RESUMO
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V-shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities, especially in the HF domain. This study presents new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors.
RESUMO
A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS2 field-effect biosensor for streptavidin detection showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors.