Spontaneous Spin and Valley Symmetry-Broken States of Interacting Massive Dirac Fermions in a Bilayer Graphene Quantum Dot.

We predict the existence of spontaneous spin and valley symmetry-broken states of interacting massive Dirac Fermions in a gated bilayer graphene quantum dot based on the exact diagonalization of the many-body Hamiltonian. The dot is defined by a vertical electric field and lateral gates, and its single-particle (SP) energies, wave functions, and Coulomb matrix elements are computed by using the atomistic tight-binding model. The effect of the Coulomb interaction is measured by the ratio of Coulomb elements to the SP level spacing. As we increase the interaction strength, we find the electrons in a series of spin and valley symmetry-broken phases with increasing valley and spin polarizations. The phase transitions result from the competition of the SP, exchange, and correlation energy scales. A phase diagram for N = 1-6 electrons is mapped out as a function of the Coulomb interaction strength.

Theory of Excitons in Gated Bilayer Graphene Quantum Dots.

We present a theory of excitons in gated bilayer graphene (BLG) quantum dots (QDs). Electrical gating of BLG opens an energy gap, turning this material into an electrically tunable semiconductor. Unlike in laterally gated semiconductor QDs, where electrons are attracted and holes repelled, we show here that lateral structuring of metallic gates results in a gated lateral QD confining both electrons and holes. Using an accurate atomistic approach and exact diagonalization tools, we describe strongly interacting electrons and holes forming an electrically tunable exciton. We find these excitons to be different from those found in semiconductor QDs and nanocrystals, with exciton energy tunable by voltage from the terahertz to far infrared (FIR) range. The conservation of spin, valley, and orbital angular momentum results in an exciton fine structure with a band of dark low-energy states, making this system a promising candidate for storage, detection and emission of photons in the terahertz range.

Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy.

Colloidal quantum dots (CQDs) feature a low degeneracy of electronic states at the band edges compared with the corresponding bulk material, as well as a narrow emission linewidth. Unfortunately for potential laser applications, this degeneracy is incompletely lifted in the valence band, spreading the hole population among several states at room temperature. This leads to increased optical gain thresholds, demanding high photoexcitation levels to achieve population inversion (more electrons in excited states than in ground states-the condition for optical gain). This, in turn, increases Auger recombination losses, limiting the gain lifetime to sub-nanoseconds and preventing steady laser action. State degeneracy also broadens the photoluminescence linewidth at the single-particle level. Here we demonstrate a way to decrease the band-edge degeneracy and single-dot photoluminescence linewidth in CQDs by means of uniform biaxial strain. We have developed a synthetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell growth on the (0001) facet of wurtzite CdSe cores, producing asymmetric compressive shells that create built-in biaxial strain, while still maintaining excellent surface passivation (preventing defect formation, which otherwise would cause non-radiative recombination losses). Our synthesis spreads the excitonic fine structure uniformly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulated. We thereby reduce the optical gain threshold and demonstrate continuous-wave lasing from CQD solids, expanding the library of solution-processed materials that may be capable of continuous-wave lasing. The individual CQDs exhibit an ultra-narrow single-dot linewidth, and we successfully propagate this into the ensemble of CQDs.

Atomistic Design of CdSe/CdS Core-Shell Quantum Dots with Suppressed Auger Recombination.

We design quasi-type-II CdSe/CdS core-shell colloidal quantum dots (CQDs) exhibiting a suppressed Auger recombination rate. We do so using fully atomistic tight-binding wave functions and microscopic Coulomb interactions. The recombination rate as a function of the core and shell size and shape is tested against experiments. Because of a higher density of deep hole states and stronger hole confinement, Auger recombination is found to be up to six times faster for positive trions compared to negative ones in 4 nm core/10 nm shell CQDs. Soft-confinement at the interface results in weak suppression of Auger recombination compared to same-bandgap sharp-interface CQDs. We find that the suppression is due to increased volume of the core resulting in delocalization of the wave functions, rather than due to soft-confinement itself. We show that our results are consistent with previous effective mass models with the same system parameters. Increasing the dot volume remains the most efficient way to suppress Auger recombination. We predict that a 4-fold suppression of Auger recombination can be achieved in 10 nm CQDs by increasing the core volume by using rodlike cores embedded in thick shells.

Biexciton Binding of Dirac fermions Confined in Colloidal Graphene Quantum Dots.

We present transient absorption measurements and microscopic theory of biexciton binding in triangular colloidal graphene quantum dots consisting of 168 sp(2)-hybridized C atoms. We observe optical transitions from the lowest orbitally dark singlet exciton states to states below the energy of an unbound dark+bright singlet-exciton pair. Through microscopic calculations of the low-energy exciton and biexciton states via tight-binding, Hartree-Fock, and configuration interaction methods, the spectra reveal a biexciton consisting primarily of a dark-bright singlet-pair bound by ∼0.14 eV.

Majorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire.

We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalization methods, we identify the presence of Majorana zero modes in the nanowire absorption spectra.

Topological Design and Synthesis of High-Spin Aza-triangulenes without Jahn-Teller Distortions.

The atomic doping of open-shell nanographenes enables precise tuning of their electronic and magnetic states, which is crucial for their promising potential applications in optoelectronics and spintronics. Among this intriguing class of molecules, triangulenes stand out with their size-dependent electronic properties and spin states, which can also be influenced by the presence of dopant atoms and functional groups. However, the occurrence of Jahn-Teller distortions in such systems can have a crucial impact on their total spin and requires further theoretical and experimental investigation. In this study, we examine the nitrogen-doped aza-triangulene series via a combination of density functional theory and on-surface synthesis. We identify a general trend in the calculated spin states of aza-[n]triangulenes of various sizes, separating them into two symmetry classes, one of which features molecules that are predicted to undergo Jahn-Teller distortions that reduce their symmetry and thus their total spin. We link this behavior to the location of the central nitrogen atom relative to the two underlying carbon sublattices of the molecules. Consequently, our findings reveal that neutral centrally doped aza-triangulenes have one less radical than their undoped counterparts, irrespective of their predicted symmetry. We follow this by demonstrating the on-surface synthesis of π-extended aza-[5]triangulene, a large member of the higher symmetry class without Jahn-Teller distortions, via a simple one-step annealing process on Cu(111) and Au(111). Using scanning probe microscopy and spectroscopy combined with theoretical calculations, we prove that the molecule is positively charged on the Au(111) substrate, with a high-spin quintet state of S = 2, the same total spin as undoped neutral [5]triangulene. Our study uncovers the correlation between the dopant position and the radical nature of high-spin nanographenes, providing a strategy for the design and development of these nanographenes for various applications.

Physics of lateral triple quantum-dot molecules with controlled electron numbers.

We review the recent progress in theory and experiments with lateral triple quantum dots with controlled electron numbers down to one electron in each dot. The theory covers electronic and spin properties as a function of topology, number of electrons, gate voltage and external magnetic field. The orbital Hund's rules and Nagaoka ferromagnetism, magnetic frustration and chirality, interplay of quantum interference and electron-electron interactions and geometrical phases are described and related to charging and transport spectroscopy. Fabrication techniques and recent experiments are covered, as well as potential applications of triple quantum-dot molecule in coherent control, spin manipulation and quantum computation.

Spin textures in strongly coupled electron spin and magnetic or nuclear spin systems in quantum dots.

Controlling electron spins strongly coupled to magnetic and nuclear spins in solid state systems is an important challenge in the field of spintronics and quantum computation. We show here that electron droplets with no net spin in semiconductor quantum dots strongly coupled with magnetic ion or nuclear spin systems break down at low temperature and form a nontrivial antiferromagnetic spatially ordered spin texture of magnetopolarons. The spatially ordered combined electron-magnetic ion spin texture, associated with spontaneous symmetry breaking in the parity of electronic charge and spin densities and magnetization of magnetic ions, emerges from an ab initio density functional approach to the electronic system coupled with mean-field approximation for the magnetic or nuclear spin system. The predicted phase diagram determines the critical temperature as a function of coupling strength and identifies possible phases of the strongly coupled spin system. The prediction may arrest fluctuations in the spin system and open the way to control, manipulate, and prepare magnetic and nuclear spin ensembles in semiconductor nanostructures.

Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach.

Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS2, representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron-electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe-Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.

Edge States and Strain-Driven Topological Phase Transitions in Quantum Dots in Topological Insulators.

We present here a theory of the electronic properties of quasi two-dimensional quantum dots made of topological insulators. The topological insulator is described by either eight band k→·p→ Hamiltonian or by a four-band k→·p→ Bernevig-Hughes-Zhang (BHZ) Hamiltonian. The trivial versus topological properties of the BHZ Hamiltonian are characterized by the different topologies that arise when mapping the in-plane wavevectors through the BHZ Hamiltonian onto a Bloch sphere. In the topologically nontrivial case, edge states are formed in the disc and square geometries of the quantum dot. We account for the effects of compressive strain in topological insulator quantum dots by means of the Bir-Pikus Hamiltonian. Tuning strain allows topological phase transitions between topological and trivial phases, which results in the vanishing of edge states from the energy gap. This may enable the design of a quantum strain sensor based on strain-driven transitions in HgTe topological insulator square quantum dots.

Uniaxial transition dipole moments in semiconductor quantum rings caused by broken rotational symmetry.

Semiconductor quantum rings are topological structures that support fascinating phenomena such as the Aharonov-Bohm effect and persistent current, which are of high relevance in the research of quantum information devices. The annular shape of quantum rings distinguishes them from other low-dimensional materials, and enables topologically induced properties such as geometry-dependent spin manipulation and emission. While optical transition dipole moments (TDMs) in zero to two-dimensional optical emitters have been well investigated, those in quantum rings remain obscure despite their utmost relevance to the quantum photonic applications of quantum rings. Here, we study the dimensionality and orientation of TDMs in CdSe quantum rings. In contrast to those in other two-dimensional optical emitters, we find that TDMs in CdSe quantum rings show a peculiar in-plane linear distribution. Our theoretical modeling reveals that this uniaxial TDM originates from broken rotational symmetry in the quantum ring geometries.

Macroscopic Singlet-Triplet Qubit in Synthetic Spin-One Chain in Semiconductor Nanowires.

We show here how to create macroscopic quantum states in a semiconductor device: a chain of InAs quantum dots embedded in an InP nanowire. Filling the nanowire with 4 electrons per dot creates a synthetic spin-one chain, with four-fold degenerate topological ground state protected by a Haldane gap. The four states correspond to two spin-½ quasiparticles localised at the ends of the macroscopic wire. The quasiparticle spins are mapped onto a robust, macroscopic, singlet-triplet qubit. These predictions are supported by a microscopic theory and extensive numerical simulations.

Ultrafast Carrier Trapping in Thick-Shell Colloidal Quantum Dots.

It has previously been found that Auger processes can lead to femtosecond carrier trapping in quantum dots, limiting their performance in optoelectronic applications that rely on radiative recombination. Using atomistic simulations, we investigate whether a shell can protect carriers from Auger-assisted trapping. For these studies we investigate CdSe/CdS core-shell quantum dots having total diameters reaching up to 10 nm. We find trapping lifetimes as fast as 1 ps for 2 nm shells, and we report that shells as thick as 6 nm are required to suppress trapping fully. The most efficient recombination mechanism is found to proceed through shallow empty traps, suggesting it can be suppressed by filling the traps through doping or external electrochemical potential. Our findings suggest that to achieve efficient light emission, surface traps have to be completely eliminated, even in thick-shell quantum dots.

Quantum strain sensor with a topological insulator HgTe quantum dot.

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band k · p Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.

Optical signatures of spin polarization of carriers in quantum dots.

We predict theoretically the optical signatures of spin polarization of carriers in self-assembled quantum dots. The emission spectra are mapped out as a function of increasing electron spin polarization for a fixed number of electrons and holes. The spin-polarized spectra are determined using exact diagonalization techniques for up to 12 particles, corresponding to two lowest filled shells. We predict that the spin polarization leads to photon polarization, to redshifts of emission lines due to excess exchange interactions among the spin-polarized electrons, and to a complete breakup of emission lines for spin-polarized electronic shells.

Tailoring magnetism in quantum dots.

We study magnetism in magnetically doped quantum dots as a function of the confining potential, particle numbers, temperature, and strength of the Coulomb interactions. We explore the possibility of tailoring magnetism by controlling the nonparabolicity of the confinement potential and the electron-electron Coulomb interaction, without changing the number of particles. The interplay of strong Coulomb interactions and quantum confinement leads to enhanced inhomogeneous magnetization which persists at higher temperatures than in the noninteracting case. The temperature of the onset of magnetization can be controlled by changing the number of particles as well as by modifying the quantum confinement and the strength of the Coulomb interactions. We predict a series of electronic spin transitions which arise from the competition between the many-body gap and magnetic thermal fluctuations.

Theory of electron mediated Mn-Mn interactions in quantum dots.

We present a theory of interaction of magnetic Mn ions depending strongly on the number (Ne) of electrons in a quantum dot. For closed electronic shells, we derive the RKKY interaction and its dependence on magnetic ion positions, quantum dot energy quantization omega0, and the number of filled shells Ns. For partially filled shells, the many-electron magnetopolaron effect leads to effective carrier mediated ferromagnetic Mn-Mn interactions. The dependence of the magnetopolaron energy on magnetic ion positions, quantum dot energy quantization omega0, and the number of electrons Ne is predicted.

Real space Hartree-Fock configuration interaction method for complex lateral quantum dot molecules.

We present unrestricted Hartree-Fock method coupled with configuration interaction (CI) method (URHF-CI) suitable for the calculation of ground and excited states of large number of electrons localized by complex gate potentials in quasi-two-dimensional quantum dot molecules. The method employs real space finite difference method, incorporating strong magnetic field, for calculating single particle states. The Hartree-Fock method is employed for the calculation of direct and exchange interaction contributions to the ground state energy. The effects of correlations are included in energies and directly in the many-particle wave functions via CI method using a limited set of excitations above the Fermi level. The URHF-CI method and its performance are illustrated on the example of ten electrons confined in a two-dimensional quantum dot molecule.

Quantum Hall ferrimagnetism in lateral quantum dot molecules.

We demonstrate the existence of ferrimagnetic and ferromagnetic phases in a spin phase diagram of coupled lateral quantum dot molecules in the quantum Hall regime. The spin phase diagram is determined from the Hartree-Fock configuration interaction method as a function of electron number N and magnetic field B. The quantum Hall ferrimagnetic phase corresponds to spatially imbalanced spin droplets resulting from strong interdot coupling of identical dots. The quantum Hall ferromagnetic phases correspond to ferromagnetic coupling of spin polarization at filling factors between nu=2 and nu=1.