Intrinsic glassy-metallic transport in an amorphous coordination polymer.

Conducting organic materials, such as doped organic polymers1, molecular conductors2,3 and emerging coordination polymers4, underpin technologies ranging from displays to flexible electronics5. Realizing high electrical conductivity in traditionally insulating organic materials necessitates tuning their electronic structure through chemical doping6. Furthermore, even organic materials that are intrinsically conductive, such as single-component molecular conductors7,8, require crystallinity for metallic behaviour. However, conducting polymers are often amorphous to aid durability and processability9. Using molecular design to produce high conductivity in undoped amorphous materials would enable tunable and robust conductivity in many applications10, but there are no intrinsically conducting organic materials that maintain high conductivity when disordered. Here we report an amorphous coordination polymer, Ni tetrathiafulvalene tetrathiolate, which displays markedly high electronic conductivity (up to 1,200 S cm-1) and intrinsic glassy-metallic behaviour. Theory shows that these properties are enabled by molecular overlap that is robust to structural perturbations. This unusual set of features results in high conductivity that is stable to humid air for weeks, pH 0-14 and temperatures up to 140 °C. These findings demonstrate that molecular design can enable metallic conductivity even in heavily disordered materials, raising fundamental questions about how metallic transport can exist without periodic structure and indicating exciting new applications for these materials.

Extremely anisotropic van der Waals thermal conductors.

The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials1-3. Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis4,5. However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS2, one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS2 (57 ± 3 mW m-1 K-1) and WS2 (41 ± 3 mW m-1 K-1) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems.

3D-Continuous Nanoporous Covalent Framework Membrane Nanoreactors with Quantitatively Loaded Ultrafine Pd Nanocatalysts.

The confinement effect of catalytic nanoreactors containing metal catalysts within nanometer-sized volumes has attracted significant attention for their potential to enhance reaction rate and selectivity. Nevertheless, unregulated catalyst loading, aggregation, leaching, and limited reusability remain obstacles to achieving an efficient nanoreactor. A robust and durable catalytic membrane nanoreactor prepared by incorporating palladium nanocatalysts within a 3D-continuous nanoporous covalent framework membrane is presented. The reduction of palladium precursor occurs on the pore surface within 3D nanochannels, producing ultrafine palladium nanoparticles (Pd NPs) with their number density adjustable by varying metal precursor concentrations. The precise catalyst loading enables controlling the catalytic activity of the reactor while preventing excess metal usage. The facile preparation of Pd NP-loaded free-standing membrane materials allows hydrodechlorination in both batch and continuous flow modes. In batch mode, the catalytic activity is proportional to the loaded Pd amount and membrane area, while the membrane retains its activity upon repeated use. In continuous mode, the conversion remains above 95% for over 100 h, with the reactant solution passing through a single 50 µm-thick Pd-loaded membrane. The efficient nanoporous film-type catalytic nanoreactor may find applications in catalytic reactions for small chemical devices as well as in conventional chemistry and processes.

Electron ptychography of 2D materials to deep sub-ångström resolution.

Aberration-corrected optics have made electron microscopy at atomic resolution a widespread and often essential tool for characterizing nanoscale structures. Image resolution has traditionally been improved by increasing the numerical aperture of the lens (α) and the beam energy, with the state-of-the-art at 300 kiloelectronvolts just entering the deep sub-ångström (that is, less than 0.5 ångström) regime. Two-dimensional (2D) materials are imaged at lower beam energies to avoid displacement damage from large momenta transfers, limiting spatial resolution to about 1 ångström. Here, by combining an electron microscope pixel-array detector with the dynamic range necessary to record the complete distribution of transmitted electrons and full-field ptychography to recover phase information from the full phase space, we increase the spatial resolution well beyond the traditional numerical-aperture-limited resolution. At a beam energy of 80 kiloelectronvolts, our ptychographic reconstruction improves the image contrast of single-atom defects in MoS2 substantially, reaching an information limit close to 5α, which corresponds to an Abbe diffraction-limited resolution of 0.39 ångström, at the electron dose and imaging conditions for which conventional imaging methods reach only 0.98 ångström.

Giant Gateable Osmotic Power Generation from a Goldilocks Two-Dimensional Polymer.

Generating electricity from a salinity gradient, known as osmotic power, provides a sustainable energy source, but it requires precise nanoscale control of membranes for maximum performance. Here, we report an ultrathin membrane, where molecule-specific short-range interactions enable giant gateable osmotic power with a record high power density (2 kW/m2 for 1 M∥1 mM KCl). Our membranes are charge-neutral two-dimensional polymers synthesized from molecular building blocks and operate in a Goldilocks regime that simultaneously maintains high ionic conductivity and permselectivity. Molecular dynamics simulations quantitatively confirm that the functionalized nanopores are small enough for high selectivity through short-range ion-membrane interactions and large enough for fast cross-membrane transport. The short-range mechanism further enables reversible gateable operation, as demonstrated by polarity switching of osmotic power with additional gating ions.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides.

Photolithography and electron-beam lithography are the most common methods for making nanoscale devices from semiconductors. While these methods are robust for bulk materials, they disturb the electrical properties of two-dimensional (2D) materials, which are highly sensitive to chemicals used during lithography processes. Here, we report a resist-free lithography method, based on direct laser patterning and resist-free electrode transfer, which avoids unintentional modification to the 2D materials throughout the process. We successfully fabricate large arrays of field-effect transistors using MoS2 and WSe2 monolayers, the performance of which reflects the properties of the pristine materials. Furthermore, using these pristine devices as a reference, we reveal that among the various stages of a conventional lithography process, exposure to a solvent like acetone changes the electrical conductivity of MoS2 the most. This new approach will enable a rational design of reproducible processes for making large-scale integrated circuits based on 2D materials and other surface-sensitive materials.

Two-Dimensional Mechanics of Atomically Thin Solids on Water.

Movement of a three-dimensional solid at an air-water interface is strongly influenced by the extrinsic interactions between the solid and the water. The finite thickness and volume of a moving solid causes capillary interactions and water-induced drag. In this Letter, we report the fabrication and dynamical imaging of freely floating MoS2 solids on water, which minimizes such extrinsic effects. For this, we delaminate a synthesized wafer-scale monolayer MoS2 onto a water surface, which shows negligible height difference across water and MoS2. Subsequently patterning by a laser generates arbitrarily shaped MoS2 with negligible in-plane strain. We introduce photoswitchable surfactants to exert a lateral force to floating MoS2 with a spatiotemporal control. Using this platform, we demonstrate a variety of two-dimensional mechanical systems that show reversible shape changes. Our experiment provides a versatile approach for designing and controlling a large array of atomically thin solids on water for intrinsically two-dimensional dynamics and mechanics.

Direct Heat-Induced Patterning of Inorganic Nanomaterials.

Patterning functional inorganic nanomaterials is an important process for advanced manufacturing of quantum dot (QD) electronic and optoelectronic devices. This is typically achieved by inkjet printing, microcontact printing, and photo- and e-beam lithography. Here, we investigate a different patterning approach that utilizes local heating, which can be generated by various sources, such as UV-, visible-, and IR-illumination, or by proximity heat transfer. This direct thermal lithography method, termed here heat-induced patterning of inorganic nanomaterials (HIPIN), uses colloidal nanomaterials with thermally unstable surface ligands. We designed several families of such ligands and investigated their chemical and physical transformations responsible for heat-induced changes of nanocrystal solubility. Compared to traditional photolithography using photochemical surface reactions, HIPIN extends the scope of direct optical lithography toward longer wavelengths of visible (532 nm) and infrared (10.6 µm) radiation, which is necessary for patterning optically thick layers (e.g., 1.2 µm) of light-absorbing nanomaterials. HIPIN enables patterning of features defined by the diffraction-limited beam size. Our approach can be used for direct patterning of metal, semiconductor, and dielectric nanomaterials. Patterned semiconductor QDs retain the majority of their as-synthesized photoluminescence quantum yield. This work demonstrates the generality of thermal patterning of nanomaterials and provides a new path for additive device manufacturing using diverse colloidal nanoscale building blocks.

Presynthetic Redox Gated Metal-to-Insulator Transition and Photothermoelectric Properties in Nickel Tetrathiafulvalene-Tetrathiolate Coordination Polymers.

Photothermoelectric (PTE) materials are promising candidates for solar energy harvesting and photodetection applications, especially for near-infrared (NIR) wavelengths. Although the processability and tunability of organic materials are highly advantageous, examples of organic PTE materials are comparatively rare and their PTE performance is typically limited by poor photothermal (PT) conversion. Here, we report the use of redox-active Sn complexes of tetrathiafulvalene-tetrathiolate (TTFtt) as transmetalating agents for the synthesis of presynthetically redox tuned NiTTFtt materials. Unlike the neutral material NiTTFtt, which exhibits n-type glassy-metallic conductivity, the reduced materials Li1.2Ni0.4[NiTTFtt] and [Li(THF)1.5]1.2Ni0.4[NiTTFtt] (THF = tetrahydrofuran) display physical characteristics more consistent with p-type semiconductors. The broad spectral absorption and electrically conducting nature of these TTFtt-based materials enable highly efficient NIR-thermal conversion and good PTE performance. Furthermore, in contrast to conventional PTE composites, these NiTTFtt coordination polymers are notable as single-component PTE materials. The presynthetically tuned metal-to-insulator transition in these NiTTFtt systems directly modulates their PT and PTE properties.

Local Electronic Properties of Coherent Single-Layer WS2/WSe2 Lateral Heterostructures.

Lateral single-layer transition metal dichalcogenide (TMD) heterostructures are promising building blocks for future ultrathin devices. Recent advances in the growth of coherent heterostructures have improved the structural precision of lateral heterojunctions, but an understanding of the electronic effects of the chemical transition at the interface and associated strain is lacking. Here we present a scanning tunneling microscopy study of single-layer coherent TMD heterostructures with nearly uniform strain on each side of the heterojunction interface. We have characterized the local topography and electronic structure of single-layer WS2/WSe2 heterojunctions exhibiting ultrasharp coherent interfaces. Uniform built-in strain on each side of the interface arising from lattice mismatch results in a reduction of the bandgap of WS2. By mapping the tunneling differential conductance across the interface, we find type-II band alignment and an ultranarrow electronic transition region only ∼3 nm in width that arises from wave function mixing between the two materials.

Atomically Thin, Optically Isotropic Films with 3D Nanotopography.

Flat optics aims for the on-chip miniaturization of optical systems for high-speed and low-power operation, with integration of thin and lightweight components. Here, we present atomically thin yet optically isotropic films realized by using three-dimensional (3D) topographic reconstruction of anisotropic two-dimensional (2D) films to balance the out-of-plane and in-plane optical responses on the subwavelength scale. We achieve this by conformal growth of monolayer transition metal dichalcogenide (TMD) films on nanodome-structured substrates. The resulting films show an order-of-magnitude increase in the out-of-plane susceptibility for enhanced angular performance, displaying polarization isotropy in the off-axis absorption, as well as improved photoluminescence emission profiles, compared to their flat-film counterparts. We further show that such 3D geometric programming of optical properties is applicable to different TMD materials, offering spectral generalization over for the entire visible range. Our approach presents a powerful platform for advancing the development of atomically thin flat optics with custom-designed light-matter interactions.

Template-Free Preparation of a Mesopore-Rich Hierarchically Porous Carbon Monolith from a Thermally Rearrangeable Polyurea Network.

A mesopore-rich, hierarchically porous carbon monolith was prepared by carbonizing a polyisocyanurate network derived by thermal rearrangement of a polyurea network. The initial polyurea network was synthesized by the cross-linking polymerization of tetrakis(4-aminophenyl)methane (TAPM) and hexamethylene diisocyanate (HDI) in the sol-forming condition, followed by precipitation into nanoparticulate solids in a nonsolvent. The powder was molded into a shape and then heated at 200-400 °C to obtain the porous carbon precursor composed of the rearranged network. The thermolysis of urea bonds to amine and isocyanate groups, the subsequent cyclization of isocyanates to isocyanurates, and the vaporization of volatiles caused sintering of the nanoparticles into a monolithic network with micro-, meso-, and macropores. The rearranged network was carbonized to obtain a carbon monolith. It was found that the rearranged network, with a high isocyanurate ratio, led to a porous carbon with a high mesopore ratio. The electrical conductivity of the resulting carbon monoliths exhibited a rapid response to carbon dioxide adsorption, indicating efficient gas transport through the hierarchical pore structure.

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.

Tuning Electrical Conductance of MoS2 Monolayers through Substitutional Doping.

Tuning electrical conductivity of semiconducting materials through substitutional doping is crucial for fabricating functional devices. This, however, has not been fully realized in two-dimensional (2D) materials due to the difficulty of homogeneously controlling the dopant concentrations and the lack of systematic study of the net impact of substitutional dopants separate from that of the unintentional doping from the device fabrication processes. Here, we grow wafer-scale, continuous MoS2 monolayers with tunable concentrations of Nb and Re and fabricate devices using a polymer-free approach to study the direct electrical impact of substitutional dopants in MoS2 monolayers. In particular, the electrical conductivity of Nb doped MoS2 in the absence of electrostatic gating is reproducibly tuned over 7 orders of magnitude by controlling the Nb concentration. Our study further indicates that the dopant carriers do not fully ionize in the 2D limit, unlike in their three-dimensional analogues, which is explained by weaker charge screening and impurity band conduction. Moreover, we show that the dopants are stable, which enables the doped films to be processed as independent building blocks that can be used as electrodes for functional circuitry.

A Rectangular Notch-Band UWB Antenna with Controllable Notched Bandwidth and Centre Frequency.

This paper presents the design and realization of a compact ultra-wideband (UWB) antenna with a rectangular notch wireless area network (WLAN) band that has controllable notched bandwidth and center frequency. The UWB characteristics of the antenna are achieved by truncating the lower ends of the rectangular microstrip patch, and the notch characteristics are obtained by using electromagnetic bandgap (EBG) structures. EBGs consist of two rectangular metallic conductors loaded on the back of the radiator, which is connected to the patch by shorting pins. A rectangular notch at the WLAN band with high selectivity is realized by tuning the individual resonant frequencies of the EBGs and merging them. Furthermore, the results show that the bandwidth and frequency of the rectangular notch band could be controlled according to the on-demand rejection band applications. In the demonstration, the rectangular notch band was shifted to X-band satellite communication by tuning the EBG parameters. The simulated and measured results show that the proposed antenna has an operational bandwidth from 3.1-12.5 GHz for |S11| < -10 with a rectangular notch band from 5-6 GHz, thus rejecting WLAN band signals. The antenna also has additional advantages: the overall size of the compact antenna is 16 × 25 × 1.52 mm3 and it has stable gain and radiation patterns.

Two-Dimensional Material Tunnel Barrier for Josephson Junctions and Superconducting Qubits.

Quantum computing based on superconducting qubits requires the understanding and control of the materials, device architecture, and operation. However, the materials for the central circuit element, the Josephson junction, have mostly been focused on using the AlOx tunnel barrier. Here, we demonstrate Josephson junctions and superconducting qubits employing two-dimensional materials as the tunnel barrier. We batch-fabricate and design the critical Josephson current of these devices via layer-by-layer stacking N layers of MoS2 on the large scale. Based on such junctions, MoS2 transmon qubits are engineered and characterized in a bulk superconducting microwave resonator for the first time. Our work allows Josephson junctions to access the diverse material properties of two-dimensional materials that include a wide range of electrical and magnetic properties, which can be used to study the effects of different material properties in superconducting qubits and to engineer novel quantum circuit elements in the future.

Capillary Origami with Atomically Thin Membranes.

Small-scale optical and mechanical components and machines require control over three-dimensional structure at the microscale. Inspired by the analogy between paper and two-dimensional materials, origami-style folding of atomically thin materials offers a promising approach for making microscale structures from the thinnest possible sheets. In this Letter, we show that a monolayer of molybdenum disulfide (MoS2) can be folded into three-dimensional shapes by a technique called capillary origami, in which the surface tension of a droplet drives the folding of a thin sheet. We define shape nets by patterning rigid metal panels connected by MoS2 hinges, allowing us to fold micron-scale polyhedrons. Finally, we demonstrate that these shapes can be folded in parallel without the use of micropipettes or microfluidics by means of a microemulsion of droplets that dissolves into the bulk solution to drive folding. These results demonstrate controllable folding of the thinnest possible materials using capillary origami and indicate a route forward for design and parallel fabrication of more complex three-dimensional micron-scale structures and machines.

Reversible MoS2 Origami with Spatially Resolved and Reconfigurable Photosensitivity.

Two-dimensional layered materials (2DLMs) have been extensively studied in a variety of planar optoelectronic devices. Three-dimensional (3D) optoelectronic structures offer unique advantages including omnidirectional responses, multipolar detection, and enhanced light-matter interactions. However, there has been limited success in transforming monolayer 2DLMs into reconfigurable 3D optoelectronic devices due to challenges in microfabrication and integration of these materials in truly 3D geometries. Here, we report an origami-inspired self-folding approach to reversibly transform monolayer molybdenum disulfide (MoS2) into functional 3D optoelectronic devices. We pattern and integrate monolayer MoS2 and gold (Au) onto differentially photo-cross-linked thin polymer (SU8) films. The devices reversibly self-fold due to swelling gradients in the SU8 films upon solvent exchange. We fabricate a wide variety of optically active 3D MoS2 microstructures including pyramids, cubes, flowers, dodecahedra, and Miura-oris, and we simulate the self-folding mechanism using a coarse-grained mechanics model. Using finite-difference time-domain (FDTD) simulation and optoelectronic characterization, we demonstrate that the 3D self-folded MoS2 structures show enhanced light interaction and are capable of angle-resolved photodetection. Importantly, the structures are also reversibly reconfigurable upon solvent exchange with high tunability in the optical detection area. Our approach provides a versatile strategy to reversibly configure 2D materials in 3D optoelectronic devices of broad relevance to flexible and wearable electronics, biosensing, and robotics.

Strain Mapping of Two-Dimensional Heterostructures with Subpicometer Precision.

Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach to map 2D heterojunction lattice and strain profiles with subpicometer precision and the ability to identify dislocations and out-of-plane ripples. We collected diffraction patterns from a focused electron beam for each real-space scan position with a high-speed, high dynamic range, momentum-resolved detector-the electron microscope pixel array detector (EMPAD). The resulting four-dimensional (4D) phase space data sets contain the full spatially resolved lattice information on the sample. By using this technique on tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures, we have mapped lattice distortions with 0.3 pm precision across multimicron fields of view and simultaneously observed the dislocations and ripples responsible for strain relaxation in 2D laterally epitaxial structures.