Effect of indium alloying on the charge carrier dynamics of thick-shell InP/ZnSe quantum dots.

Thick-shell InP/ZnSe III-V/II-VI quantum dots (QDs) were synthesized with two distinct interfaces between the InP core and ZnSe shell: alloy and core/shell. Despite sharing similar optical properties in the spectral domain, these two QD systems have differing amounts of indium incorporation in the shell as determined by high-resolution energy-dispersive x-ray spectroscopy scanning transmission electron microscopy. Ultrafast fluorescence upconversion spectroscopy was used to probe the charge carrier dynamics of these two systems and shows substantial charge carrier trapping in both systems that prevents radiative recombination and reduces the photoluminescence quantum yield. The alloy and core/shell QDs show slight differences in the extent of charge carrier localization with more extensive trapping observed in the alloy nanocrystals. Despite the ability to grow a thick shell, structural defects caused by III-V/II-VI charge carrier imbalances still need to be mitigated to further improve InP QDs.

Chemical Structure, Ensemble and Single-Particle Spectroscopy of Thick-Shell InP-ZnSe Quantum Dots.

Thick-shell (>5 nm) InP-ZnSe colloidal quantum dots (QDs) grown by a continuous-injection shell growth process are reported. The growth of a thick crystalline shell is attributed to the high temperature of the growth process and the relatively low lattice mismatch between the InP core and ZnSe shell. In addition to a narrow ensemble photoluminescence (PL) line-width (∼40 nm), ensemble and single-particle emission dynamics measurements indicate that blinking and Auger recombination are reduced in these heterostructures. More specifically, high single-dot ON-times (>95%) were obtained for the core-shell QDs, and measured ensemble biexciton lifetimes, τ2x ∼ 540 ps, represent a 7-fold increase compared to InP-ZnS QDs. Further, high-resolution energy dispersive X-ray (EDX) chemical maps directly show for the first time significant incorporation of indium into the shell of the InP-ZnSe QDs. Examination of the atomic structure of the thick-shell QDs by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) reveals structural defects in subpopulations of particles that may mitigate PL efficiencies (∼40% in ensemble), providing insight toward further synthetic refinement. These InP-ZnSe heterostructures represent progress toward fully cadmium-free QDs with superior photophysical properties important in biological labeling and other emission-based technologies.

Ultrafast spectroscopy studies of carrier dynamics in semiconductor nanocrystals.

Semiconductor nanocrystals have become ubiquitous both in scientific research and in applied technologies related to light. When a nanocrystal absorbs a photon an electron-hole pair is created whose fate dictates whether the nanocrystal will be suitable for a particular application. Ultrafast spectroscopy provides a real-time window to monitor the evolution of the electron-hole pair. In this review, we focus on CdSe nanocrystals, the most-studied nanocrystal system to date, and also highlight ultrasmall nanocrystals, "standard nanocrystals" of different binary composition, alloyed nanocrystals, and core/shell nanocrystals and nanorods. We focus on four time-resolved spectroscopies used to interrogate nanocrystals: pump-probe, fluorescence upconversion, time-correlated single photon counting, and non-linear spectroscopies. The basics of the nanocrystals and the spectroscopies are presented, followed by a detailed synopsis of ultrafast spectroscopy studies performed on the various semiconductor nanocrystal systems.

Role of Surface Morphology on Exciton Recombination in Single Quantum Dot-in-Rods Revealed by Optical and Atomic Structure Correlation.

The physical structure of colloidal quantum dot (QD) nanostructures strongly influences their optical and electronic behavior. A fundamental understanding of this interplay between structure and function is crucial to fully tailor the performance of QDs and their assemblies. Here, by directly correlating the atomic and chemical structure of single CdSe-CdS quantum dot-in-rods with time-resolved fluorescence measurements on the same structures, we identify morphological irregularities at their surfaces that moderate photoluminescence efficiencies. We find that two nonradiative exciton recombination mechanisms are triggered by these imperfections: charging and trap-assisted nonradiative processes. Furthermore, we show that the proximity of the surface defects to the CdSe core of the core-shell structures influences whether the charging or trap-assisted nonradiative channel dominates exciton recombination. Our results extend to other QD nanostructures and emphasize surface roughness as a crucial parameter when designing colloidal QDs with specific excitonic fates.