Spectroscopic and Device Aspects of Nanocrystal Quantum Dots.

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Quantum Dot Thin-Films as Rugged, High-Performance Photocathodes.

Typical use of colloidal quantum dots (QDs) as bright, tunable phosphors in real applications relies on engineering of their surfaces to suppress the loss of excited carriers to surface trap states or to the surrounding medium. Here, we explore the utility of QDs in an application that actually exploits their propensity toward photoionization, namely within efficient and robust photocathodes for use in next-generation electron guns. In order to establish the relevance of QD films as photocathodes, we evaluate the efficiency of electron photoemission of films of a variety of compositions in a typical electron gun configuration. By quantifying photocurrent as a function of excitation photon energy, excitation intensity and pulse duration, we establish the role of hot electrons in photoemission within the multiphoton excitation regime. We also demonstrate the effect of QD structure and film deposition methods on efficiency, which suggests numerous pathways for further enhancements. Finally, we show that QD photocathodes offer superior efficiencies relative to standard copper cathodes and are robust against degradation under ambient conditions.

Thickness-Controlled Quasi-Two-Dimensional Colloidal PbSe Nanoplatelets.

We demonstrate controlled synthesis of discrete two-dimensional (2D) PbSe nanoplatelets (NPLs), with measurable photoluminescence, via oriented attachment directed by quantum dot (QD) surface chemistry. Halide passivation is critical to the growth of these (100) face-dominated NPLs, as corroborated by density functional theory studies. PbCl2 moieties attached to the (111) and (110) of small nanocrystals form interparticle bridges, aligning the QDs and leading to attachment. We find that a 2D bridging network is energetically favored over a 3D network, driving the formation of NPLs. Although PbI2 does not support bridging, its presence destabilizes the large (100) faces of NPLs, providing means for tuning NPL thickness. Spectroscopic analysis confirms the predicted role of thickness-dependent quantum confinement on the NPL band gap.

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films.

The use of semiconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic chemical surface treatments to enhance electronic coupling between QDs and allow for efficient charge transport in QD films. Despite their importance in solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical treatments for lead chalcogenide (PbE; E = S, Se, Te) QDs have lagged behind those of, for instance, II-VI semiconductor QDs. Here, we introduce a method for fast and effective ligand exchange for PbE QDs in solution, resulting in QDs completely passivated by a wide range of small anionic ligands. Due to electrostatic stabilization, these QDs are readily dispersible in polar solvents, in which they form highly concentrated solutions that remain stable for months. QDs of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the effect of the surface ionic double layer on electronic passivation of QD surfaces, which we find can be explained using the hard/soft acid-base theory. Importantly, we prepare highly conductive films of PbS, PbSe, and PbTe QDs by directly casting from solution without further chemical treatment, as determined by field-effect transistor measurements. This method allows for precise control over the surface chemistry, and therefore the transport properties of deposited films. It also permits single-step deposition of films of unprecedented thickness via continuous processing techniques, as we demonstrate by preparing a dense, smooth, 5.3-µm-thick PbSe QD film via doctor-blading. As such, it offers important advantages over laborious layer-by-layer methods for solar cells and photodetectors, while opening the door to new possibilities in ionizing-radiation detectors.

Mn2+-Doped Lead Halide Perovskite Nanocrystals with Dual-Color Emission Controlled by Halide Content.

Impurity doping has been widely used to endow semiconductor nanocrystals with novel optical, electronic, and magnetic functionalities. Here, we introduce a new family of doped NCs offering unique insights into the chemical mechanism of doping, as well as into the fundamental interactions between the dopant and the semiconductor host. Specifically, by elucidating the role of relative bond strengths within the precursor and the host lattice, we develop an effective approach for incorporating manganese (Mn) ions into nanocrystals of lead-halide perovskites (CsPbX3, where X = Cl, Br, or I). In a key enabling step not possible in, for example, II-VI nanocrystals, we use gentle chemical means to finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via postsynthetic anion exchange. We observe a dramatic effect of halide identity on relative intensities of intrinsic band-edge and Mn emission bands, which we ascribe to the influence of the energy difference between the corresponding transitions on the characteristics of energy transfer between the Mn ion and the semiconductor host.

Temperature and magnetic-field dependence of radiative decay in colloidal germanium quantum dots.

We conduct spectroscopic and theoretical studies of photoluminescence (PL) from Ge quantum dots (QDs) fabricated via colloidal synthesis. The dynamics of late-time PL exhibit a pronounced dependence on temperature and applied magnetic field, which can be explained by radiative decay involving two closely spaced, slowly emitting exciton states. In 3.5 nm QDs, these states are separated by ∼1 meV and are characterized by ∼82 µs and ∼18 µs lifetimes. By using a four-band formalism, we calculate the fine structure of the indirect band-edge exciton arising from the electron-hole exchange interaction and the Coulomb interaction of the Γ-point hole with the anisotropic charge density of the L-point electron. The calculations suggest that the observed PL dynamics can be explained by phonon-assisted recombination of excitons thermally distributed between the lower-energy "dark" state with the momentum projection J = ± 2 and a higher energy "bright" state with J = ± 1. A fairly small difference between lifetimes of these states is due to their mixing induced by the exchange term unique to crystals with a highly symmetric cubic lattice such as Ge.

Shape-Controlled Narrow-Gap SnTe Nanostructures: From Nanocubes to Nanorods and Nanowires.

The rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

Effect of the core/shell interface on auger recombination evaluated by single-quantum-dot spectroscopy.

Previous single-particle spectroscopic studies of colloidal quantum dots have indicated a significant spread in biexciton lifetimes across an ensemble of nominally identical nanocrystals. It has been speculated that in addition to dot-to-dot variation in physical dimensions, this spread is contributed to by variations in the structure of the quantum dot interface, which controls the shape of the confinement potential. Here, we directly evaluate the effect of the composition of the core-shell interface on single- and multiexciton dynamics via side-by-side measurements of individual core-shell CdSe/CdS nanocrystals with a sharp versus smooth (graded) interface. To realize the latter type of structures we incorporate a CdSexS1-x alloy layer of controlled composition and thickness between the CdSe core and the CdS shell. We observe that while having essentially no effect on single-exciton decay, the interfacial alloy layer leads to a systematic increase in biexciton lifetimes, which correlates with the increase in the biexciton emission efficiency, as inferred from two-photon correlation measurements. These observations provide direct experimental evidence that in addition to the size of the quantum dot, its interfacial properties also significantly affect the rate of Auger recombination, which governs biexciton decay. These findings help rationalize previous observations of a significant heterogeneity in the biexciton lifetimes across similarly sized quantum dots and should facilitate the development of "Auger-recombination-free" colloidal nanostructures for a range of applications from lasers and light-emitting diodes to photodetectors and solar cells.

Carrier multiplication in semiconductor nanocrystals: influence of size, shape, and composition.

During carrier multiplication (CM), also known as multiexciton generation (MEG), absorption of a single photon produces multiple electron-hole pairs, or excitons. This process can appreciably increase the efficiency of photoconversion, which is especially beneficial in photocatalysis and photovoltaics. This Account reviews recent progress in understanding the CM process in semiconductor nanocrystals (NCs), motivated by the challenge researchers face to quickly identify candidate nanomaterials with enhanced CM. We present a possible solution to this problem by showing that, using measured biexciton Auger lifetimes and intraband relaxation rates as surrogates for, respectively, CM time constants and non-CM energy-loss rates, we can predict relative changes in CM yields as a function of composition. Indeed, by studying PbS, PbSe, and PbTe NCs of a variety of sizes we determine that the significant difference in CM yields for these compounds comes from the dissimilarities in their non-CM relaxation channels, i.e., the processes that compete with CM. This finding is likely general, as previous observations of a material-independent, "universal" volume-scaling of Auger lifetimes suggest that the timescale of the CM process itself is only weakly affected by NC composition. We further explore the role of nanostructure shape in the CM process. We observe that a moderate elongation (aspect ratio of 6-7) of PbSe NCs can cause up to an approximately two-fold increase in the multiexciton yield compared to spherical nanoparticles. The increased Auger lifetimes and improved charge transport properties generally associated with elongated nanostructures suggest that lead chalcogenide nanorods are a promising system for testing CM concepts in practical photovoltaics. Historically, experimental considerations have been an important factor influencing CM studies. To this end, we discuss the role of NC photocharging in CM measurements. Photocharging can distort multiexciton dynamics, leading to erroneous estimations of the CM yield. Here, we show that in addition to distorting time-resolved CM signals, photocharging also creates spectral signatures that mimic CM. This re-emphasizes the importance of a careful analysis of the potential effect of charged species in both optical and photocurrent-based measurements of this process.

Response of semiconductor nanocrystals to extremely energetic excitation.

Using a combination of transient photoluminescence and transient cathodoluminescence (trCL) we, for the first time, identify and quantify the distribution of electronic excitations in colloidal semiconductor nanocrystals (NCs) under high-energy excitation. Specifically, we compare the temporally and spectrally resolved radiative recombination produced following excitation with 3.1 eV, subpicosecond photon pulses, or with ionizing radiation in the form of 20 keV picosecond electron pulses. Using this approach, we derive excitation branching ratios produced in the scenario of energetic excitation of NCs typical of X-ray, neutron, or gamma-ray detectors. Resultant trCL spectra and dynamics for CdSe NCs indicate that all observable emission can be attributed to recombination between states within the quantum-confined nanostructure with particularly significant yields of trions and multiexcitons produced by carrier multiplication. Our observations offer direct insight into the transduction of atomic excitation into quantum-confined states within NCs, explain that the root cause of poor performance in previous scintillation studies arises from efficient nonradiative Auger recombination, and suggest routes for improved detector materials.

Aspect ratio dependence of auger recombination and carrier multiplication in PbSe nanorods.

Nanomaterials with efficient carrier multiplication (CM), that is, generation of multiple electron-hole pairs by single photons, have been the object of intense scientific interest as potential enablers of high efficiency generation-III photovoltaics. In this work, we explore nanocrystal shape control as a means for enhancing CM. Specifically, we investigate the influence of aspect ratio (ρ) of PbSe nanorods (NRs) on both CM and the inverse of this process, Auger recombination. We observe that Auger lifetimes in NRs increase with increasing particle volume and for a fixed cross-sectional size follow a linear dependence on the NR length. For a given band gap energy, the CM efficiency in NRs shows a significant dependence on aspect ratio and exhibits a maximum at ρ ∼ 6-7 for which the multiexciton yields are a factor of ca. 2 higher than those in quantum dots with a similar bandgap energy. To rationalize our experimental observations, we analyze the influence of dimensionality on both CM and non-CM energy-loss mechanisms and offer possible explanations for the seemingly divergent effects the transition from zero- to one-dimensional confinement has on the closely related processes of Auger recombination and CM.

Comparison of carrier multiplication yields in PbS and PbSe nanocrystals: the role of competing energy-loss processes.

Infrared band gap semiconductor nanocrystals are promising materials for exploring generation III photovoltaic concepts that rely on carrier multiplication or multiple exciton generation, the process in which a single high-energy photon generates more than one electron-hole pair. In this work, we present measurements of carrier multiplication yields and biexciton lifetimes for a large selection of PbS nanocrystals and compare these results to the well-studied PbSe nanocrystals. The similar bulk properties of PbS and PbSe make this an important comparison for discerning the pertinent properties that determine efficient carrier multiplication. We observe that PbS and PbSe have very similar biexciton lifetimes as a function of confinement energy. Together with the similar bulk properties, this suggests that the rates of multiexciton generation, which is the inverse of Auger recombination, are also similar. The carrier multiplication yields in PbS nanocrystals, however, are strikingly lower than those observed for PbSe nanocrystals. We suggest that this implies the rate of competing processes, such as phonon emission, is higher in PbS nanocrystals than in PbSe nanocrystals. Indeed, our estimations for phonon emission mediated by the polar Fröhlich-type interaction indicate that the corresponding energy-loss rate is approximately twice as large in PbS than in PbSe.

Highly effective surface passivation of PbSe quantum dots through reaction with molecular chlorine.

PbSe nanocrystal quantum dots (NQDs) are a promising active material for a range of optoelectronic devices, including solar cells, high-sensitivity infrared (IR) photodetectors, and IR-emitting diodes and lasers. However, device realization has been constrained by these NQDs' chemical instability toward oxidation, which leads to uncontrollable changes in optical and electronic properties. Here, we present a simple method to enhance the stability of PbSe NQDs against oxidation and to improve their optical properties through reaction with molecular chlorine. The chlorine molecules preferentially etch out surface Se ions and react with Pb ions to form a thin (1-2 monolayers) PbCl(x) passivation layer which effectively prevents oxidation during long-term air exposure while passivating surface trap states to increase photoluminescence efficiency and decrease photocharging. Our method is simple, widely applicable to PbSe and PbS NQDs of a range of sizes, compatible with solution-based processes for fabricating NQD-based devices, and effective both in solution and in solid NQD films; thus, it is a practical protocol for facilitating advances over the full range of optoelectronic applications.

Efficient synthesis of highly luminescent copper indium sulfide-based core/shell nanocrystals with surprisingly long-lived emission.

We report an efficient synthesis of copper indium sulfide nanocrystals with strong photoluminescence in the visible to near-infrared. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. The overgrowth of as-prepared nanocrystals with a few monolayers of CdS or ZnS increases the photoluminescence quantum efficiency to > 80%. On the basis of time-resolved spectroscopic studies of core/shell particles, we conclude that the emission is due to an optical transition that couples a quantized electron state to a localized hole state, which is most likely associated with an internal defect.

Spin-polarized Mn2+ emission from Mn-doped colloidal nanocrystals.

We report magnetophotoluminescence studies of strongly quantum-confined 0D diluted magnetic semiconductors (DMS), realized in Mn(2+)-doped ZnSe/CdSe core-shell colloidal nanocrystals. In marked contrast to their 3D (bulk), 2D (quantum well), 1D (quantum wire), and 0D (self-assembled quantum dot) DMS counterparts, the ubiquitous yellow emission band from internal d-d ((4)T(1)→(6)A(1)) transitions of the Mn(2+) ions in these nanocrystals is not suppressed in applied magnetic fields and does become circularly polarized. This polarization tracks the Mn(2+) magnetization, and is accompanied by a sizable energy splitting between right- and left-circular emission components that scales with the exciton-Mn sp-d coupling strength (which, in turn, is tunable with nanocrystal size). These data highlight the influence of strong quantum confinement on both the excitation and the emission mechanisms of magnetic ions in DMS nanomaterials.

Apparent versus true carrier multiplication yields in semiconductor nanocrystals.

Generation of multiple electron-hole pairs (excitons) by single photons, known as carrier multiplication (CM), has the potential to appreciably improve the performance of solar photovoltaics. In semiconductor nanocrystals, this effect usually has been detected using a distinct dynamical signature of multiexcitons associated with their fast Auger recombination. Here, we show that uncontrolled photocharging of the nanocrystal core can lead to exaggeration of the Auger decay component and, as a result, significant deviations of the apparent CM efficiencies from their true values. Specifically, we observe that for the same sample, apparent multiexciton yields can differ by a factor of approximately 3 depending on whether the nanocrystal solution is static or stirred. We show that this discrepancy is consistent with photoinduced charging of the nanocrystals in static solutions, the effect of which is minimized in the stirred case where the charged nanocrystals are swept from the excitation volume between sequential excitation pulses. Using side-by-side measurements of CM efficiencies and nanocrystal charging, we show that the CM results obtained under static conditions converge to the values measured for stirred solutions after we accurately account for the effects of photocharging. This study helps to clarify the recent controversy over CM in nanocrystals and highlights some of the issues that must be carefully considered in spectroscopic studies of this process.

Infrared-active heterostructured nanocrystals with ultralong carrier lifetimes.

We present the synthesis of composite PbSe/CdSe/CdS nanocrystals with two distinct geometries: core/shell/shell structures and tetrapods. These novel nanostructures exhibit extremely long carrier decay times up to 20 micros that are combined with high emission efficiencies in the infrared. The increase in carrier lifetimes is attributed to the reduction of the electron-hole overlap as a result of delocalization of the electron wave function into the outer CdS shell or arms. The ultralong carrier lifetimes and controlled geometry render these nanocrystals attractive for a variety of applications from lasing to photocatalysis and photovoltaics.

Colloidal synthesis of infrared-emitting germanium nanocrystals.

In this study, we synthesized Ge nanocrystals and studied the effects of variables such as solvents, reducing agents, reaction temperature, and capping ligands. The resulting nanocrystals showed infrared photoluminescence with quantum yields as high as approximately 8% and enhanced resistance to oxidation. Size analysis of the samples by transmission electron microscopy revealed that the size dependence of the emission is consistent with the effects of quantum confinement.

A reduction pathway in the synthesis of PbSe nanocrystal quantum dots.

Colloidal nanocrystal quantum dots (NQDs) of narrow band gap materials are of substantial general interest because of their unparalleled potential as infrared fluorophores. While PbSe NQDs are a promising class of infrared-active nanocrystals due to high emission quantum yields and a wide useful spectral range, typical synthetic methods are sensitive to a variety of factors, including the influence of solvent/ligand impurities that render reproducibility difficult. In this work, we specifically examine the effects of diphenylphosphine and 1,2-hexadecanediol, as surrogates for putative trioctylphosphine-based reducing impurities, on the synthesis of PbSe NQDs. Specifically, we compare their influence on NQD size, chemical yield, and photoluminescence quantum yield. While both additives substantially increase the chemical yield of the synthesis, they demonstrate markedly different effects on emission quantum yield of the product NQDs. We further examine the effects of reaction temperature and oleic acid concentration on the diol-assisted synthesis. Increased oleic acid concentration led to somewhat higher growth rates and larger NQDs but at the expense of lower chemical yield. Temperature was found to have an even greater effect on growth rate and NQD size. Neither temperature nor oleic acid concentration was found to have noticeable effects on NQD emission quantum yield. Finally, we use numerical simulations to support the conjecture that the increased yield is likely a result of faster monomer formation, consistent with the activation of an additional reaction pathway by the reducing species.

New aspects of carrier multiplication in semiconductor nanocrystals.

One consequence of strong spatial confinement of electronic wave functions in semiconductor nanocrystals (NCs) is a significant enhancement in carrier-carrier Coulomb interactions. This effect leads to a number of novel physical phenomena including ultrafast decay of multiple electron-hole pairs (multiexcitons) by Auger recombination and high-efficiency generation of mutiexcitons by single photons via carrier multiplication (CM). Significant recent interest in multiexciton phenomena in NCs has been stimulated by studies of NC lasing, as well as potential applications of CM in solar-energy conversion. The focus of this Account is on CM. In this process, the kinetic energy of a "hot" electron (or a "hot" hole) does not dissipate as heat but is, instead, transferred via the Coulomb interaction to the valence-band electron, exciting it across the energy gap. Because of restrictions imposed by energy and translational-momentum conservation, as well as rapid energy loss due to phonon emission, CM is inefficient in bulk semiconductors, particularly at energies relevant to solar energy conversion. On the other hand, the CM efficiency can potentially be enhanced in zero-dimensional NCs because of factors such as a wide separation between discrete electronic states, which inhibits phonon emission ("phonon bottleneck"), enhanced Coulomb interactions, and relaxation in translational-momentum conservation. Here, we investigate CM in PbSe NCs by applying time-resolved photoluminescence and transient absorption. Both techniques show clear signatures of CM with efficiencies that are in good agreement with each other. NCs of the same energy gap show moderate batch-to-batch variations (within approximately 30%) in apparent multiexciton yields and larger variations (more than a factor of 3) due to differences in sample conditions (stirred vs static solutions). These results indicate that NC surface properties may affect the CM process. They also point toward potential interference from extraneous effects such as NC photoionization that can distort the results of CM studies. CM yields measured under conditions when extraneous effects are suppressed via intense sample stirring and the use of extremely low pump levels (0.02-0.03 photons absorbed per NC per pulse) reveal that both the electron-hole creation energy and the CM threshold are reduced compared with those in bulk solids. These results indicate a confinement-induced enhancement in the CM process in NC materials. Further optimization of CM performance should be possible by utilizing more complex (for example, shaped-controlled or heterostructured) NCs that allow for facile manipulation of carrier-carrier interactions, as well as single and multiexciton energies and dynamics.