Grains and grain boundaries in single-layer graphene atomic patchwork quilts.

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in two-dimensional materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, which is a hexagonal, two-dimensional crystal of carbon atoms. Single-atom-thick graphene sheets can now be produced by chemical vapour deposition on scales of up to metres, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical and mechanical properties that strongly depend on their atomic arrangement. Yet because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here we use a combination of old and new transmission electron microscopy techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly through pentagon-heptagon pairs. Rather than individually imaging the several billion atoms in each grain, we use diffraction-filtered imaging to rapidly map the location, orientation and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanning probe and transport measurements, we show that these grain boundaries severely weaken the mechanical strength of graphene membranes but do not as drastically alter their electrical properties. These techniques open a new window for studies on the structure, properties and control of grains and grain boundaries in graphene and other two-dimensional materials.

Contact transfer length investigation of a 2D nanoparticle network by scanning probe microscopy.

Nanoparticle network devices find growing application in sensing and electronics. One recurring challenge in the design and fabrication of this class of devices is ensuring a stable interface via robust yet unobstructive electrodes. A figure of merit which dictates the minimum electrode overlap required for optimal charge injection into the network is the contact transfer length. However, we find that traditional contact characterization using the transmission line model, an indirect method which requires extrapolation, is insufficient for network devices. Instead, we apply Kelvin probe force microscopy to characterize the contact resistance by imaging the surface potential with nanometer resolution. We then use scanning probe lithography to directly investigate the contact transfer length. We have determined the transfer length in graphene contacted devices to be 200-400 nm, thus apt for further device reduction which is often necessary for on-site sensing applications. Simulations from a two-dimensional resistor model support our observations and are expected to be an important tool for further optimizing the design of nanoparticle-based devices.

Square-micrometer-sized, free-standing organometallic sheets and their square-centimeter-sized multilayers on solid substrates.

Oligofunctional terpyridine-based monomers are spread at an air/water interface, where they are connected with transition metal salts such as Fe(II) into mechanically coherent monolayer sheets of macroscopic dimension. The conversions of these processes are determined by XPS for several monomer/metal ion combinations. The sheets are transferred onto TEM grids, the 20 × 20 square micrometer sized holes of which can be spanned. AFM indentation experiments provide in-plane elastic moduli which are compared with naturally occurring sheets such as graphene. The new organometallic sheets are also used to create multilayer assemblies on square centimeter length scales on solid substrates. Finally some directions are provided where this research can lead to in future and where its application potential lies.

Softened elastic response and unzipping in chemical vapor deposition graphene membranes.

We use atomic force microscopy to image grain boundaries and ripples in graphene membranes obtained by chemical vapor deposition. Nanoindentation measurements reveal that out-of-plane ripples effectively soften graphene's in-plane stiffness. Furthermore, grain boundaries significantly decrease the breaking strength of these membranes. Molecular dynamics simulations reveal that grain boundaries are especially weakening when subnanometer voids are present in the lattice. Finally, we demonstrate that two graphene membranes brought together form membranes with higher resistance to breaking.

Large-scale arrays of single-layer graphene resonators.

We fabricated large arrays of suspended, single-layer graphene membrane resonators using chemical vapor deposition (CVD) growth followed by patterning and transfer. We measure the resonators using both optical and electrical actuation and detection techniques. We find that the resonators can be modeled as flat membranes under tension, and that clamping the membranes on all sides improves agreement with our model and reduces the variation in frequency between identical resonators. The resonance frequency is tunable with both electrostatic gate voltage and temperature, and quality factors improve dramatically with cooling, reaching values up to 9000 at 10 K. These measurements show that it is possible to produce large arrays of CVD-grown graphene resonators with reproducible properties and the same excellent electrical and mechanical properties previously reported for exfoliated graphene.

Transfer-free batch fabrication of single layer graphene transistors.

Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, ( Ferrari, A. C. et al. Phys. Rev. Lett. 2006, 97, 187401.) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm(2)/V.s and current saturation characteristics similar to devices based on exfoliated graphene ( Meric, I.. et al. Nat Nanotechnol. 2008, 3, 654-659).

High-throughput graphene imaging on arbitrary substrates with widefield Raman spectroscopy.

Raman spectroscopy has been used extensively to study graphene and other sp(2)-bonded carbon materials, but the imaging capability of conventional micro-Raman spectroscopy is limited by the technique's low throughput. In this work, we apply an existing alternative imaging mode, widefield Raman imaging (WRI), to image and characterize graphene films on arbitrary substrates with high throughput. We show that WRI can be used to image graphene orders of magnitude faster than micro-Raman imaging allows, while still obtaining detailed spectral information about the sample. The advantages of WRI allow characterization of graphene under conditions that would be impossible or prohibitively time-consuming with other techniques, such as micro-Raman imaging or reflected optical microscopy. To demonstrate these advantages, we show that WRI enables graphene imaging on a large variety of substrates (copper, unoxidized silicon, suspended), large-scale studies of defect distribution in CVD graphene samples, and real-time imaging of dynamic processes.

Tailoring electrical transport across grain boundaries in polycrystalline graphene.

Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scattering of charge carriers at grain boundaries (GBs) could degrade its performance relative to exfoliated, single-crystal graphene. However, the electrical properties of GBs have so far been addressed indirectly without simultaneous knowledge of their locations and structures. We present electrical measurements on individual GBs in CVD graphene first imaged by transmission electron microscopy. Unexpectedly, the electrical conductance improves by one order of magnitude for GBs with better interdomain connectivity. Our study suggests that polycrystalline graphene with good stitching may allow for uniformly high electrical performance rivaling that of exfoliated samples, which we demonstrate using optimized growth conditions and device geometry.