Detalhe da pesquisa
1.
Regulating the electronic properties of the WGe2N4 monolayer by adsorption of 4d transition metal atoms towards spintronic devices.
Phys Chem Chem Phys;
25(38): 26270-26277, 2023 Oct 04.
Artigo
em Inglês
| MEDLINE
| ID: mdl-37743842
2.
Schottky diodes based on blue phosphorene nanoribbon homojunctions.
Phys Chem Chem Phys;
24(47): 29057-29063, 2022 Dec 07.
Artigo
em Inglês
| MEDLINE
| ID: mdl-36437710
3.
An ultra-sensitive gas sensor based on a two-dimensional manganese porphyrin monolayer.
Phys Chem Chem Phys;
23(20): 11852-11862, 2021 May 26.
Artigo
em Inglês
| MEDLINE
| ID: mdl-33988194
4.
Pervasive Ohmic contacts of monolayer 4-hT2 graphdiyne transistors.
Nanotechnology;
31(22): 225705, 2020 May 29.
Artigo
em Inglês
| MEDLINE
| ID: mdl-31995789
5.
Surface decoration of phosphorene nanoribbons with 4d transition metal atoms for spintronics.
Phys Chem Chem Phys;
22(28): 16063-16071, 2020 Jul 22.
Artigo
em Inglês
| MEDLINE
| ID: mdl-32633289
6.
Anisotropic interfacial properties of monolayer C2N field effect transistors.
Phys Chem Chem Phys;
22(48): 28074-28085, 2020 Dec 23.
Artigo
em Inglês
| MEDLINE
| ID: mdl-33289744
7.
Surface engineering of phosphorene nanoribbons by transition metal heteroatoms for spintronics.
Phys Chem Chem Phys;
21(9): 4879-4887, 2019 Feb 27.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30778495
8.
Two-dimensional MoSi2As4-based field-effect transistors integrating switching and gas-sensing functions.
Nanoscale;
15(20): 9106-9115, 2023 May 25.
Artigo
em Inglês
| MEDLINE
| ID: mdl-37133349