Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.

Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer-scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h-BN composite buffer layer and its application in flexible InGaN-based light-emitting diodes (LEDs) is demonstrated. Guided by first-principles calculations, the nucleation and bonding mechanism of GaN and AlN on h-BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2 -plasma-treated h-BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high-temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain-relaxation model for III-nitrides on h-BN is proposed. Eventually, the mechanical exfoliation of single-crystalline GaN film and LED through weak interaction between multilayer h-BN is realized. The flexible free-standing thin-film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

Atomic-Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD.

The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal-organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion during the growth. It is found that at the initial growth stage, the interface favors the nitrogen-polarity, rather than the widely accepted metal-polarity or randomly coexisting. However, the polarity subsequently converts into the metal-polar situation, at first locally then expanding into the whole area, driven by the anisotropy of surface energies, which results in universally existing inherent inverse grain boundaries. Furthermore, vertical two-dimensional electron accumulation originating from the lattice symmetry breaking at the inverse grain boundary is first revealed. This work identifies another cause of high-density defects in nitride epilayers, besides lattice mismatch induced dislocations. These findings also offer new insights into atomic structure and determination mechanism of polarity in nitrides, providing clues for its manipulation toward the novel hetero-polarity devices.

Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.

Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS2 -glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.

Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction.

Versatile applications have driven a desire for dual-band detection that enables seeing objects in multiple wavebands through a single photodetector. In this paper, a concept of using graphene/p-GaN Schottky heterojunction on top of a regular AlGaN-based p-i-n mesa photodiode is reported for achieving solar-/visible-blind dual-band (275 nm and 365 nm) ultraviolet photodetector with high performance. The highly transparent graphene in the front side and the polished sapphire substrate at the back side allows both top illumination and back illumination for the dual band detection. A system limit dark current of 1×10-9 A/cm2 at a negative bias voltage up to -10 V has been achieved, while the maximum detectivity obtained from the detection wavebands of interests at 275 nm and 365 nm are ∼ 9.0 ×1012 cm·Hz1/2/W at -7.5 V and ∼8.0 × 1011 cm·Hz1/2/W at +10 V, respectively. Interestingly, this new type of photodetector is dual-functional, capable of working as either photodiode or photoconductor, when switched by simply adjusting the regimes of bias voltage applied on the devices. By selecting proper bias, the device operation mode would switch between a high-speed photodiode and a high-gain photoconductor. The device exhibits a minimum rise time of ∼210 µs when working as a photodiode and a maximum responsivity of 300 A/W at 6 µW/cm2 when working as a photoconductor. This dual band and multi-functional design would greatly extend the utility of detectors based on nitrides.

Self-powered asymmetric metal-semiconductor-metal AlN deep ultraviolet detector.

Self-powered ultraviolet detectors may find application in aviation and military fields. Here we demonstrate a self-powered asymmetric metal-semiconductor-metal (MSM) deep ultraviolet (DUV) detector with an Ni/Al electrode contact to AlN, and a photoelectric response current increase from dark current (Id) 2.6 × 10-12 A to 1.0 × 10-10 A after UV illumination (Ip) at 0 V bias. To further improve device performance, trenches are etched in AlN, and the Ni/Al electrodes are deposited in trenches to form a three-dimensional MSM (3D-MSM) structure. The improved performance is attributed to the stronger electric field from the asymmetric electrode and a shorter carrier migration path from the 3D-MSM device configuration. Our work will promote the development and application of DUV self-powered devices.

Fundamental linewidth of an AlN microcavity Raman laser.

Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.

Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films.

The nitride films with high indium (In) composition play a crucial role in the fabrication of In-rich InGaN-based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain-modulated growth method, namely the graphene (Gr)-nanorod (NR) enhanced quasi-van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in-plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small-sized cyan light-emitting diodes of 7 × 9 mil2 are demonstrated. These findings provide an efficient approach for the growth of In-rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.

Self-frequency shift of AlN-on-sapphire Kerr solitons.

We study the self-frequency shift of continuously pumped Kerr solitons in AlN-on-sapphire microcavities with Raman gain bandwidths narrower than the cavity free-spectral range. Solitons are generated in ∼230GHz microcavities via high-order mode dispersion engineering. The dependence of the self-frequency shift on soliton pulse width is measured and differs from amorphous material microcavities. Our measurement and simulation reveal the impact of frequency detuning between the cavity resonances and Raman gain peaks, as well as the importance of all three Raman gain peaks. The interplay between the Raman effect and dispersive wave recoil and a potential quiet point are also observed.

Multiplexing multifoci optical metasurfaces for information encoding in the ultraviolet spectrum.

Recently, optical metasurfaces have attracted much attention due to their versatile features in manipulating phase, polarization, and amplitude of both reflected and transmitted light. Because it controls over four degrees of freedom: phase, polarization, amplitude, and wavelength of light wavefronts, optical cryptography is a promising technology in information security. So far, information encoding can be implemented by the metasurface in one-dimensional (1D) mode (either wavelength or polarization) and in a two-dimensional (2D) mode of both wavelength and polarization. Here, we demonstrate multiplexing multifoci optical metasurfaces for information encoding in the ultraviolet spectrum both in the 1D and 2D modes in the spatial zone, composed of high-aspect-ratio aluminum nitride nanorods, which introduce discontinuous phases through the Pancharatnam-Berry phase to realize multifoci in the spatial zone. Since the multiplexed multifocal optical metasurfaces are sensitive to the helicity of the incident light and the wavelength is within the ultraviolet spectrum, the security of the information encrypted by it would be guaranteed.

Ultraviolet to mid-infrared supercontinuum generation in single-crystalline aluminum nitride waveguides.

We demonstrate ultrabroadband supercontinuum generation from ultraviolet to mid-infrared wavelengths in single-crystalline aluminum nitride waveguides. Tunable dispersive waves are observed at the mid-infrared regime by precisely controlling the waveguide widths. In addition, ultraviolet light is generated through cascaded second-harmonic generation in the modal phase-matched waveguides. Numerical simulation indicates a high degree of coherence of the generated spectrum at around the telecom pump and two dispersive waves. Our results establish a reliable path for multiple octave supercontinuum comb generation in single-crystalline aluminum nitride to enable applications including precision frequency metrology and spectroscopy.

Ultrawide bandgap AlN metasurfaces for ultraviolet focusing and routing.

All-dielectric metasurfaces offer a promising way to control amplitude, polarization, and phase of light. However, ultraviolet (UV) component metasurfaces are rarely reported due to significant absorption loss for most dielectric materials and the required smaller footprint or feature size. Here, we demonstrate broadband UV focusing and routing in both transmission and reflection modes in simulations by adopting aluminum nitride (AlN) with ultrawide bandgap and a waveplate metasurface structure. As for experiments, the on-axis, off-axis focusing characteristics in transmission mode have been investigated at representative UVA (375 nm) wavelength for the first time, to the best of our knowledge. Furthermore, we fabricated a UV transmission router for monowavelength, guiding UV light to the designated different spatial positions of the same or different focal planes. Our work is meaningful for the development of UV photonics components and devices and would facilitate the integration and miniaturization of UV nanophotonics.

Three-dimensional metal-semiconductor-metal AlN deep-ultraviolet detector.

Conventional metal-semiconductor-metal (MSM) ultraviolet (UV) detectors have the disadvantage of limited adjustable structural parameters, finite electrical field, and long carrier path. In this Letter, we demonstrate a three-dimensional (3D) MSM structural AlN-based deep-UV (DUV) detector, fabricated through simple trench etching and metal deposition, while flip bonding to the silicon substrate forms a flip-chip 3D-MSM (FC-3DMSM) device. 3D-MSM devices exhibit improved responsiveness and response speed, compared with conventional MSM devices. Time-dependent photoresponse of all devices is also investigated here. The enhanced performance of the 3D-MSM device is to be attributed to the intensified electrical field from the 3D metal electrode configuration and the inhibition of the carrier vertical transport, which unambiguously increases the carrier collection efficiency and migration speed, and thus the responsivity and speed as well. This work should advance the design and fabrication of AlN-based DUV detectors.

Design of AlN ultraviolet metasurface for single-/multi-plane holography.

The metasurface promises an unprecedented way for manipulating wavefronts and has strengths in large information capacity for the hologram. However, strong absorption loss for most dielectric materials hinders the realization of such a metasurface operating in the ultraviolet (UV) spectrum. Herein, aluminum nitride (AlN) with an ultrawide bandgap has been utilized as the material of the UV metasurface for multi-plane holography, increasing the information capacity and security level of information storage simultaneously. The metasurface for multi-plane holography achieving a correlation coefficient of over 0.8 with three reconstructed images has been investigated, and also the single-plane holography at an efficiency of 34.05%. Our work might provide potential application in UV nanophotonics.

Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.

Here, we demonstrate the growth of horizontal GaN nanowires (NWs) on silicon (111) by a surface-directed vapor-liquid-solid growth. The influence of the Au/Ni catalysts migration and coalescence on the growth of the NWs has been systematically studied. 2D root-like branched NWs were gown spontaneously through catalyst migration. Furthermore, a novel phenomenon that a catalyst particle is embedded in a horizontal NW was observed and attributed the destruction of growth steady state due to the catalysts coalescence. The transmission electron microscopy and photoluminescence, cathodoluminescence measurement demonstrated that the horizontal NWs exhibit single crystalline structures and good optical properties. Our work sheds light on the horizontal NWs growth and should facilitate the development of highly integrated III-V nanodevices on silicon.

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.

We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.

High-fidelity cavity soliton generation in crystalline AlN micro-ring resonators.

Chip-scale mode-locked dissipative Kerr solitons have been realized on various materials platforms, making it possible to achieve a miniature, highly coherent frequency comb source with high repetition rates. Aluminum nitride (AlN), an appealing nonlinear optical material having both Kerr (χ3), and Pockels (χ2) effects, has immerse potential for comb self-referencing without the need for external harmonic generators. However, cavity soliton states have not yet been achieved in AlN microresonators. Here, we demonstrate mode-locked Kerr cavity soliton generation in a crystalline AlN microring resonator. By utilizing ultrafast tuning of the pump frequency through single-sideband modulation, in combination with an optimized wavelength scan and pump power-ramp patterns, we can deterministically elongate a ∼400 ns short-lived soliton to a time span as long as we wish to hold it.

Aluminum nitride-on-sapphire platform for integrated high-Q microresonators.

We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ~2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ~2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ~0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation.

A demonstration of ultraviolet-B (UVB) communication link is implemented utilizing quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM). The demonstration is based on a 294-nm UVB-light-emitting-diode (UVB-LED) with a full-width at half-maximum (FWHM) of 9 nm and light output power of 190 µW, at 7 V, with a special silica gel lens on top of it. A -3-dB bandwidth of 29 MHz was measured and a high-speed near-solar-blind communication link with a data rate of 71 Mbit/s was achieved using 8-QAM-OFDM at perfect alignment. 23.6 Mbit/s using 2-QAM-OFDM when the angle subtended by the pointing directions of the UVB-LED and photodetector (PD) is 12 degrees, thus establishing a diffuse-line-of-sight (LOS) link. The measured bit-error rate (BER) of 2.8 ×10-4 and 2.4 ×10-4, respectively, are well below the forward error correction (FEC) criterion of 3.8 ×10-3. The demonstrated high data-rate OFDM-based UVB communication link paves the way for realizing high-speed non-line-of-sight free-space optical communications.

Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring.

An all-optically tunable microwave photonic phase shifter is demonstrated based on an epitaxial aluminum nitride (AlN) microring with an intrinsic quality factor of 3.2×106. The microring adopts a pedestal structure, which allows overcoupling with 700 nm gap size and facilitates the fabrication process. A phase shift for broadband signals from 4 to 25 GHz is demonstrated by employing the thermo-optic effect and the separate carrier tuning technique. A phase tuning range of 0°-332° is recorded with a 3 dB radio frequency (RF) power variation and 48 mW optical power consumption. In addition, AlN exhibits intrinsic second-order optical nonlinearity. Thus, our work presents a novel platform with a low propagation loss and the capability of electro-optic modulation for applications in integrated microwave photonics.

Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser.

We demonstrated stimulated emission at 288 nm from a silicon-doped AlGaN-based multiple-quantum-well (MQW) ultraviolet (UV) laser grown on sapphire. The optical pumping threshold energy density of the UV laser was 64 mJ/cm2, while lasing behavior was not observed in undoped AlGaN MQWs. This means silicon doping could effectively reduce the lasing threshold of UV lasers, and the mechanism was studied showing that the silicon-doped AlGaN MQWs had a 41% higher internal quantum efficiency (IQE) compared with the undoped one. The transmission electron microscopy characterization showed that silicon doping explicitly improved the crystallographic quality of MQWs. Calculation of the polarization charge in the MQWs further revealed that the advantage of better structure quality outweighed the reduction of internal polarization field by Si doping for the IQE enhancement and successful stimulated emission.