Carrier-resolved photo-Hall effect.

The fundamental parameters of majority and minority charge carriers-including their type, density and mobility-govern the performance of semiconductor devices yet can be difficult to measure. Although the Hall measurement technique is currently the standard for extracting the properties of majority carriers, those of minority carriers have typically only been accessible through the application of separate techniques. Here we demonstrate an extension to the classic Hall measurement-a carrier-resolved photo-Hall technique-that enables us to simultaneously obtain the mobility and concentration of both majority and minority carriers, as well as the recombination lifetime, diffusion length and recombination coefficient. This is enabled by advances in a.c.-field Hall measurement using a rotating parallel dipole line system and an equation, ΔµH = d(σ2H)/dσ, which relates the hole-electron Hall mobility difference (ΔµH), the conductivity (σ) and the Hall coefficient (H). We apply this technique to various solar absorbers-including high-performance lead-iodide-based perovskites-and demonstrate simultaneous access to majority and minority carrier parameters and map the results against varying light intensities. This information, which is buried within the photo-Hall measurement1,2, had remained inaccessible since the original discovery of the Hall effect in 18793. The simultaneous measurement of majority and minority carriers should have broad applications, including in photovoltaics and other optoelectronic devices.

Study of Glass Formation and Crystallization Kinetics in a 2D Metal Halide Perovskite Using Ultrafast Calorimetry.

While crystalline 2D metal halide perovskites (MHPs) represent a well-celebrated semiconductor class, supporting applications in the fields of photovoltaics, emitters, and sensors, the recent discovery of glass formation in an MHP opens many new opportunities associated with reversible glass-crystalline switching, with each state offering distinct optoelectronic properties. However, the previously reported [S-(-)-1-(1-naphthyl)ethylammonium]2PbBr4 perovskite is a strong glass former with sluggish glass-crystal transformation time scales, pointing to a need for glassy MHPs with a broader range of compositions and crystallization kinetics. Herein we report glass formation for low-melting-temperature 1-MeHa2PbI4 (1-MeHa = 1-methyl-hexylammonium) using ultrafast calorimetry, thereby extending the range of MHP glass formation across a broader range of organic (fused ring to branched aliphatic) and halide (bromide to iodide) compositions. The importance of a slight loss of organic and hydrogen iodide components from the MHP in stabilizing the glassy state is elucidated. Furthermore, the underlying kinetics of glass-crystal transformation, including activation energies, crystal growth rate, Angell plot, and fragility index, is studied using a combination of kinetic, thermodynamic, and rheological modeling techniques. An inferred fast crystal growth rate of 0.21 m/s for 1-MeHa2PbI4 shows promise toward suitability in extended application spaces, for example, in metamaterials, nonvolatile memory, and optical and neuromorphic computing devices.

Chiral Cation Doping for Modulating Structural Symmetry of 2D Perovskites.

Cation mixing in two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) structures represents an important degree of freedom for modifying organic templating effects and tailoring inorganic structures. However, the limited number of known cation-mixed 2D HOIP systems generally employ a 1:1 cation ratio for stabilizing the 2D perovskite structure. Here, we demonstrate a chiral-chiral mixed-cation system wherein a controlled small amount (<10%) of chiral cation S-2-MeBA (S-2-MeBA = (S)-(-)-2-methylbutylammonium) can be doped into (S-BrMBA)2PbI4 (S-BrMBA = (S)-(-)-4-bromo-α-methylbenzylammonium), modulating the structural symmetry from a higher symmetry (C2) to the lowest symmetry state (P1). This structural change occurs when the concentration of S-2-MeBA, measured by solution nuclear magnetic resonance, exceeds a critical level─specifically, for 1.4 ± 0.6%, the structure remains as C2, whereas 3.9 ± 1.4% substitution induces the structure change to P1 (this structure is stable to ∼7% substitution). Atomic occupancy analysis suggests that one specific S-BrMBA cation site is preferentially substituted by S-2-MeBA in the unit cell. Density functional theory calculations indicate that the spin splitting along different k-paths can be modulated by cation doping. A true circular dichroism band at the exciton energy of the 3.9% doping phase shows polarity inversion and a ∼45 meV blue shift of the Cotton-effect-type line-shape relative to (S-BrMBA)2PbI4. A trend toward suppressed melting temperature with higher doping concentration is also noted. The chiral cation doping system and the associated doping-concentration-induced structural transition provide a material design strategy for modulating and enhancing those emergent properties that are sensitive to different types of symmetry breaking.

Meltable Hybrid Antimony and Bismuth Iodide One-Dimensional Perovskites.

Hybrid lead-halide perovskites have been studied extensively for their promising optoelectronic properties and prospective applications, including photovoltaics, solid-state lighting, and radiation detection. Research into these materials has also been aided by the simple and low-temperature synthetic conditions involved in solution-state deposition/crystallization or melt-processing techniques. However, concern over lead toxicity has plagued the field since its infancy. One of the most promising routes to mitigating toxicity in hybrid perovskite materials is substituting isoelectronic Bi(III) for Pb(II). Various methods have been developed to allow pnictide-based systems to capture properties of the Pb(II) analogues, but the ability to melt extended hybrid pnictide-halide materials has not been investigated. In this work, we prepare a series of one-dimensional antimony- and bismuth-iodide hybrid materials employing tetramethylpiperazinium (TMPZ)-related cations. We observe, for the first time, the ability to melt extended hybrid pnictide-halide materials for both the Sb(III) and Bi(III) systems. Additionally, we find that Sb(III) analogues melt at lower temperatures and attribute this observation to structural changes induced by the increased stereochemical activity of the Sb(III) lone pair coupled with the reduction in effective dimensionality due to steric interactions with the organic cations. Finally, we demonstrate the ability to melt process phase pure thin films of (S-MeTMPZ)SbI5.

Electronic structure and photophysics of a supermolecular iron complex having a long MLCT-state lifetime and panchromatic absorption.

Exploiting earth-abundant iron-based metal complexes as high-performance photosensitizers demands long-lived electronically excited metal-to-ligand charge-transfer (MLCT) states, but these species suffer typically from femtosecond timescale charge-transfer (CT)-state quenching by low-lying nonreactive metal-centered (MC) states. Here, we engineer supermolecular Fe(II) chromophores based on the bis(tridentate-ligand)metal(II)-ethyne-(porphinato)zinc(II) conjugated framework, previously shown to give rise to highly delocalized low-lying 3MLCT states for other Group VIII metal (Ru, Os) complexes. Electronic spectral, potentiometric, and ultrafast pump-probe transient dynamical data demonstrate that a combination of a strong σ-donating tridentate ligand and a (porphinato)zinc(II) moiety with low-lying π*-energy levels, sufficiently destabilize MC states and stabilize supermolecular MLCT states to realize Fe(II) complexes that express 3MLCT state photophysics reminiscent of their heavy-metal analogs. The resulting Fe(II) chromophore archetype, FeNHCPZn, features a highly polarized CT state having a profoundly extended 3MLCT lifetime (160 ps), 3MLCT phosphorescence, and ambient environment stability. Density functional and domain-based local pair natural orbital coupled cluster [DLPNO-CCSD(T)] theory reveal triplet-state wavefunction spatial distributions consistent with electronic spectroscopic and excited-state dynamical data, further underscoring the dramatic Fe metal-to-extended ligand CT character of electronically excited FeNHCPZn. This design further prompts intense panchromatic absorptivity via redistributing high-energy absorptive oscillator strength throughout the visible spectral domain, while maintaining a substantial excited-state oxidation potential for wide-ranging photochemistry--highlighted by the ability of FeNHCPZn to photoinject charges into a SnO2/FTO electrode in a dye-sensitized solar cell (DSSC) architecture. Concepts enumerated herein afford opportunities for replacing traditional rare-metal-based emitters for solar-energy conversion and photoluminescence applications.

Kinetically Controlled Structural Transitions in Layered Halide-Based Perovskites: An Approach to Modulate Spin Splitting.

Two-dimensional hybrid organic-inorganic perovskite (HOIP) semiconductors with pronounced spin splitting, mediated by strong spin-orbit coupling and inversion symmetry breaking, offer the potential for spin manipulation in future spintronic applications. However, HOIPs exhibiting significant conduction/valence band splitting are still relatively rare, given the generally observed preference for (near)centrosymmetric inorganic (especially lead-iodide-based) sublattices, and few approaches are available to control this symmetry breaking within a given HOIP. Here, we demonstrate, using (S-2-MeBA)2PbI4 (S-2-MeBA = (S)-(-)-2-methylbutylammonium) as an example, that a temperature-induced structural transition (at ∼180 K) serves to change the degree of chirality transfer to and inversion symmetry breaking within the inorganic layer, thereby enabling modulation of HOIP structural and electronic properties. The cooling rate is shown to dictate whether the structural transition occurs─i.e., slow cooling induces the transition while rapid quenching inhibits it. Ultrafast calorimetry indicates a minute-scale structural relaxation time at the transition temperature, while quenching to lower temperatures allows for effectively locking in the metastable room-temperature phase, thus enabling kinetic control over switching between distinct states with different degrees of structural distortions within the inorganic layers at these temperatures. Density functional theory further highlights that the low-temperature phase of (S-2-MeBA)2PbI4 shows more significant spin splitting relative to the room-temperature phase. Our work opens a new pathway to use kinetic control of crystal-to-crystal transitions and thermal cycling to modulate spin splitting in HOIPs for future spintronic applications, and further points to using such "sluggish" phase transitions for switching and control over other physical phenomena, particularly those relying on structural distortions and lattice symmetry.

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells.

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se)2, which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices-e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu2BaSnS4-related family. Overall, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

Cubic Crystal Structure Formation and Optical Properties within the Ag-BII-MIV-X (BII = Sr, Pb; MIV = Si, Ge, Sn; X = S, Se) Family of Semiconductors.

Quaternary chalcogenide semiconductors are promising materials for energy conversion and nonlinear optical applications, with properties tunable primarily by varying the elemental composition and crystal structure. Here, we first analyze the connections among several cubic crystal structure types, as well as the orthorhombic Ag2PbGeS4-type structure, reported for select members within the Ag-BII-MIV-X (BII = Sr, Pb; MIV = Si, Ge, Sn; X = S, Se) compositional space. Focusing on the Ag-Pb-Si-S and Ag-Sr-Sn-S systems, we show that one structure type, with the formulas Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, is favored. We have prepared powder and single-crystal samples of Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, showing that each takes on the noncentrosymmetric cubic space group I4̅3d and is isostructural to the previously reported compound Ag2Sr3Ge2Se8. Through hybrid density functional theory calculations, these cubic compounds are demonstrated to be (quasi-)direct band gap semiconductors with high densities of states at the band maxima. The band-gap energies are measured by reflectance spectroscopy as 1.95(3) and 2.66(4) eV for Ag2Pb3Si2S8 and Ag2Sr3Sn2S8, respectively. We further measure the optical properties and show the electronic band structures of three other isostructural AI-BII-MIV-X-type materials, i.e., Ag2Sr3Si2S8, Ag2Sr3Ge2S8, and Ag2Sr3Ge2Se8, showing that the band gaps can be predictably tuned by element substitution. Detailed visual analyses of the different structures and of their relationships with other members of the Ag-BII-MIV-X compositional family provide a basis for a broader understanding of the structure formation and optoelectronic properties within the quaternary chalcogenide semiconductor family.

Remarkably Weak Anisotropy in Thermal Conductivity of Two-Dimensional Hybrid Perovskite Butylammonium Lead Iodide Crystals.

Two-dimensional (2D) hybrid organic-inorganic perovskites consisting of alternating organic and inorganic layers are a new class of layered structures. They have attracted increasing interest for photovoltaic, optoelectronic, and thermoelectric applications, where knowing their thermal transport properties is critical. We carry out both experimental and computational studies on thermal transport properties of 2D butylammonium lead iodide crystals and find their thermal conductivity is ultralow (below 0.3 W m-1 K-1) with very weak anisotropy (around 1.5) among layered crystals. Further analysis reveals that the unique structure with the preferential alignment of organic chains and complicated energy landscape leads to moderately smaller phonon lifetimes in the out-of-plane direction and comparable phonon group velocities in in-plane and out-of-plane directions. These new findings may guide the future design of novel hybrid materials with desired thermal conductivity for various applications.

Alkyl-Aryl Cation Mixing in Chiral 2D Perovskites.

We report 2D hybrid perovskites comprising a blend of chiral arylammonium and achiral alkylammonium spacer cations (1:1 mole ratio). These new perovskites feature an unprecedented combination of chirality and alkyl-aryl functionality alongside noncovalent intermolecular interactions (e.g., CH···π interactions), determined by their crystal structures. The mixed-cation perovskites exhibit a circular dichroism that is markedly different from the purely chiral cation analogues, offering new avenues to tune the chiroptical properties of known chiral perovskites, instead of solely relying on otherwise complex chemical syntheses of new useable chiral cations. Further, the ability to dilute the density of chiral cations by mixing with achiral cations may offer a potential way to tailor the spin-based properties in 2D hybrid perovskites, such as Rashba-Dresselhaus spin splitting and chirality-induced spin selectivity and magnetization effects.

Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag2SrSiS4 and Ag2SrGeS4.

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on I2-II-IV-X4 (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of antisite defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag2SrSiS4 and Ag2SrGeS4, each found to form in the tetragonal I4̅2m structure of Ag2BaGeS4. During the synthesis targeting the title compounds, two additional materials, Ag2Sr3Si2S8 and Ag2Sr3Ge2S8, have also been identified. These cubic compounds represent impurity phases during the synthesis of Ag2SrSiS4 and Ag2SrGeS4. We show through hybrid density functional theory calculations that Ag2SrSiS4 and Ag2SrGeS4 have highly dispersive band-edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag2SrSiS4 and Ag2SrGeS4 powders show frequency-doubling capabilities in the near-infrared range.

Synthetic Approaches for Halide Perovskite Thin Films.

Halide perovskites are an intriguing class of materials that have recently attracted considerable attention for use as the active layer in thin film optoelectronic devices, including thin-film transistors, light-emitting devices, and solar cells. The "soft" nature of these materials, as characterized by their low formation energy and Young's modulus, and high thermal expansion coefficients, not only enables thin films to be fabricated via low-temperature deposition methods but also presents rich opportunities for manipulating film formation. This comprehensive review explores how the unique chemistry of these materials can be exploited to tailor film growth processes and highlights the connections between processing methods and the resulting film characteristics. The discussion focuses principally on methylammonium lead iodide (CH3NH3PbI3 or MAPbI3), which serves as a useful and well-studied model system for examining the unique attributes of halide perovskites, but various other important members of this family are also considered. The resulting film properties are discussed in the context of the characteristics necessary for achieving high-performance optoelectronic devices and accurate measurement of physical properties.

Highly Distorted Chiral Two-Dimensional Tin Iodide Perovskites for Spin Polarized Charge Transport.

Incorporating chiral organic molecules into organic/inorganic hybrid 2D metal-halide perovskites results in a novel family of chiral hybrid semiconductors with unique spin-dependent properties. The embedded chiral organic moieties induce a chiroptical response from the inorganic metal-halide sublattice. However, the structural interplay between the chiral organic molecules and the inorganic sublattice, as well as their synergic effect on the resulting electronic band structure need to be explored in a broader material scope. Here we present three new layered tin iodide perovskites templated by chiral (R/S-)methylbenzylammonium (R/S-MBA), i.e., (R-/S-MBA)2SnI4, and their racemic phase (rac-MBA)2SnI4. These MBA2SnI4 compounds exhibit the largest level of octahedral bond distortion compared to any other reported layered tin iodide perovskite. The incorporation of chiral MBA cations leads to circularly polarized absorption from the inorganic Sn-I sublattice, displaying chiroptical activity in the 300-500 nm wavelength range. The bandgap and chiroptical activity are modulated by alloying Sn with Pb, in the series of (MBA)2Pb1-xSnxI4. Finally, we show that vertical charge transport through oriented (R-/S-MBA)2SnI4 thin films is highly spin-dependent, arising from a chiral-induced spin selectivity (CISS) effect. We demonstrate a spin-polarization in the current-voltage characteristics as high as 94%. Our work shows the tremendous potential of these chiral hybrid semiconductors for controlling both spin and charge degrees of freedom.

Direct-Bandgap 2D Silver-Bismuth Iodide Double Perovskite: The Structure-Directing Influence of an Oligothiophene Spacer Cation.

Three-dimensional (3D) hybrid organic-inorganic lead halide perovskites (HOIPs) feature remarkable optoelectronic properties for solar energy conversion but suffer from long-standing issues of environmental stability and lead toxicity. Associated two-dimensional (2D) analogues are garnering increasing interest due to superior chemical stability, structural diversity, and broader property tunability. Toward lead-free 2D HOIPs, double perovskites (DPs) with mixed-valent dual metals are attractive. Translation of mixed-metal DPs to iodides, with their prospectively lower bandgaps, represents an important target for semiconducting halide perovskites, but has so far proven inaccessible using traditional spacer cations due to either intrinsic instability or formation of competing non-perovskite phases. Here, we demonstrate the first example of a 2D Ag-Bi iodide DP with a direct bandgap of 2.00(2) eV, templated by a layer of bifunctionalized oligothiophene cations, i.e., (bis-aminoethyl)bithiophene, through a collective influence of aromatic interactions, hydrogen bonding, bidentate tethering, and structural rigidity. Hybrid density functional theory calculations for the new material reveal a direct bandgap, consistent with the experimental value, and relatively flat band edges derived principally from Ag-d/I-p (valence band) and Bi-p/I-p (conduction band) states. This work opens up new avenues for exploring specifically designed organic cations to stabilize otherwise inaccessible 2D HOIPs with potential applications for optoelectronics.

Tunable Semiconductors: Control over Carrier States and Excitations in Layered Hybrid Organic-Inorganic Perovskites.

For a class of 2D hybrid organic-inorganic perovskite semiconductors based on π-conjugated organic cations, we predict quantitatively how varying the organic and inorganic component allows control over the nature, energy, and localization of carrier states in a quantum-well-like fashion. Our first-principles predictions, based on large-scale hybrid density-functional theory with spin-orbit coupling, show that the interface between the organic and inorganic parts within a single hybrid can be modulated systematically, enabling us to select between different type-I and type-II energy level alignments. Energy levels, recombination properties, and transport behavior of electrons and holes thus become tunable by choosing specific organic functionalizations and juxtaposing them with suitable inorganic components.

Organic-Inorganic Perovskites: Structural Versatility for Functional Materials Design.

Although known since the late 19th century, organic-inorganic perovskites have recently received extraordinary research community attention because of their unique physical properties, which make them promising candidates for application in photovoltaic (PV) and related optoelectronic devices. This review will explore beyond the current focus on three-dimensional (3-D) lead(II) halide perovskites, to highlight the great chemical flexibility and outstanding potential of the broader class of 3-D and lower dimensional organic-based perovskite family for electronic, optical, and energy-based applications as well as fundamental research. The concept of a multifunctional organic-inorganic hybrid, in which the organic and inorganic structural components provide intentional, unique, and hopefully synergistic features to the compound, represents an important contemporary target.

Materials interface engineering for solution-processed photovoltaics.

Advances in solar photovoltaics are urgently needed to increase the performance and reduce the cost of harvesting solar power. Solution-processed photovoltaics are cost-effective to manufacture and offer the potential for physical flexibility. Rapid progress in their development has increased their solar-power conversion efficiencies. The nanometre (electron) and micrometre (photon) scale interfaces between the crystalline domains that make up solution-processed solar cells are crucial for efficient charge transport. These interfaces include large surface area junctions between photoelectron donors and acceptors, the intralayer grain boundaries within the absorber, and the interfaces between photoactive layers and the top and bottom contacts. Controlling the collection and minimizing the trapping of charge carriers at these boundaries is crucial to efficiency.

Intrinsic Instability of Cs2In(I)M(III)X6 (M = Bi, Sb; X = Halogen) Double Perovskites: A Combined Density Functional Theory and Experimental Study.

Recently, there has been substantial interest in developing double-B-cation halide perovskites, which hold the potential to overcome the toxicity and instability issues inherent within emerging lead halide-based solar absorber materials. Among all double perovskites investigated, In(I)-based Cs2InBiCl6 and Cs2InSbCl6 have been proposed as promising thin-film photovoltaic absorber candidates, with computational examination predicting suitable materials properties, including direct bandgap and small effective masses for both electrons and holes. In this study, we report the intrinsic instability of Cs2In(I)M(III)X6 (M = Bi, Sb; X = halogen) double perovskites by a combination of density functional theory and experimental study. Our results suggest that the In(I)-based double perovskites are unstable against oxidation into In(III)-based compounds. Further, the results show the need to consider reduction-oxidation (redox) chemistry when predicting stability of new prospective electronic materials, especially when less common oxidation states are involved.