Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal.

Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 µm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.

Quantum Transport of Dirac Fermions in HgTe Gapless Quantum Wells.

We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesoscopic) samples. In micron-sized samples, we observe a magnetic-field-induced quantized resistance (~h/2e) at Landau filling factor ν=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge ν=0 state and bulk ν≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.

Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness.

Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.

Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures.

In quantum wells (QWs) formed in HgCdTe/CdHgTe heterosystems with a variable composition of Cd(Hg), Shubnikov-de-Haas (SdH) oscillations are investigated to characterize the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure. Several methods of extracting the Rashba spin-splitting at zero magnetic field and their magnetic field dependences from the beatings of SdH oscillations are used for greater reliability. The large and similar Rashba splitting (25-27 meV) is found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H1 subband for the sample with an inverted one.

Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature.

Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7-3 µm). In this work, we report on the observation of stimulated emission (SE) in the 2.65-2.75 µm wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3-5 µm atmospheric window and to lower the SE threshold.

Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator.

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron-3D hole scattering.

Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers.

HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with the energy spectrum close to the graphene-like relativistic dispersion that is supposed to suppress the non-radiative Auger recombination. We combine various methods such as photoconductivity, photoluminescence and magneto-optical measurements as well as transmission electron microscopy to retrofit growth parameters in multi-QW waveguide structures, designed for long wavelengths lasing in the range of 10-22 µm. The results reveal that the attainable operating temperatures and wavelengths are strongly dependent on Cd content in the QW, since it alters the dominating recombination mechanism of the carriers.

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg1-x Cd x Te.

Terahertz photoconductivity in heterostructures based on n-type Hg1-x Cd x Te epitaxial films both in the topological phase (x < 0.16, inverted band structure, zero band gap) and the trivial state (x > 0.16, normal band structure) has been studied. We show that both the positive photoresponse in films with x < 0.16 and the negative photoconductivity in samples with x > 0.16 have no low-energy threshold. The observed non-threshold positive photoconductivity is discussed in terms of a qualitative model that takes into account a 3D potential well and 2D topological Dirac states coexisting in a smooth topological heterojunction.