Optoelectronic and Optomechanical Properties of Few-Atomic-Layer Black Phosphorus Nanoflakes as Revealed by In Situ TEM.

The optoelectronic signatures of free-standing few-atomic-layer black phosphorus nanoflakes are analyzed by in situ transmission electron microscopy (TEM). As compared to other 2D materials, the band gap of black phosphorus (BP) is related directly to multiple thicknesses and can be tuned by nanoflake thickness and strain. The photocurrent measurements with the TEM show a stable response to infrared light illumination and change of nanoflakes band gap with deformation while pressing them between two electrodes assembled in the microscope. The photocurrent spectra of an 8- and a 6-layer BP nanoflake samples are comparatively measured. Density functional theory (DFT) calculations are performed to identify the band structure changes of BP during deformations. The results should help to find the best pathways for BP smart band gap engineering via tuning the number of material atomic layers and programmed deformations to promote future optoelectronic applications.

Tunable Single-Atomic Charges on a Cleaved Intercalated Transition Metal Dichalcogenide.

Control of a single ionic charge state by altering the number of bound electrons has been considered as an ultimate testbed for atomic charge-induced interactions and manipulations, and such subject has been studied in artificially deposited objects on thin insulating layers. We demonstrate that an entire layer of controllable atomic charges on a periodic lattice can be obtained by cleaving metallic Co1/3NbS2, an intercalated transition metal dichalcogenide. We identified a metastable charge state of Co with a different valence and manipulated atomic charges to form a linear chain of the metastable charge state. Density functional theory investigation reveals that the charge state is stable due to a modified crystal field at the surface despite the coupling between NbS2 and Co via a1g orbitals. The idea can be generalized to other combinations of intercalants and base matrices, suggesting that they can be a new platform to explore single-atom-operational 2D electronics/spintronics.

Novel two-dimensional boron oxynitride predicted using the USPEX evolutionary algorithm.

Oxidation is a unique process that significantly changes the structure and properties of a material. Doping of h-BN by oxygen is a hot topic in material science leading to the possibility of synthesis of novel 2D structures with customized electronic properties. It is still unclear how the atomic structure changes in the presence of external atoms during the oxidation of h-BN. We predict novel two-dimensional (2D) arrangements of boron oxynitride using the evolutionary algorithm of crystal structure prediction USPEX. All considered structures demonstrate semiconducting properties with a reduced bandgap compared with h-BN. Both molecular dynamics and phonon calculations show the dynamical stability of the new 2D B5N3O2 phase, and our calculations demonstrate that it can form a bulk layered structure with an interlayer distance larger than that of pure h-BN. The optical characterization shows a redshift of the absorption spectrum compared with pure h-BN. Incorporation of oxygen into the structure of 2D BN during synthesis or oxidation can dramatically change the covalent network of h-BN while preserving its two-dimensionality and flatness, following the presence of local dipole moments which could improve the piezoelectric properties.

Young's Modulus and Tensile Strength of Ti3C2 MXene Nanosheets As Revealed by In Situ TEM Probing, AFM Nanomechanical Mapping, and Theoretical Calculations.

Two-dimensional transition metal carbides, that is, MXenes and especially Ti3C2, attract attention due to their excellent combination of properties. Ti3C2 nanosheets could be the material of choice for future flexible electronics, energy storage, and electromechanical nanodevices. There has been limited information available on the mechanical properties of Ti3C2, which is essential for their utilization. We have fabricated Ti3C2 nanosheets and studied their mechanical properties using direct in situ tensile tests inside a transmission electron microscope, quantitative nanomechanical mapping, and theoretical calculations employing machine-learning derived potentials. Young's modulus in the direction perpendicular to the Ti3C2 basal plane was found to be 80-100 GPa. The tensile strength of Ti3C2 nanosheets reached up to 670 MPa for ∼40 nm thin nanoflakes, while a strong dependence of tensile strength on nanosheet thickness was demonstrated. Theoretical calculations allowed us to study mechanical characteristics of Ti3C2 as a function of nanosheet geometrical parameters and structural defect concentration.

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots.

A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.

Crystallography-Derived Young's Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy.

Aluminum nitride (AlN) has a unique combination of properties, such as high chemical and thermal stability, nontoxicity, high melting point, large energy band gap, high thermal conductivity, and intensive light emission. This combination makes AlN nanowires (NWs) a prospective material for optoelectronic and field-emission nanodevices. However, there has been very limited information on mechanical properties of AlN NWs that is essential for their reliable utilization in modern technologies. Herein, we thoroughly study mechanical properties of individual AlN NWs using direct,  in situ bending and tensile tests inside a high-resolution TEM. Overall, 22 individual NWs have been tested, and a strong dependence of their Young's moduli and ultimate tensile strengths (UTS) on their growth axis crystallographic orientation is documented. The Young's modulus of NWs grown along the [101̅1] orientation is found to be in a range 160-260 GPa, whereas for those grown along the [0002] orientation it falls within a range 350-440 GPa. In situ TEM tensile tests demonstrate the UTS values up to 8.2 GPa for the [0002]-oriented NWs, which is more than 20 times larger than that of a bulk AlN compound. Such properties make AlN nanowires a highly promising material for the reinforcing applications in metal matrix and other composites. Finally, experimental results were compared and verified under a density functional theory simulation, which shows the pronounced effect of growth axis on the AlN NW mechanical behavior. The modeling reveals that with an increasing NW width the Young's modulus tends to approach the elastic constants of a bulk material.

Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy.

Research on electromechanical properties of semiconducting nanowires, including plastic behavior of Si nanowires and superb carrier mobility of Ge and Ge/Si core-shell nanowires, has attracted increasing attention. However, to date, there have been no direct experimental studies on crystallography dynamics and its relation to electrical and mechanical properties of Ge/Si core-shell nanowires. In this Letter, we in parallel investigated the crystallography changes and electrical and mechanical behaviors of Ge/Si core-shell nanowires under their deformation in a transmission electron microscope (TEM). The core-shell Ge/Si nanowires were bent and strained in tension to high limits. The nanowire Young's moduli were measured to be up to ∼191 GPa, and tensile strength was in a range of 3-8 GPa. Using high-resolution imaging, we confirmed that under large bending strains, Si shells had irregularly changed to the polycrystalline/amorphous state, whereas Ge cores kept single crystal status with the local lattice strains on the compressed side. The nanowires revealed cyclically changed electronic properties and had decent mechanical robustness. Electron diffraction patterns obtained from  in situ TEM, paired with theoretical simulations, implied that nonequilibrium phases of polycrystalline/amorphous Si and ß-Sn Ge appearing during the deformations may explain the regarded mechanical robustness and varying conductivities under straining. Finally, atomistic simulations of Ge/Si nanowires showed the pronounced changes in their electronic structure during bending and the appearance of a conductive channel in compressed regions which might also be responsible for the increased conductivity seen in bent nanowires.

Novel hybrid C/BN two-dimensional heterostructures.

Here we present an investigation of new quasi-two-dimensional heterostructures based on the alternation of bounded carbon and boron nitride layers (C/BN). We carried out a theoretical study of the atomic structure, stability and electronic properties of the proposed heterostructures. Such ultrathin quasi-two-dimensional C/BN films can be synthesized by means of chemically induced phase transition by connection of the layers of multilayered h-BN/graphene van der Waals heterostructures, which is indicated by the negative phase transition pressure in the calculated phase diagrams (P, T) of the films. It was shown that the band gap value of the C/BN films spans the infrared and visible spectrum. We hope that the proposed films and fabrication method can be considered as a possible route to obtain nanostructures with a controllable band gap in wide energy range. This makes these materials potentially suitable for a variety of applications, including photovoltaics, photoelectronics and more.

Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible In Situ High-Resolution TEM.

We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.

Nanostructured BN-Mg composites: features of interface bonding and mechanical properties.

Magnesium (Mg) is one of the lightest industrially used metals. However, wide applications of Mg-based components require a substantial enhancement of their mechanical characteristics. This can be achieved by introducing small particles or fibers into the metal matrix. Using first-principles calculations, we investigate the stability and mechanical properties of a nanocomposite made of magnesium reinforced with boron nitride (BN) nanostructures (BN nanotubes and BN monolayers). We show that boron vacancies at the BN/Mg interface lead to a substantial increase in BN/Mg bonding establishing an efficient route towards the development of BN/Mg composite materials with enhanced mechanical properties.

Hydrogen adsorption study. Formation of quantum dots on graphene nanoribbons within tight-binding approach.

Based on the tight-binding model, we investigate the formation process of quantum dots onto graphene nanoribbons (GNRs) by the sequential adsorption of hydrogen atoms onto the ribbon's surface. We define the difference between hydrogenation processes onto the surface of zigzag (ZGNR) and armchair graphene nanoribbons (AGNR) by calculating the binding energies with respect to the energy of isolated hydrogen atoms for all considered structures.

Photoluminescence of Two-Dimensional MoS2 Nanosheets Produced by Liquid Exfoliation.

Extraordinary properties of two-dimensional materials make them attractive for applications in different fields. One of the prospective niches is optical applications, where such types of materials demonstrate extremely sensitive performance and can be used for labeling. However, the optical properties of liquid-exfoliated 2D materials need to be analyzed. The purpose of this work is to study the absorption and luminescent properties of MoS2 exfoliated in the presence of sodium cholate, which is the most often used surfactant. Ultrasound bath and mixer-assisted exfoliation in water and dimethyl sulfoxide were used. The best quality of MoS2 nanosheets was achieved using shear-assisted liquid-phase exfoliation as a production method and sodium cholate (SC) as a surfactant. The photoluminescent properties of MoS2 nanosheets varied slightly when changing the surfactant concentrations in the range C(SC) = 0.5-2.5 mg/mL. This work is of high practical importance for further enhancement of MoS2 photoluminescent properties via chemical functionalization.

Thermal and Electrical Properties of Additively Manufactured Polymer-Boron Nitride Composite.

The efficiency of electronic microchip-based devices increases with advancements in technology, while their size decreases. This miniaturization leads to significant overheating of various electronic components, such as power transistors, processors, and power diodes, leading to a reduction in their lifespan and reliability. To address this issue, researchers are exploring the use of materials that offer efficient heat dissipation. One promising material is a polymer-boron nitride composite. This paper focuses on 3D printing using digital light processing of a model of a composite radiator with different boron nitride fillings. The measured absolute values of the thermal conductivity of such a composite in the temperature range of 3-300 K strongly depend on the concentration of boron nitride. Filling the photopolymer with boron nitride leads to a change in the behavior of the volt-current curves, which may be associated with the occurrence of percolation currents during the deposition of boron nitride. The ab initio calculations show the behavior and spatial orientation of BN flakes under the influence of an external electric field at the atomic level. These results demonstrate the potential use of photopolymer-based composite materials filled with boron nitride, which are manufactured using additive techniques, in modern electronics.

Moiré Diamones: New Diamond-like Films of Semifunctionalized Twisted Graphene Layers.

We proposed novel carbon nanostructures based on a twisted few-layered graphene with one side passivated by hydrogen or fluorine: Moiré diamones on graphene. The presence of a dangling bond at the bottom layer of diamones leads to the appearance of spin density localization, which can be tuned by the variation of the twist angle with the following formation of Moiré diamones. The spin-polarized nature of electronic density distribution was obtained and discussed in detail on the basis of ab initio calculations. Such a feature makes Moiré diamones a promising key element in the field of controllable spintronic devices.

Computational Design of Gas Sensors Based on V3S4 Monolayer.

Novel magnetic gas sensors are characterized by extremely high efficiency and low energy consumption, therefore, a search for a two-dimensional material suitable for room temperature magnetic gas sensors is a critical task for modern materials scientists. Here, we computationally discovered a novel ultrathin two-dimensional antiferromagnet V3S4, which, in addition to stability and remarkable electronic properties, demonstrates a great potential to be applied in magnetic gas sensing devices. Quantum-mechanical calculations within the DFT + U approach show the antiferromagnetic ground state of V3S4, which exhibits semiconducting electronic properties with a band gap of 0.36 eV. A study of electronic and magnetic response to the adsorption of various gas agents showed pronounced changes in properties with respect to the adsorption of NH3, NO2, O2, and NO molecules on the surface. The calculated energies of adsorption of these molecules were -1.25, -0.91, -0.59, and -0.93 eV, respectively. Obtained results showed the prospective for V3S4 to be used as effective sensing materials to detect NO2 and NO, for their capture, and for catalytic applications in which it is required to lower the dissociation energy of O2, for example, in oxygen reduction reactions. The sensing and reducing of NO2 and NO have great importance for improving environmental protection and sustainable development.

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.

Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration.

Carbon nanotubes have a helical structure wherein the chirality determines whether they are metallic or semiconducting. Using in situ transmission electron microscopy, we applied heating and mechanical strain to alter the local chirality and thereby control the electronic properties of individual single-wall carbon nanotubes. A transition trend toward a larger chiral angle region was observed and explained in terms of orientation-dependent dislocation formation energy. A controlled metal-to-semiconductor transition was realized to create nanotube transistors with a semiconducting nanotube channel covalently bonded between a metallic nanotube source and drain. Additionally, quantum transport at room temperature was demonstrated for the fabricated nanotube transistors with a channel length as short as 2.8 nanometers.

Theoretical study of elastic properties of SiC nanowires of different shapes.

The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular mechanics. Upon surface relaxation, surface reconstruction led to the splitting of the wire geometry, forming both hexagonal (surface) and cubic phases (bulk). The behavior of the pristine SiC wires under compression and stretching was studied and Young's moduli were obtained. For Y-shaped SiC nanowires the effective Young's moduli and behavior in inelastic regime were elucidated.

Induced spin polarization in graphene via interactions with halogen doped MoS2 and MoSe2 monolayers by DFT calculations.

Magnetic halogen doped MoX2 (X = S and Se) monolayers influenced the electronic structure of graphene through a proximity effect. This process was observed using state-of-the-art calculations. It was found that the substitution of a single chalcogen atom with a halogen atom (F, Cl, Br, and I) results in n-type doping of MoX2. An additional electron from the dopant is localized on binding orbitals with the nearest Mo atoms and leads to the formation of magnetism in the dichalcogenide layer. Detailed analysis of halogen doped MoX2/graphene heterostructures demonstrated the induction of spin polarization in graphene near the Fermi energy. Significant spin polarization near the Fermi energy and n-type doping were observed in the graphene layer of MoSe2/graphene heterostructures with MoSe2 doped with iodine. At the same time, fluorine-doped MoSe2 does not cause n-doping in graphene, while spin polarization still takes place. The possibility for the detection of the arrangement of the halogen impurities at the MoX2 basal plane even with the graphene layer deposited on top was demonstrated through STM measurements which will be undoubtedly useful for the fabrication of electronic schemes and elements based on the proposed heterostructures for their further application in nanoelectronics and spintronics.

Mechanical Engineering Effect in Electronic and Optical Properties of Graphene Nanomeshes.

Here, we present an ab initio study of ways for engineering electronic and optical properties of bilayered graphene nanomeshes with various stacking types via mechanical deformations. Strong evolution of the electronic structure and absorption spectra during deformation is studied and analyzed. The obtained results are of significant importance and open up new prospects for using such nanomeshes as materials with easily controlled properties in electronic and optoelectronic nanodevices.