RESUMO
The damage behavior and defect evolution in Si-doped and Fe-doped ß-Ga2O3 crystals were investigated using an electron irradiation of 1 MeV at a dose of 1 × 1016 cm-2 in conjunction with structural and optoelectronic characterizations. Distinct decline in electron spin resonance (ESR) signal with g = 1.96 and a UV luminesce of 375 nm were observed in Si-doped ß-Ga2O3 due to the capture of free carriers by irradiation defects. As for the Fe-doped sample, both defect-related blue emission and Cr3+ impurity-related red luminescence underwent prominent suppression after electron irradiation, which can be correlated to the creation of VO and VGa defects and the formation of non-radiative recombination. Noticeably, neither VO- nor VGa-related ESR signals were detected in Fe-doped and Si-doped ß-Ga2O3 irrespective of irradiation; g = 2.003 resonance was observed in Mg-doped ß-Ga2O3 and it experienced remarkable augmentation after electron irradiation. We assigned the g = 2.003 peak to the VGa acceptor. Besides, although the Raman mode of 258 cm-1 in Si-doped ß-Ga2O3 has been suggested to be electron concentration dependent, no obvious change in peak intensity was observed before and after electron irradiation.