Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources.

In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement⁻related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.

Escape from an Optoelectronic Tweezer Trap: experimental results and simulations.

Optoelectronic tweezers (OET) are a microsystem actuation technology capable of moving microparticles at mm s-1 velocities with nN forces. In this work, we analyze the behavior of particles manipulated by negative dielectrophoresis (DEP) forces in an OET trap. A user-friendly computer interface was developed to generate a circular rotating light pattern to control the movement of the particles, allowing their force profiles to be conveniently measured. Three-dimensional simulations were carried out to clarify the experimental results, and the DEP forces acting on the particles were simulated by integrating the Maxwell stress tensor. The simulations matched the experimental results and enabled the determination of a new "hopping" mechanism for particle-escape from the trap. As indicated by the simulations, there exists a vertical DEP force at the edge of the light pattern that pushes up particles to a region with a smaller horizontal DEP force. We propose that this phenomenon will be important to consider for the design of OET micromanipulation experiments for a wide range of applications.

Integration of etched facet, electrically pumped, C-band Fabry-Pérot lasers on a silicon photonic integrated circuit by transfer printing.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.

Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform.

The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

The effect of absorption and coherent interference in the photoluminescence and electroluminescence spectra of SRO/SRN MIS capacitors.

In this paper we present a technique that can be used to study the effect of absorption and coherent interference in the luminescence of multilayer structures. We apply the technique to the measured photoluminescence and electroluminescence spectra of MIS capacitors where the insulator is composed of a silicon rich oxide (SRO)/silicon rich nitride (SRN) bilayer structure. We remove the effect of the multilayer stack on the measured photoluminescence spectrum of the samples without the metal contact to find the intrinsic spectrum. Then we apply the effect of the MIS structure on the intrinsic spectrum in order to calculate the electroluminescence spectrum. Good agreement with the experimentally measured EL spectrum is found. We discuss which parameters affect the spectra most significantly.

Manipulating and assembling metallic beads with Optoelectronic Tweezers.

Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 µm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 µm/s, corresponding to 4.2 nano-newton (10(-9) N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.