High harmonic generation enhanced by magnetic dipole resonance in an amorphous silicon metasurface.

We report on the enhancement of high harmonic generation (HHG) yield in a metasurface consisting of amorphous silicon disks in a periodic array on an insulator substrate. The structure was designed and optimized using the finite-difference time-domain method for the maximum enhancement, which reaches the factor of 20-times compared to the unstructred surface. The local field is enhanced by a broadband magnetic resonance mode allowing to use ultrashort laser pulses with Fourier transform limit down to 40 fs. Due to the anisotropic structure of the metasurface, both the local-field enhancement and the HHG yield show strong polarization anisotropy.

Ultrafast Dynamics of Valley-Polarized Excitons in WSe2 Monolayer Studied by Few-Cycle Laser Pulses.

We report on the experimental investigation of the ultrafast dynamics of valley-polarized excitons in monolayer WSe2 using transient reflection spectroscopy with few-cycle laser pulses with 7 fs duration. We observe that at room temperature, the anisotropic valley population of excitons decays on two different timescales. The shorter decay time of approximately 120 fs is related to the initial hot exciton relaxation related to the fast direct recombination of excitons from the radiative zone, while the slower picosecond dynamics corresponds to valley depolarization induced by Coloumb exchange-driven transitions of excitons between two inequivalent valleys.

Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film.

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films, i.e. that the carriers excited within the centers do not leak into the defects of the film. The activation energy ΔE = 54 meV and the attempt frequency α = 2.6 were extracted from the measured data. These values corresponded very well with the published values for SiV centers in monocrystalline diamond. We support this claim by measuring the transient absorption via a pump and probe technique, where we separated the nanosecond recombination dynamics of carriers in SiV centers from the picosecond decay dynamics of polycrystalline diamond defects. Our results show that PL emission properties of SiV centers in polycrystalline diamond thin films prepared via chemical vapor deposition are very similar to those in monocrystalline diamond thereby opening the door for their application in diamond photonics and sensing.

Large prolongation of free-exciton photoluminescence decay in diamond by two-photon excitation.

We report on time-resolved photoluminescence of a free-exciton in IIa chemical vapor deposition diamond crystal. Large difference between decay times for one- and two-photon excitation processes was observed. The longest room-temperature exciton photoluminescence lifetime τ(FE)=220 ns was obtained under two-photon excitation with a photon energy of 4.7 eV. The role of diffusion and surface recombination velocity in exciton photoluminescence dynamics was studied using a new optical method based on two-photon excited time-resolved photoluminescence. The measured room-temperature value of diffusion coefficient in diamond was D=40 cm(2)/s.

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride.

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current-voltage (I-V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.