Tension-compression asymmetry in amorphous silicon.

Hard and brittle materials usually exhibit a much lower strength when loaded in tension than in compression. However, this common-sense behaviour may not be intrinsic to these materials, but arises from their higher flaw sensitivity to tensile loading. Here, we demonstrate a reversed and unusually pronounced tension-compression asymmetry (tensile strength exceeds compressive strength by a large margin) in submicrometre-sized samples of isotropic amorphous silicon. The abnormal asymmetry in the yield strength and anelasticity originates from the reduction in shear modulus and the densification of the shear-activated configuration under compression, altering the magnitude of the activation energy barrier for elementary shear events in amorphous Si. In situ coupled electrical tests corroborate that compressive strains indeed cause increased atomic coordination (metallization) by transforming some local structures from sp3-bonded semiconducting motifs to more metallic-like sites, lending credence to the mechanism we propose. This finding opens up an unexplored regime of intrinsic tension-compression asymmetry in materials.

Tunable Anelasticity in Amorphous Si Nanowires.

In situ bending tests of amorphous Si nanowires (a-Si NWs) found different elastic behavior depending on whether they were straight or curved to begin with. The axially straight NWs exhibit pure elastic deformation; however, the axially curved NWs exhibit obvious anelastic behavior when they are bent in the direction of original curvature. On the basis of STEM-EELS analysis, we propose that the underlying mechanism for this anelastic behavior is a bond-switching assisted redistribution of the nonuniform density (structure) in the curved NWs under the inhomogeneous stress field. This mechanism was further supported by the fact that the originally straight a-Si NWs also display similar anelasticity with the as-grown curved NWs after focused ion beam irradiation that can cause nonuniform structure distribution. As compared to what has been reported in other 1D materials, the anelasticity of a-Si NWs can be tuned by modifying their morphology, controlling the loading direction, or irradiating them via ion beam. Our findings suggest that a-Si NWs could be a promising material in the nanoscale damping systems, especially the semiconductor nanodevices.

Helium Ion Microscope Fabrication Causing Changes in the Structure and Mechanical Behavior of Silicon Micropillars.

Silicon is used as a prominent case to demonstrate the dramatic effects of helium ion microscope nanofabrication. Structurally, a submicrometer Si pillar can turn completely amorphous at He+ doses typically used for micromachining, forming nanobubbles at higher doses. In terms of mechanical properties, the flow stress decreases markedly with increasing dosage, and the softened amorphous Si exhibits spread-out plastic flow.

Inward motion of diamond nanoparticles inside an iron crystal.

In the absence of externally applied mechanical loading, it would seem counterintuitive that a solid particle sitting on the surface of another solid could not only sink into the latter, but also continue its rigid-body motion towards the interior, reaching a depth as distant as thousands of times the particle diameter. Here, we demonstrate such a case using in situ microscopic as well as bulk experiments, in which diamond nanoparticles ~100 nm in size move into iron up to millimeter depth, at a temperature about half of the melting point of iron. Each diamond nanoparticle is nudged as a whole, in a displacive motion towards the iron interior, due to a local stress induced by the accumulation of iron atoms diffusing around the particle via a short and easy interfacial channel. Our discovery underscores an unusual mass transport mode in solids, in addition to the familiar diffusion of individual atoms.

High-throughput screening of 2D van der Waals crystals with plastic deformability.

Inorganic semiconductors exhibit multifarious physical properties, but they are prevailingly brittle, impeding their application in flexible and hetero-shaped electronics. The exceptional plasticity discovered in InSe crystal indicates the existence of abundant plastically deformable two-dimensional van der Waals (2D vdW) materials, but the conventional trial-and-error method is too time-consuming and costly. Here we report on the discovery of tens of potential 2D chalcogenide crystals with plastic deformability using a nearly automated and efficient high-throughput screening methodology. Seven candidates e.g., famous MoS2, GaSe, and SnSe2 2D materials are carefully verified to show largely anisotropic plastic deformations, which are contributed by both interlayer and cross-layer slips involving continuous breaking and reconstruction of chemical interactions. The plasticity becomes a new facet of 2D materials for deformable or flexible electronics.

Designing Inorganic Semiconductors with Cold-Rolling Processability.

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single-crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å-2 , respectively. The findings open a new realm of possibility for alloy selection and design toward processing-friendly group-III chalcogenides for practical applications.

Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe.

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

Ceramic nanowelding.

Ceramics possess high temperature resistance, extreme hardness, high chemical inertness and a lower density compared to metals, but there is currently no technology that can produce satisfactory joints in ceramic parts and preserve the excellent properties of the material. The lack of suitable joining techniques for ceramics is thus a major road block for their wider applications. Herein we report a technology to weld ceramic nanowires, with the mechanical strength of the weld stronger than that of the pristine nanowires. Using an advanced aberration-corrected environmental transmission electron microscope (ETEM) under a CO2 environment, we achieved ceramic nanowelding through the chemical reaction MgO + CO2 → MgCO3 by using porous MgO as the solder. We conducted not only nanowelding on MgO, CuO, and V2O5 nanowires and successfully tested them in tension, but also macroscopic welding on a ceramic material such as SiO2, indicating the application potential of this technology in bottom-up ceramic tools and devices.

Turning a native or corroded Mg alloy surface into an anti-corrosion coating in excited CO2.

Despite their energy-efficient merits as promising light-weight structural materials, magnesium (Mg) based alloys suffer from inadequate corrosion resistance. One primary reason is that the native surface film on Mg formed in air mainly consists of Mg(OH)2 and MgO, which is porous and unprotective, especially in humid environments. Here, we demonstrate an environmentally benign method to grow a protective film on the surface of Mg/Mg alloy samples at room temperature, via a direct reaction of already-existing surface film with excited CO2. Moreover, for samples that have been corroded obviously on surface, the corrosion products can be converted directly to create a new protective surface. Mechanical tests show that compared with untreated samples, the protective layer can elevate the yield stress, suppress plastic instability and prolong compressive strains without peeling off from the metal surface. This environmentally friendly surface treatment method is promising to protect Mg alloys, including those already-corroded on the surface.