on the same carbon surface motifs, indicating that the carbon surface defect sites can become occupied by the EC breakdown products, leading to competition between the sodium and EC fragments. Furthermore, it is shown that the EC fragments can react with a carbon vacancy or oxygen defect to give rise to CO2 formation and further oxygen functionalization of the carbon surface. Experimental characterization of two HC materials with different microstructure and defect concentrations further confirms that a significant concentration of oxygen-containing defects and disorder leads to a thicker solid electrolyte interphase, highlighting the significant effect of atomic-scale carbon structure on EC interaction.

Defects in Hard Carbon: Where Are They Located and How Does the Location Affect Alkaline Metal Storage?

Hard carbon anodes have shown significant promise for next-generation battery technologies. These nanoporous carbon materials are highly complex and vary in structure depending on synthesis method, precursors, and pyrolysis temperature. Structurally, hard carbons are shown to consist of disordered planar and curved motifs, which have a dramatic impact on anode performance. Here, the impact of position on defect formation energy is explored through density functional theory simulations, employing a mixed planar bulk and curved surface model. At defect sites close to the surface, a dramatic decrease ( ≥ 50%) in defect formation energy is observed for all defects except the nitrogen substitutional defect. These results confirm the experimentally observed enhanced defect concentration at surfaces. Previous studies have shown that defects have a marked impact on metal storage. This work explores the interplay between position and defect type for lithium, sodium, and potassium adsorption. Regardless of defect location, it is found that the energetic contributions to the metal adsorption energies are principally dictated by the defect type and carbon interlayer distance.

Combined density functional theory and molecular dynamics study of Sm0.75A0.25Co1-xMnxO2.88 (A = Ca, Sr; x = 0.125, 0.25) cathode material for next generation solid oxide fuel cell.

One of the main challenges facing solid oxide fuel cell (SOFC) technology is the need to develop materials capable of functioning at intermediate temperatures (500-800 °C), thereby reducing the costs associated with SOFCs. Here, Sm0.75A0.25MnxCo1-xO2.88 (A = Ca, or Sr) is investigated as a potential new cathode material to substitute the traditional lanthanum-strontium manganate for intermediate temperature SOFCs. Using a combination of density functional theory calculations and molecular dynamics simulations, the crucial parameters for SOFC performance, such as the electronic structure, electronic and ionic conductivity, and thermal expansion coefficient, were evaluated. An evaluation of the results illustrates that the conductivity and thermal match of the materials with the electrolyte is dramatically improved with respect to the existing state-of-the-art.

Filling a Niche in "Ligand Space" with Bulky, Electron-Poor Phosphorus(III) Alkoxides.

The chemistry of phosphorus(III) ligands, which are of key importance in coordination chemistry, organometallic chemistry and catalysis, is dominated by relatively electron-rich species. Many of the electron-poor PIII ligands that are readily available have relatively small steric profiles. As such, there is a significant gap in "ligand space" where more sterically bulky, electron-poor PIII ligands are needed. This contribution discusses the coordination chemistry, steric and electronic properties of PIII ligands bearing highly fluorinated alkoxide groups of the general form PRn (ORF )3-n , where R=Ph, RF =C(H)(CF3 )2 and C(CF3 )3 ; n=1-3. These ligands are simple to synthesize and a range of experimental and theoretical methods suggest that their steric and electronic properties can be "tuned" by modification of their substituents, making them excellent candidates for large, electron-poor ligands.

The origin of negative charging in amorphous Al2O3 films: the role of native defects.

Amorphous aluminum oxide Al2O3 (a-Al2O3) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive density functional theory calculations of native defects-O and Al vacancies and interstitials, as well as H interstitial centers-in different charge states in both crystalline α-Al2O3 and in a-Al2O3. The results demonstrate that both the charging process and the energy distribution of traps responsible for negative charging of a-Al2O3 films (Zahid et al 2010 IEEE Trans. Electron Devices 57 2907) can be understood assuming that the negatively charged Oi and VAl defects are nearly compensated by the positively charged Hi, VO and Ali defects in as prepared samples. Following electron injection, the states of Ali, VO or Hi in the band gap become occupied by electrons and sample becomes negatively charged. The optical excitation energies from these states into the oxide conduction band agree with the results of exhaustive photo-depopulation spectroscopy measurements (Zahid et al 2010 IEEE Trans. Electron Devices 57 2907). This new understanding of the origin of negative charging of a-Al2O3 films is important for further development of nanoelectronic devices and solar cells.

Computational study of the mixed B-site perovskite SmBxCo1-xO3-d (B = Mn, Fe, Ni, Cu) for next generation solid oxide fuel cell cathodes.

SmCoO3 is a promising perovskite material for the next generation of intermediate temperature solid oxide fuel cells (SOFC), but its potential application is directly linked to, and dependent on, the presence of dopant ions. Doping on the Co-site is suggested to improve the catalytic and electronic properties of this cathode material. Fe, Mn, Ni, and Cu have been proposed as possible dopants and experimental studies have investigated and confirmed the potential of these materials. Here we present a systematic DFT+U study focused on the changes in electronic, magnetic, and physical properties with B-site doping of SmCoO3 to allow cathode optimization. It is shown that doping generally leads to distortion in the system, thereby inducing different electron occupations of the Co d-orbitals, altering the electronic and magnetic structure. From these calculations, the 0 K electronic conductivity (σe) was obtained, with SmMnxCo1-xO3 having the highest σe, and SmFexCo1-xO3 the lowest σe, in agreement with experiment. We have also investigated the impact of dopant species and concentration on the oxygen vacancy formation energy (Ef), which is related to the ionic conductivity (σO). We found that the Ef values are lowered only when SmCoO3 is doped with Cu or Ni. Finally, thermal expansion coefficients were calculated, with Mn-doping showing the largest decrease at low x and at x = 0.75. Combining these results, it is clear that Mn-doping in the range x = 0.125-0.25 would imbue SmCoO3 with the most favorable properties for IT-SOFC cathode applications.

From Jekyll to Hyde and Beyond: Hydrogen's Multifaceted Role in Passivation, H-Induced Breakdown, and Charging of Amorphous Silicon Nitride.

In semiconductor devices, hydrogen has traditionally been viewed as a panacea for defects, being adept at neutralizing dangling bonds and consequently purging the related states from the band gap. With amorphous silicon nitride (a-Si3N4)─a material critical for electronic, optical, and mechanical applications─this belief holds true as hydrogen passivates both silicon and nitrogen dangling bonds. However, there is more to the story. Our density functional theory calculations unveil hydrogen's multifaceted role upon incorporation in a-Si3N4. On the "Jekyll" side, hydrogen atoms are indeed restorative, healing coordination defects in a-Si3N4. However, "Hyde" emerges as hydrogen induces Si-N bond breaking, particularly in strained regions of the amorphous network. Beyond these dual roles, our study reveals an intricate balance between hydrogen defect centers and intrinsic charge traps that already exist in pristine a-Si3N4: the excess charges provided by the H atoms result in charging of the a-Si3N4 dielectric layer.

Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface.

Silica-based resistive random access memory devices have become an active research area due to complementary metal-oxide-semiconductor compatibility and recent dramatic increases in their performance and endurance. In spite of both experimental and theoretical insights gained into the electroforming process, many atomistic aspects of the set and reset operation of these devices are still poorly understood. Recently a mechanism of electroforming process based on the formation of neutral oxygen vacancies (VO0) and interstitial O ions (Oi2-) facilitated by electron injection into the oxide has been proposed. In this work, we extend the description of the bulk (Oi2-) migration to the interface of amorphous SiO2 with the polycrystaline TiN electrode, using density functional theory simulations. The results demonstrate a strong kinetic and thermodynamic drive for the movement of Oi2- to the interface, with dramatically reduced incorporation energies and migration barriers close to the interface. The arrival of Oi2- at the interface is accompanied by preferential oxidation of undercoordinated Ti sites at the interface, forming a Ti-O layer. We investigate how O ions incorporate into a perfect and defective ∑5(012)[100] grain boundary (GB) in TiN oriented perpendicular to the interface. Our simulations demonstrate the preferential incorporation of Oi at defects within the TiN GB and their fast diffusion along a passivated grain boundary. They explain how, as a result of electroforming, the system undergoes very significant structural changes with the oxide being significantly reduced, interface being oxidized, and part of the oxygen leaving the system.