RESUMO
The field of valleytronics considers the creation and manipulation of "valley states", charge excitations characterized by a particular value of the crystal momentum in the Brillouin zone. Here we show, using the example of minimally gapped (≤40 meV) graphene, that there exist lightforms that create almost perfect valley contrasting current states (up to â¼80% valley purity) in the absence of a valley contrasting charge excitation. These "momentum streaked" THz waveforms act by deforming the excited state population in momentum space such that current flows at one valley yet is blocked at the conjugate valley. This approach both unlocks the potential of graphene as a materials platform for valleytronics, as gaps of 10-40 meV are robustly found in useful experimental contexts such as graphene/hBN systems, while simultaneously providing a tool toward ultrafast light control of valley currents in diverse minimally gapped matter, including many topological insulator systems.
RESUMO
The established paradigm to create valley states, excitations at local band extrema ("valleys"), is through selective occupation of specific valleys via circularly polarized laser pulses. Here we show a second way exists to create valley states, not by valley population imbalance but by "light-shaping" in momentum space, i.e. controlling the shape of the distribution of excited charge at each valley. While noncontrasting in valley charge, such valley states are instead characterized by a valley current, identically zero at one valley and finite and large at the other. We demonstrate that these (i) are robust to quantum decoherence, (ii) allow lossless toggling of the valley state with successive femtosecond laser pulses, and (iii) permit valley contrasting excitation both with and without a gap. Our findings open a route to robust ultrafast and switchable valleytronics in a wide scope of 2d materials, bringing closer the promise of valley-based electronics.
RESUMO
Parallel ("nested") regions of a Fermi surface (FS) drive instabilities of the electron fluid, for example, the spin density wave in elemental chromium. In one-dimensional materials, the FS is trivially fully nested (a single nesting vector connects two "Fermi dots"), while in higher dimensions only a fraction of the FS consists of parallel sheets. We demonstrate that the tiny angle regime of twist bilayer graphene (TBLG) possesses a phase, accessible by interlayer bias, in which the FS consists entirely of nestable "Fermi lines", the first example of a completely nested FS in a two-dimensional (2D) material. This nested phase is found both in the ideal as well as relaxed structure of the twist bilayer. We demonstrate excellent agreement with recent STM images of topological states in this material and elucidate the connection between these and the underlying Fermiology. We show that the geometry of the Fermi lines network is controllable by the strength of the applied interlayer bias, and thus TBLG offers unprecedented access to the physics of FS nesting in 2D materials.
RESUMO
Spin and valley indices represent the key quantum labels of quasi-particles in a wide class of two-dimensional materials and form the foundational elements of the fields of spintronics and valleytronics. Control over these degrees of freedom, therefore, remains the central challenge in these fields. Here, we show that femtosecond laser light combining optical frequency circularly polarized pulse and a terahertz (THz) frequency linearly polarized pulse, a so-called "hencomb" pulse, can generate precisely tailored and 90% pure spin currents for the dichalcogenide WSe2 and >75% pure valley currents for bilayer graphene with gaps greater than 120 millielectron volts (dephasing time, 20 femtoseconds). The frequency of the circular light component and the polarization vector of the THz light component are shown to represent the key control parameters of these pulses. Our results thus open a route toward light control over spin/valley current states at ultrafast times.