A study of the Rashba effect in two-dimensional ternary compounds ABC monolayers (A = Sb, Bi; B = Se, Te; C = Br; I).

The structure and electronic and spintronic properties of two-dimensional (2D) ternary compounds ABC (A = Sb, Bi; B = Se, Te; C = Br; I) monolayers are investigated using the first-principles method. The ABC monolayers possess typical Janus structures with a considerable potential gradient normal to the surface, inducing intrinsic Rashba spin splitting (RSS) at the conduction band minimum near the Γ point. Among them, the splitting strength of the BiSeI monolayer is the largest and its Rashba coefficient can reach 1.84 eV Å. The projected energy band of the BiSeI monolayer suggests that the RSS state is mainly rooted in the Bi-pz orbital. The RSS strength can be modulated by applying the in-plane strain. The tensile strain can improve the RSS strength, which is ascribed to the increase of the potential gradient normal to the surface. These results indicate that these 2D ternary compounds have great potential for application in tunable spintronic devices.

Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y = S, Se, and Te) heterostructures.

The electrical contact and graphene (Gr) doping for Gr/XPtY (X, Y = S, Se, and Te) van der Waals (vdW) heterostructures are studied by using first-principles methods. The intrinsic electronic properties of Gr and PtXY are preserved due to the weak vdW interactions. We find that the types of interfacial electrical contact and Gr doping are closely related to the interface chalcogen atoms. The n-type Ohmic contact is formed in the Gr/SPtY (Y = S, Se, and Te) systems. The n-type and p-type Schottky contacts are realized in the Gr/SePtY and Gr/TePtY systems, respectively. The physical mechanism of different contact types can be analyzed based on the charge transfer between the Gr and XPtY layers. For all the heterostructures, the contact type and Schottky barrier height can be effectively modulated by the external electric field and interlayer coupling. The Gr doping type and charge-carrier concentration are also investigated. The p-doping, p-doping, and n-doping are obtained in Gr for the Gr/SPtY, Gr/SePtY, and Gr/TePtY systems, respectively. The highest carrier concentration of the Gr layer can reach 1.69 × 1013 cm-2 for the Gr/TePtTe system. The results indicate that Gr/XPtY heterostructures are potential candidates for improving the performance of high-efficiency nano electronic devices.

Remarkable Rashba spin splitting induced by an asymmetrical internal electric field in polar III-VI chalcogenides.

Herein, the Rashba spin orbit coupling (SOC) of polar group III-VI chalcogenide XABY (A, B = Ga, In; X ≠ Y = S, Se, Te) monolayers is investigated based on density functional theory. The different electronegativities of X and Y atoms lead to an asymmetrical internal electric field in the XABY monolayer; this implies that the internal electric field between A and X is not equal to that between B and Y. Mirror symmetry breaking in the XABY monolayer induces a remarkable Rashba spin splitting (RSS) at the conduction band minimum (CBM). Moreover, it is demonstrated that an external electric field and an in-plane biaxial strain can affect the internal electric field by varying the charge distribution, and this further manipulates the RSS. Under a positive external electric field and tensile strain, the RSS at the CBM exhibits a near-linear increasing behavior, whereas under a negative external electric field and compressive strain, the RSS displays a monotonous decreasing pattern. In addition, we explored the influence of interlayer coupling and substrate on the RSS. The stacking pattern of bilayer structures has a significant impact on the RSS. The investigation of SInGaSe on the Si(111) substrate suggests that the Rashba band is situated inside the large band gap of the substrate. Overall, our investigations suggest that the polar group III-VI chalcogenides are promising candidates for future spintronic applications.

Au cluster adsorption on perfect and defective MoS2 monolayers: structural and electronic properties.

The adsorption of Aun (n = 1-4) clusters on perfect and defective MoS2 monolayers is studied using density functional theory. For the pristine MoS2 monolayer, our results show that the electrons are transferred from the support to the adsorbed Au clusters, thus a p-doping effect is achieved in the pristine MoS2 monolayer by the Au cluster adsorption, which is in good agreement with the experimental findings. The adsorption of Au clusters can introduce mid-gap states, which modify the electronic and magnetic properties of the systems. The adsorbates containing an odd number of Au atoms can introduce a spin magnetic moment of 1 µB into the perfect MoS2 monolayer, while those systems containing an even number of Au atoms are spin-unpolarized. Two categories of defects, i.e., a single S vacancy and Mo antisite defect with one Mo atom replacing one S atom, are considered for the defective monolayer MoS2. Compared with the pristine MoS2 monolayer, the adsorption energies for Au clusters are significantly increased for the MoS2 monolayer with a single S vacancy, and there are more electrons transferred from the MoS2 monolayer with an S vacancy to the Au clusters. The mid-gap states and odd-even oscillation magnetic behavior can also be observed when Au clusters are adsorbed on the MoS2 monolayer with an S vacancy. For those systems of Au clusters on MoS2 monolayers with Mo antisite defects, the adsorption energies as well as the magnitude and the direction of transferred charge are similar to those for the MoS2 monolayer with an S vacancy. The spin-polarizations appear in all systems with Mo antisite defects. Our investigations suggest that the electronic and magnetic properties of MoS2 nanosheets can be effectively modulated by the adsorption of Au clusters.

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure.

InSe monolayer, belonging to group III-VI chalcogenide family, has shown promising performance in the realm of spintronic. Nevertheless, the out-of-plane mirror symmetry in InSe monolayer constrains the electrons' degrees of freedom, and this will confine its spin-related applications. Herein, we construct Sb/InSe van der Waals heterostructure to extend the electronic and spintronic properties of InSe. The density functional theory is utilized to verify the tunable electronic properties and Rashba spin splitting (RSS) of Sb/InSe heterostructure. According to the obtained results, the Sb/InSe heterostructure can be considered as a direct band gap semiconductor with typical type-II band alignment, where the electrons and holes are localized in the InSe and Sb layers, respectively. The RSS is recognized at conduction band minimum around Γ point in Sb/InSe, which is induced by the spontaneous internal electric field with electric dipole moment of 0.016 e Å from Sb to InSe. The vertical strain, in-plane strain, and external electric field are employed to modulate the strength of RSS. The Rashba coefficient and dipole moment exhibit the similar variation tendency, suggesting the strength of RSS depends on the magnitude of dipole moment. The controllable RSS makes Sb/InSe heterostructure become an appropriate candidate material for spintronic devices.

Electric field control of Rashba spin splitting in 2D NIIIXVI (N = Ga, In; X = S, Se, Te) monolayer.

Spin splitting of the nonmagnetic two dimensional (2D) layered NIIIXVI (N = Ga, In; X = S, Se, Te) monolayer is investigated based on the density functional theory. Due to the mirror symmetry, there is no Rashba spin splitting (RSS) in the freestanding NX plane. It is found that applying the external electric field perpendicular to the NX plane can result in sizable RSS around the Γ point due to the mirror symmetry breaking. The induced RSS is mainly influenced by the anions X and gradually strengthens with the increase of external electric field. The considerable RSS is observed in NTe systems. Moreover, the influence of in-plane biaxial strain on RSS is explored, and the tensile strain can enhance the RSS, especially for those bands around the Fermi level. Our theoretical investigation provides a deep insight in spin splitting behaviors in NX monolayers and agrees well with the experimental report.

Relating Doses of Contrast Agent Administered to TIC and Semi-Quantitative Parameters on DCE-MRI: Based on a Murine Breast Tumor Model.

OBJECTIVE: To explore the changes in the time-signal intensity curve(TIC) type and semi-quantitative parameters of dynamic contrast-enhanced(DCE)imaging in relation to variations in the contrast agent(CA) dosage in the Walker 256 murine breast tumor model, and to determine the appropriate parameters for the evaluation ofneoadjuvantchemotherapy(NAC)response. MATERIALS AND METHODS: Walker 256 breast tumor models were established in 21 rats, which were randomly divided into three groups of7rats each. Routine scanning and DCE-magnetic resonance imaging (MRI) of the rats were performed using a 7T MR scanner. The three groups of rats were administered different dosages of the CA0.2mmol/kg, 0.3mmol/kg, and 0.5mmol/kg, respectively; and the corresponding TICs the semi-quantitative parameters were calculated and compared among the three groups. RESULTS: The TICs were not influenced by the CA dosage and presented a washout pattern in all of the tumors evaluated and weren't influenced by the CA dose. The values of the initial enhancement percentage(Efirst), initial enhancement velocity(Vfirst), maximum signal(Smax), maximum enhancement percentage(Emax), washout percentage(Ewash), and signal enhancement ratio(SER) showed statistically significant differences among the three groups (F = 16.952, p = 0.001; F = 69.483, p<0.001; F = 54.838, p<0.001; F = 12.510, p = 0.003; F = 5.248, p = 0.031; F = 9.733, p = 0.006, respectively). However, the values of the time to peak(Tpeak), maximum enhancement velocity(Vmax), and washout velocity(Vwash)did not differ significantly among the three dosage groups (F = 0.065, p = 0.937; F = 1.505, p = 0.273; χ2 = 1.423, p = 0.319, respectively); the washout slope(Slopewash), too, was uninfluenced by the dosage(F = 1.654, p = 0.244). CONCLUSION: The CA dosage didn't affect the TIC type, Tpeak, Vmax, Vwash or Slopewash. These dose-independent parameters as well as the TIC type might be more useful for monitoring the NAC response because they allow the comparisons of the DCE data obtained using different CA dosages.

Molecular structure, vibrational spectra, NBO analysis and molecular packing prediction of 3-nitroacetanilide by ab initio HF and density functional theory.

Quantum chemical calculations of geometries and vibrational wavenumbers of 3-nitroacetanilide (C8H8N2O3) in the ground state were carried out by using ab initio HF and density functional theory (DFT/B3LYP) methods with 6-31+G(*) basis set. The -311++G(**) basis set is also used for B3LYP level. The scaled harmonic vibrational frequencies have been compared with experimental FT-IR spectra. Theoretical vibrational spectra of the title compound were interpreted by means of potential energies distributions (PEDs) using MOLVIB program. The theoretical spectrograms for IR spectra of the title compound have been constructed. The shortening of C-H bond length and the elongation of N-H bond length suggest the existence of weak C-H⋯O and N-H⋯O hydrogen bonds, which is confirmed by the natural bond orbital analysis. In addition, the crystal structure obtained by molecular mechanics belongs to the P2(1) space group, with lattice parameters Z=4, a=14.9989 Å, b=4.0367 Å, c=12.9913 Å, ρ=0.998 g cm(-3).