Nonvortical Rashba Spin Structure on a Surface with C_{1h} Symmetry.

A totally anisotropic peculiar Rashba-Bychkov (RB) splitting of electronic bands was found on the Tl/Si(110)-(1×1) surface with C_{1h} symmetry by angle- and spin-resolved photoelectron spectroscopy and first-principles theoretical calculation. The constant energy contour of the upper branch of the RB split band has a warped elliptical shape centered at a k point located between Γ[over ¯] and the edge of the surface Brillouin zone, i.e., at a point without time-reversal symmetry. The spin-polarization vector of this state is in-plane and points almost the same direction along the whole elliptic contour. This novel nonvortical RB spin structure is confirmed as a general phenomenon originating from the C_{1h} symmetry of the surface.

Peculiar Rashba splitting originating from the two-dimensional symmetry of the surface.

A peculiar Rashba effect is found at a point in the Brillouin zone, where the time-reversal symmetry is broken, though this symmetry was believed to be a necessary condition for Rashba splitting. This finding obtained experimentally by photoemission measurements on a Bi/Si(111)-(sqrt(3) x sqrt(3)) surface is fully confirmed by a first-principles theoretical calculation. We found that the peculiar Rashba effect is simply understood by the two-dimensional symmetry of the surface, and that this effect leads to an unconventional nonvortical Rashba spin structure at a point with time-reversal invariance.

Valley spin polarization by using the extraordinary Rashba effect on silicon.

The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.