High transmittance and deep RGB primary electrochromic color filter for high light out-coupling electro-optical devices.

We report a transmittance controllable electrochromic color filter (TCECF) by incorporating new electrochromic leuco dyes and their optimized composition. Each primary color red (R), green (G), and blue (B) electrochromic filter has an excellent transmittance of more than 84% at 650 nm, 540 nm, 450 nm, and the color coordinates are controllable from white (0.332, 0.347) to deep-red (0.621, 0.344), deep-green (0.327, 0.646), and deep-blue (0.179, 0.085), respectively. Also, each TCECF has good coloration efficiencies of 188.7 cm2 C-1 (R), 189.3 cm2 C-1 (G), and 147.8 cm2 C-1 (B) with high optical density change. A full color producible electrochromic color filter (ECF) is designed and fabricated by integrating primary RGB color filters with a refractive index matching adhesive layer. The fabricated three-stack full color producible ECF enables high transmittance of about 61% for clear white light extraction, and it can produce various colors including RGB. This TCECF technology will be very useful for high light out-coupling electro-optical applications, such as smart lighting, smart window, and display.

An accurate measurement of the dipole orientation in various organic semiconductor films using photoluminescence exciton decay analysis.

In this study, we report an accurate and more reliable approach to estimate the dipole orientation of emitters especially phosphorescence, fluorescence and even thermally activated delayed fluorescence. The dipole orientation measurements are performed by examining the variation of the photoluminescence (PL) exciton decay rate from time-resolved PL and optical analysis. Our anisotropic dipole orientation results are consistent with those of previous reports. The studied measurement approach is very reliable and accurate to estimate the dipole orientation of any organic semiconductor materials regardless of whether they are doped or neat films.

Next generation smart window display using transparent organic display and light blocking screen.

Transparent organic light emitting diodes (TOLED) have widespread applications in the next-generation display devices particularly in the large size transparent window and interactive displays. Herein, we report high performance and stable attractive smart window displays using facile process. Advanced smart window display is realized by integrating the high performance light blocking screen and highly transparent white OLED panel. The full smart window display reveals a maximum transmittance as high as 64.2% at the wavelength of 600 nm and extremely good along with tunable ambient contrast ratio (171.94:1) compared to that of normal TOLED (4.54:1). Furthermore, the performance decisive light blocking screen has demonstrated an excellent optical and electrical characteristics such as i) high transmittance (85.56% at 562nm) at light-penetrating state, ii) superior absorbance (2.30 at 562nm) in light interrupting mode, iii) high optical contrast (85.50 at 562 nm), iv) high optical stability for more than 25,000 cycle of driving, v) fast switching time of 1.9 sec, and vi) low driving voltage of 1.7 V. The experimental results of smart window display are also validated using optical simulation. The proposed smart window display technology allows us to adjust the intensity of daylight entering the system quickly and conveniently.

Cool white light-emitting three stack OLED structures for AMOLED display applications.

This paper demonstrates 2-stack and 3-stack white organic light-emitting diodes (WOLEDs) with fluorescent blue and phosphorescent yellow emissive units. The 2-stack and 3-stack WOLED comprises blue-yellow and blue-blue-yellow (blue-yellow-blue) combinations. The position of the yellow emitter and possible cavity lengths in different stack architectures are theoretically and experimentally investigated to reach Commission Internationale de L'Eclairage (CIE) coordinates of near (0.333/0.333). Here, a maximum external quantum efficiency (EQE) of 23.6% and current efficiency of 62.2 cd/A at 1000 cd/m2 as well as suitable CIE color coordinates of (0.335/0.313) for the blue-blue-yellow 3-stack hybrid WOLED structure is reported. In addition, the blue-yellow-blue 3-stack architecture exhibits an improved angular dependence compared to the blue-blue-yellow structure at a decreased EQE of 19.1%.

An efficient organic and inorganic hybrid interlayer for high performance inverted red cadmium-free quantum dot light-emitting diodes.

The efficiency and device lifetime of quantum dot light-emitting diode (QLED) devices suffer from the charge imbalance issue resulting from excess electron injection from the ZnO electron transport layer (ETL) to the quantum dot (QD) emissive layer (EML). Herein we report 1,3-bis(9-phenyl-1,10-phenanthrolin-2-yl)benzene (BPPB) small molecule ETL blended ZnO as an interlayer in inverted red indium phosphide (InP) based QLEDs to slow down the ZnO ETL mobility. The device with ZnO : BPPB (15 wt%) shows 16.7% external quantum efficiency and 595 h lifetime (T 50) at 1000 cd m-2. Insertion of a thin hybrid interlayer reduces the electron injection to match the charge balance in the QD layer and also suppresses the interfacial exciton quenching between the ZnO ETL and QD EML.

Recent Advancement in Boron-Based Efficient and Pure Blue Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes.

In the last few years, electron-deficient materials have been actively researched for application in organic light-emitting diode (OLED) as dopant and electron-transporting materials. The boron-containing materials are interesting as they give good emissive properties in solid state with an electron-accepting character. Recently, many boron-containing materials are used as emissive materials for thermally activated delayed fluorescence (TADF) OLED applications. In this review, boron acceptor-based push-pull small molecules used for application in blue TADF OLEDs are reviewed, covering their different types of acceptor, molecular design, structure-property relation, material properties, and device properties. Also, the importance of boron acceptors to address the key issue of blue TADF OLEDs is discussed.

Degradation of OLED performance by exposure to UV irradiation.

Organic light-emitting diode (OLED) displays are highly susceptible to the harsh environmental conditions found outdoors, like exposure to direct sunlight as well as UV radiation and storage temperature, resulting in a loss of luminance and lifespan, pixel shrinkage, and permanent damage and/or malfunction of the panel. Here, we fabricated top emission OLEDs (TEOLEDs) using Yb : LiF (1 : 1, 2 nm)/Ag : Mg (10 : 1, 16 nm) and Mg : LiF (1 : 1, 2 nm)/Ag : Mg (10 : 1, 16 nm) cathode units and the performances of the devices were investigated by subjecting them to UV radiation. A fabricated red TEOLED (control device), employing a standard Mg : LiF (1 : 1, 2 nm) electron injection layer (EIL) and an Ag : Mg (16 nm) cathode, showed a rapid decrease in luminance and a fast increase in driving voltage at 10 mA cm-2 over time after UV irradiation for 300 h. However, a cathode unit comprising a Yb : LiF (1 : 1, 2 nm) EIL and an Ag : Mg (10 : 1, 16 nm) cathode showed no loss of luminance or increase in driving voltage at 10 mA cm-2 over time after UV irradiation for 300 h. Therefore, we investigated the changes occurring in both cathode units due to UV irradiation using the lift-out FIB-TEM technique and EDS mapping. With UV irradiation for 300 h, Ag atoms migrated toward the center of the cathode, Mg atoms migrated toward the CPL, and no Mg atoms were observed in the EIL area. In contrast, we observed (i) no substantial migration of Ag atoms and they were located at the center of the cathode, (ii) no migration of Mg atoms toward the CPL layer, and (iii) no movement of Yb atoms after UV irradiation. Furthermore, the UV irradiated red TEOLED with an Mg : LiF (1 : 1, 2 nm) EIL showed (i) deterioration in electron injection into the emissive layer (EML) and an increase in the EIL/metal interface resistance, and (ii) a remarkable shift of the J-V curve to the higher voltage side, while almost no such changes were observed in the TEOLD with a Yb : LiF (1 : 1, 2 nm) EIL. Also, an almost identical RGB pixel emitting area was noticed in the Yb : LiF (1 : 1, 2 nm) based devices after UV irradiation for 300 h. These results suggest that Yb could become a good candidate for the cathode unit, providing better device stability against harsh environmental conditions as well as excellent electron injection properties.

Efficient Cadmium-Free Inverted Red Quantum Dot Light-Emitting Diodes.

Here, we report an efficient inverted red indium phosphide (InP) comprising QD (InP/ZnSe/ZnS, core/shell structure) light-emitting diode (QLED) by modulating an interfacial contact between the electron transport layer and emissive InP-QDs and applying self-aging approach. The red InP-QLED with optimized interfacial contact exhibits a significant improvement in maximum external quantum efficiency and current efficiency from 4.42 to 10.2% and 4.70 to 10.8 cd/A, respectively, after 69 days of self-aging, which is an almost 2.3-fold improvement compared to the fresh device. The analysis indicates the consecutive reduction in electron injection and accumulation in the emissive QD due to changes in the conduction band minimum of ZnMgO (0.1 eV after 10 days of storage) through a downward vacuum-level shift according to the aging times. During the device aging periods, the oxygen vacancy of ZnMgO reduces, which leads to lower the conductivity of ZnMgO. As a result, charge balance of the device is improved with the suppression of exciton quenching at the interface of ZnMgO and InP-QD.

Highly efficient single-stack hybrid cool white OLED utilizing blue thermally activated delayed fluorescent and yellow phosphorescent emitters.

Highly efficient single-stack hybrid cool white organic light-emitting diodes (OLEDs) having blue-yellow-blue multiple emitting layers (EMLs) are designed and constructed by utilizing blue thermally activated delayed fluorescent (TADF) and yellow phosphorescent emitters. The out-coupling efficiencies of yellow and blue emissions are maximized by tuning the ITO and total device thickness that satisfies both of antinode positions for yellow and blue emissions in a limited multiple EML thickness. To obtain a cool white emission, the exciton formation ratio in the blue-yellow-blue multiple EML system is controlled by manipulating the recombination zone through charge conductivity variation of host medium in the blue TADF EML. The resulting device exhibits cool white emission with very high maximum external quantum efficiency of 23.1% and CIE color coordinates of (0.324, 0.337). We anticipate that the studied approach will raise the viability of single-stack hybrid cool white OLEDs for high performance display applications.

An efficient nano-composite layer for highly transparent organic light emitting diodes.

We report highly transparent and low resistive new cathode structures, which basically consist of nano-composite layer/Ag/WO3 for transparent organic light-emitting diode (TOLED) applications. Our new cathode structure exhibits an extremely high transmittance of 91.2% at 550 nm, a low sheet resistance of 5.4 Ω â–¡(-1), and excellent electron injection properties. Such a high transmittance along with a low resistivity of the fabricated new cathode could be explained by surface-modifying behavior with the generation of a nano-composite thin silver oxide layer during Ag deposition. Chemical interaction at the interface between the electron injection layer and the electron transport layer results in good electron injection properties in TOLEDs. The fabricated TOLEDs with our new cathode structures have a full device transmittance of 85-87% at 550 nm.