RESUMO
We report a new approach for realizing a flexible photonic crystal (PC) cavity that enables wide-range tuning of its resonance frequency. Our PC cavity consists of a regular array of silicon nanowires embedded in a polydimethylsiloxane (PDMS) matrix and exhibits a cavity resonance in the telecommunication band that can be reversibly tuned over 60 nm via mechanical stretching-a record for two-dimensional (2D) PC structures. These mechanically reconfigurable devices could find potential applications in integrated photonics, sensing in biological systems, and smart materials.
RESUMO
We propose and demonstrate a new approach for achieving enhanced light-matter interactions with quantum emitters. Our approach makes use of a plasmon resonator composed of defect-free, highly crystalline silver nanowires surrounded by patterned dielectric distributed Bragg reflectors. These resonators have an effective mode volume (V(eff)) 2 orders of magnitude below the diffraction limit and a quality factor (Q) approaching 100, enabling enhancement of spontaneous emission rates by a factor exceeding 75 at the cavity resonance. We also show that these resonators can be used to convert a broadband quantum emitter to a narrow-band single-photon source with color-selective emission enhancement.
RESUMO
We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near the position of the EL spot, while the band profile obtained from scanning photocurrent microscopy indicates the existence of an n-type Schottky barrier at the interface. These observations indicate that light emission occurs through a hole leakage or an inelastic scattering induced by the rapid potential drop at the nanowire-electrode interface.