Pulsed hydraulic-pressure-responsive self-cleaning membrane.

Pressure-driven membranes is a widely used separation technology in a range of industries, such as water purification, bioprocessing, food processing and chemical production1,2. Despite their numerous advantages, such as modular design and minimal footprint, inevitable membrane fouling is the key challenge in most practical applications3. Fouling limits membrane performance by reducing permeate flux or increasing pressure requirements, which results in higher energetic operation and maintenance costs4-7. Here we report a hydraulic-pressure-responsive membrane (PiezoMem) to transform pressure pulses into electroactive responses for in situ self-cleaning. A transient hydraulic pressure fluctuation across the membrane results in generation of current pulses and rapid voltage oscillations (peak, +5.0/-3.2 V) capable of foulant degradation and repulsion without the need for supplementary chemical cleaning agents, secondary waste disposal or further external stimuli3,8-13. PiezoMem showed broad-spectrum antifouling action towards a range of membrane foulants, including organic molecules, oil droplets, proteins, bacteria and inorganic colloids, through reactive oxygen species (ROS) production and dielectrophoretic repulsion.

One-Stone-For-Three-Birds Strategy Using a Fullerene Modifier for Efficient and Stable Inverted Perovskite Solar Cells.

The electron extraction from perovskite/C60 interface plays a crucial role in influencing the photovoltaic performance of inverted perovskite solar cells (PSCs). Here, we develop a one-stone-for-three-birds strategy via employing a novel fullerene derivative bearing triple methyl acrylate groups (denoted as C60-TMA) as a multifunctional interfacial layer to optimize electron extraction at the perovskite/C60 interface. It is found that the C60-TMA not only passivates surface defects of perovskite via coordination interactions between C=O groups and Pb2+ cations but also bridge electron transfer between perovskite and C60. Moreover, it effectively induces the secondary grain growth of the perovskite film through strong bonding effect, and this phenomenon has never been observed in prior art reports on fullerene related studies. The combination of the above three upgrades enables improved perovskite film quality with increased grain size and enhanced crystallinity. With these advantages, C60-TMA treated PSC devices exhibit a much higher power conversion efficiency (PCE) of 24.89% than the control devices (23.66%). Besides, C60-TMA benefits improved thermal stability of PSC devices, retaining over 90% of its initial efficiency after aging at 85 °C for 1200 h, primarily due to the reinforced interfacial interactions and improved perovskite film quality.

Structural Distortion-Modulated Magnetic and Dielectric Properties in Nonstoichiometric Yb2-xTi2O7-δ Pyrochlore.

Rare-earth titanate pyrochlores have attracted considerable attention for their unique magnetic frustration. Among those compounds, Yb2Ti2O7, a candidate for quantum spin ice, has been extensively studied in its magnetic ground state. However, works on its dielectric property and structure-property relationship lag far more behind. Here, by preparing and investigating nonstoichiometric Yb2-xTi2O7-δ (x = 0-0.15) ceramics, we demonstrate that the samples with x ≤ 0.05 maintain a single-pyrochlore phase, but the nonstoichiometry arouses significant structural distortion and increased oxygen vacancy. As a result, the ferromagnetism, indicated by a positive Curie-Weiss temperature, decreases almost linearly with increasing x value. Remarkably composition-dependent low-temperature dielectric relaxations have been observed. In addition, through introducing nonstoichiometry, the relaxor degree of dielectric behavior is enhanced, and the dielectric curve shows an altered shape. The origin of this dielectric relaxation is attributed to the increased structural distortion reflected by the changed bond length/angle, since there is no phase transition in 90-300 K. Our work gives a comprehensive view on the structural, magnetic, and dielectric properties of Yb2Ti2O7, which is instructive for further work on pyrochlores.

Zero Thermal Expansion in Magnetic and Metallic Tb(Co,Fe)2 Intermetallic Compounds.

Due to the advantage of invariable length with temperatures, zero thermal expansion (ZTE) materials are intriguing but very rare especially for the metals based compounds. Here, we report a ZTE in the magnetic intermetallic compounds of Tb(Co,Fe)2 over a wide temperature range (123-307 K). A negligible coefficient of thermal expansion (αl = 0.48 × 10-6 K-1) has been found in Tb(Co1.9Fe0.1). Tb(Co,Fe)2 exhibits ferrimagnetic structure, in which the moments of Tb and Co/Fe are antiparallel alignment along the c axis. The intriguing ZTE property of Tb(Co,Fe)2 is formed due to the balance between the negative contribution from the Tb magnetic moment induced spontaneous magnetostriction and the positive role from the normal lattice expansion. The present ZTE intermetallic compounds are also featured by the advantages of wide temperature range, high electrical conductivity, and relatively high thermal conductivity.

Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism.

Photodetectors with two-dimensional (2D) materials on a SiO2/Si substrate have been extensively explored. However, these photodetectors often suffer from a large gate voltage and relatively low photoresponsivity due to the low efficiency light absorption of 2D materials. Here, we develop a MoS2 photodetector based on the Al2O3/ITO (indium tin oxide)/SiO2/Si substrate with ultrahigh photoresponsivity of 2.7 × 104 A W-1. Most of the incident light is reflected by the interface of stacked Al2O3/ITO/SiO2 substrate, which significantly increases the light absorption of 2D materials. With the help of thinner and high-κ Al2O3 dielectric, the current ON/OFF ratio could exceed 109 with a gate voltage no more than 2 V. Enhanced gate regulation also brings about a relatively high mobility of 84 cm2 V-1 s-1 and subthreshold swing of 104 mV dec-1. Additionally, two different photocurrent generation mechanisms have also been revealed by tuning the gate voltage. The reflection-enhancement substrate assisted MoS2 photodetector provides a new idea for improving the performance of 2D material photodetectors, which can be perfectly combined with other methods.

Enhanced photocatalytic efficiency of C3N4/BiFeO3 heterojunctions: the synergistic effects of band alignment and ferroelectricity.

As one of the most promising photocatalysts, graphitic carbon nitride (g-C3N4) shows a visible light response and great chemical stability. However, its relatively low photocatalytic efficiency is a major obstacle to actual applications. Here an effective and feasible method to dramatically increase the visible light photocatalytic efficiency by forming C3N4/BiFeO3 ferroelectric heterojunctions is reported, wherein the band alignment and piezo-/ferroelectricity have synergistic positive effects in accelerating the separation of the photogenerated carriers. At the optimum composition of 10 wt% BiFeO3, the heterojunction shows 1.4 times improved photocatalytic efficiency than that of the pure C3N4. Most importantly, mechanical pressing and electrical poling can also improve the photocatalytic efficiencies by 1.3 times and 1.8 times, respectively. The optimized photocatalytic efficiency is even comparable with that of some noble metal based compounds. These results not only prove the improved photocatalytic activity of the C3N4-ferroelectric heterojunctions, but also provide a new approach for designing high-performance photocatalysts by taking advantage of ferroelectricity.

Experimental Observation of Anisotropic Adler-Bell-Jackiw Anomaly in Type-II Weyl Semimetal WTe_{1.98} Crystals at the Quasiclassical Regime.

The asymmetric electron dispersion in type-II Weyl semimetal theoretically hosts anisotropic transport properties. Here, we observe the significant anisotropic Adler-Bell-Jackiw (ABJ) anomaly in the Fermi-level delicately adjusted WTe_{1.98} crystals. Quantitatively, C_{W}, a coefficient representing the intensity of the ABJ anomaly along the a and b axis of WTe_{1.98} are 0.030 and 0.051 T^{-2} at 2 K, respectively. We found that the temperature-sensitive ABJ anomaly is attributed to a topological phase transition from a type-II Weyl semimetal to a trivial semimetal, which is verified by a first-principles calculation using experimentally determined lattice parameters at different temperatures. Theoretical electrical transport study reveals that the observation of an anisotropic ABJ along both the a and b axes in WTe_{1.98} is attributed to electrical transport in the quasiclassical regime. Our work may suggest that electron-doped WTe_{2} is an ideal playground to explore the novel properties in type-II Weyl semimetals.

Formation mechanism of (001) oriented perovskite SrTiO3 microplatelets synthesized by topochemical microcrystal conversion.

To develop a better understanding of the mechanism responsible for topochemical microcrystal conversion (TMC) from Aurivillius SrBi4Ti4O15 precursors to perovskite SrTiO3 microplatelets, compositional/structural evolutions, morphological development, and reaction interface evolution of the (001) oriented SrBi4Ti4O15 microplatelets were investigated during the conversion process. The results show that multiple topotactic nucleation events of SrTiO3 occurred directly on the surfaces of SrBi4Ti4O15 above 700 °C, while reacting zones of intermediate phase(s) with less Bi(3+) contents were observed to form in the interior of SrBi4Ti4O15. Extensive exfoliation of the precursors occurred generally parallel to the (001) surfaces above 775 °C. At 950 °C, the original single-crystal SrBi4Ti4O15 platelet was replaced by a polycrystalline aggregate consisting of (001) aligned SrTiO3 crystallites and poorly crystallized intermediate phase(s). With further increasing the temperature or holding time, the SrTiO3 phase formed from related intermediate phase(s), and the aligned crystallites were sintered to form dense SrTiO3 with strong (001) orientation. The obtained SrTiO3 microplatelets preserved the shape of SrBi4Ti4O15 and show high chemical and phase purity. This TMC mechanism has general applicability to a variety of compounds and will be very useful for the design and synthesis of novel anisotropic perovskite crystals with high quality in the future.

Chemical composition-induced evolution of the structure, domain and electrical properties of Sm-doped (1 - x)Pb(Ni1/3Nb2/3)O3-xPbTiO3.

As the two typical basic binary solid solutions of the relaxor-PbTiO3 family, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) has been widely investigated, whereas Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) has not. Here, 1.5 mol% Sm-doped (1 - x)Pb(Ni1/3Nb2/3)O3-xPbTiO3, (1 - x)PNN-xPT:0.015Sm with x = 0.33-0.39, ceramics have been prepared and the chemical composition-induced evolution of crystal structure, domain, and electrical properties investigated systematically. With increasing PT content, evolution of the rhombohedral-tetragonal structure was observed. A rhombohedral-tetragonal morphotropic phase boundary occurred around x = 0.36-0.37, which showed a peak piezoelectric property with piezoelectric constant d33 = 531 pC N-1 and planar electromechanical coupling factor kp = 0.37 at room temperature. At the same time, the x = 0.36 composition showed improved ferroelectric behavior with remanent polarization Pr = 13.4 µC cm-2 and coercive field Ec = 3.2 kV cm-1. Interestingly, different from its PMN-PT counterpart, there is no temperature-driven phase transition between room temperature and the Curie temperature for (1 - x)PNN-xPT:0.015Sm. These parameters indicated that the PNN-PT system is worthy of more attention and is a promising platform for further development of high-performance piezo/ferroelectric materials.

Evolution of Ferroelectricity in Sr0.6Ba0.4Nb2O6-BaTiO3 Solid Solution with a Strong Electrocaloric Effect.

In conventional knowledge, ferroelectric solid solutions were formed between members belonging to the same crystal structure family. Since both tungsten bronze and perovskite structures are constructed by connecting the corner-sharing oxygen octahedra, it offers a possibility for formatting an unusual solid solution between these two families. Herein, (1 - x)Sr0.6Ba0.4Nb2O6-xBaTiO3, (1 - x)SBN-xBT, solid solutions were synthesized and the solution mechanism was resolved from a structure viewpoint. With increasing BT content, the solid solution persists of tetragonal tungsten bronze structure, but the lattice parameter a (= b) decreases whereas c increases, resulting in the significant reduction of grains anisotropy. The ferroelectric-relaxor phase transition temperature shows a monotonic increase as x increases. However, the ferroelectricity evolution is not monotonous as a function of BT content because of the competitive effects of Ba and Ti on the property. As a result, the x = 0.10 ceramic shows the strongest ferroelectricity and a remarkable electrocaloric effect of 1.4 K near room temperature. This work challenges the traditional view of solid solution formation and provides an alternative way to modulate the structure and properties of ferroelectrics.

Ultrahigh Energy Storage Density and High Efficiency in Lead-Free (Bi0.9Na0.1)(Fe0.8Ti0.2)O3-Modified NaNbO3 Ceramics via Stabilizing the Antiferroelectric Phase and Enhancing Relaxor Behavior.

Dielectric capacitors have attracted growing attention because of their important applications in advanced high power and/or pulsed power electronic devices. Nevertheless, the synergistic enhancement of recoverable energy storage density (Wrec > 10 J/cm3) and efficiency (η > 80%) is still a great challenge for lead-free dielectric bulk ceramics. Herein, by introducing complex perovskite compound (Bi0.9Na0.1)(Fe0.8Ti0.2)O3 with a smaller tolerance factor into an NaNbO3 matrix (NN-BNFT), we have achieved and explored stable relaxor antiferroelectric ceramics with enhanced relaxor behavior. Of particular importance is the composition of 0.88NN-0.12BNFT, which exhibits a large electric breakdown strength Eb of 87.3 kV/mm, an ultrahigh Wrec of 12.7 J/cm3, and a high efficiency η of 82.5%, as well as excellent thermal reliability and an ultrafast discharge speed, resulting from the dense microstructure, the moderate dielectric constant, the reduced grain size, the dielectric loss, and the sample thickness. The outstanding energy storage properties of NN-BNFT display great promise in advanced dielectric capacitors for energy storage applications.

Non-hydrostatic pressure-dependent structural and transport properties of BiCuSeO and BiCuSO single crystals.

High-pressure experiments usually expect a hydrostatic condition, in which the physical properties of materials can be easily understood by theoretical simulations. Unfortunately, non-hydrostatic effect is inevitable in experiments due to the solidification of the pressure transmitting media under high pressure. Resultantly, non-hydrostaticity affects the accuracy of the experimental data and sometimes even leads to false phenomena. Since the non-hydrostatic effect is extrinsic, it is quite hard to analyze quantitatively. Here, we have conducted high pressure experiments on the layered BiCuXO (X = S and Se) single crystals and quantitatively analyzed their pronounced non-hydrostatic effect by high throughput first-principles calculations and experimental Raman spectra. Our experiments find that the BiCuXO single crystals sustain the tetragonal structure up to 55 GPa (maximum pressure in our experiment). However, their pressure-dependent Raman shift and electric resistance show anomalous behaviors. Through optimization of thousands of crystal structures in the high throughput first-principles calculations, we have obtained the evolution of the lattice constants under external pressures, which clearly substantiates the non-hydrostatical pressure exerted in BiCuXO crystals. Our work indicates that the high throughput first-principles calculations could be a handy method to investigate the non-hydrostatic effect on the structural and electronic properties of materials in high pressure experiments.

Realizing a ferroelectric state and high pyroelectric performance in antiferroelectric-oxide composites.

We report a robust room temperature ferroelectric (FE) state in (1 - x)Pb0.99Nb0.02[(Zr0.57Sn0.43)0.933Ti0.067]0.98O3-xZnO ((1 - x)PNZST-xZnO) composites, where PNZST shows a predominant antiferroelectric (AFE) nature due to ZnO-induced internal strain. Upon heating, a FE-AFE transition occurs and generates high pyroelectric performance. The composite with x = 0.1 shows a peak pyroelectric coefficient of p = 2450.7 × 10-4 C m-2 K-1 and figures of merit of current responsivity Fi = 926.9 × 10-10 m V-1, voltage responsivity Fv = 1334.3 × 10-2 m2 C-1, and detectivity Fd = 1194.8 × 10-5 Pa-1/2, which are about two orders of magnitude higher than those of most perovskite pyroelectric oxides. More interestingly, the FE-AFE transition temperature, i.e., the temperature corresponding to peak pyroelectric performance, is tunable in a wide temperature range from 30 °C to 65 °C. This work not only provides a promising material candidate for high performance pyroelectric devices, but also an alternative idea to develop ferroelectric and pyroelectric properties based on antiferroelectric materials.

MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization.

Doped p-n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p-n junctions has fueled many carrier-type modulation methods, such as electrostatic doping, surface modification, and element intercalation. Here, by using the nonvolatile ferroelectric field polarized in the opposite direction, efficient carrier modulation in ambipolar molybdenum telluride (MoTe2 ) to form a p-n homojunction at the domain wall is demonstrated. The nonvolatile MoTe2 p-n junction can be converted to n-p, n-n, and p-p configurations by external gate voltage pulses. Both rectifier diodes exhibited excellent rectifying characteristics with a current on/off ratio of 5 × 105 . As a photodetector/photovoltaic, the device presents responsivity of 5 A W-1 , external quantum efficiency of 40%, specific detectivity of 3 × 1012 Jones, fast response time of 30 µs, and power conversion efficiency of 2.5% without any bias or gate voltages. The MoTe2 p-n junction presents an obvious short-wavelength infrared photoresponse at room temperature, complementing the current infrared photodetectors with the inadequacies of complementary metal-oxide-semiconductor incompatibility and cryogenic operation temperature.

Crossover from negative to positive magnetoresistance in Sr2CrWO6/Sr2Fe10/9Mo8/9O6 superlattices.

Sr2CrWO6/Sr2Fe10/9Mo8/9O6 (SCWO/SFMO) superlattices with 4, 6, 7, 10 periods (abbreviated as S-1, S-2, S-3, and S-4) were prepared on (0 0 1) SrTiO3 (STO) substrates by pulsed laser deposition. All superlattices show macroscopic ferromagnetic behavior, and the magnetization increases with increasing period. The S-1 superlattice demonstrates semiconductor-like temperature-dependent resistivity in the whole measuring temperature range and negative magnetoresistance of -5.3% at 2 K with 2 T magnetic field, while the other superlattices illustrate metallic behaviors and increasing positive magnetoresistance of 223.1%, 275.4%, and 766.1% under the same conditions. This work not only provides a feasible way to tune the MR effect in magnetic perovskite oxides, but also may stimulate further work on artificially micro-structured thin films with designable magnetic properties.

Significantly Enhanced Energy-Harvesting Performance and Superior Fatigue-Resistant Behavior in [001]c-Textured BaTiO3-Based Lead-Free Piezoceramics.

Energy-harvesting utilizing piezoelectric materials has recently attracted extensive attention due to the strong demand of self-powered electronics. Unfortunately, low power density and poor long-term stability seriously hinder the implementation of lead-free piezoelectrics as high-efficiency energy harvesters. For the first time, we demonstrate that tailoring grain orientations of lead-free ceramics via templated grain growth can effectively produce ultrahigh power generation performance and excellent endurance against electrical/mechanical fatigues. Significantly improved fatigue resistance was observed in (Ba0.94Ca0.06)(Ti0.95Zr0.05)O3 grain-oriented piezoceramics (with ∼99% [001]c texture) up to 106 bipolar cycles, attributed to the enhanced domain mobility, less defect accumulation, and thus suppressed crack generation/propagation. Interestingly, the novel energy harvesters, which were developed based on the textured ceramics with high electromechanical properties, possessed ∼9.8 times enhancement in output power density compared to the nontextured counterpart while maintaining stable output features up to 106 vibration cycles. The power densities, which increased from 6.4 to 93.6 µW/mm3 with increasing acceleration excitation from 10 to 50 m/s2, are much higher than those reported previously on lead-free energy harvesters. This work represents a significant advancement in piezoelectric energy-harvesting field and can provide guidelines for future efforts in this direction.

Exceptionally High Piezoelectric Coefficient and Low Strain Hysteresis in Grain-Oriented (Ba, Ca)(Ti, Zr)O3 through Integrating Crystallographic Texture and Domain Engineering.

Both low strain hysteresis and high piezoelectric performance are required for practical applications in precisely controlled piezoelectric devices and systems. Unfortunately, enhanced piezoelectric properties were usually obtained with the presence of a large strain hysteresis in BaTiO3 (BT)-based piezoceramics. In this work, we propose to integrate crystallographic texturing and domain engineering strategies into BT-based ceramics to resolve this challenge. [001]c grain-oriented (Ba0.94Ca0.06)(Ti0.95Zr0.05)O3 (BCTZ) ceramics with a texture degree as high as 98.6% were synthesized by templated grain growth. A very high piezoelectric coefficient (d33) of 755 pC/N, and an extremely large piezoelectric strain coefficient (d33* = 2027 pm/V) along with an ultralow strain hysteresis (Hs) of 4.1% were simultaneously achieved in BT-based systems for the first time, which are among the best values ever reported on both lead-free and lead-based piezoceramics. The exceptionally high piezoelectric response is mainly from the reversible contribution, and can be ascribed to the piezoelectric anisotropy, the favorable domain configuration, and the formation of smaller sized domains in the BCTZ textured ceramics. This study paves a new pathway to develop lead-free piezoelectrics with both low strain hysteresis and high piezoelectric coefficient. More importantly, it represents a very exciting discovery with potential application of BT-based ceramics in high-precision piezoelectric actuators.

Spin-Glass-Like Behavior and Topological Hall Effect in SrRuO3/SrIrO3 Superlattices for Oxide Spintronics Applications.

The heterostructure interface provides a powerful platform for exploring rich emergent phenomena, such as interfacial superconductivity and nontrivial topological surface states. Here, SrRuO3/SrIrO3 superlattices were epitaxially synthesized. The magnetic and magneto-transport properties of these superlattices were characterized. A broad cusp-type splitting in the zero-field-cooling/field-cooling temperature-dependent magnetization and magnetization relaxation, which follows the modified stretched function model, accompanied by double hysteresis magnetization loops were demonstrated. These physical effects were modulated by the SrIrO3 layer thickness, which confirms the coexistence of interfacial spin glass and ferromagnetic ordering in the superlattices. In addition, the topological Hall effect was observed at low temperatures, and it is weakened with the increase of the SrIrO3 layer thickness. These results suggest that a noncoplanar spin texture is generated at the SrRuO3/SrIrO3 interfaces because of the interfacial Dzyaloshinskii-Moriya interaction. This work demonstrates that SrIrO3 can effectively induce interfacial Dzyaloshinskii-Moriya interactions in superlattices, which would serve as a mechanism to develop spintronic devices with perovskite oxides.

The Microstructural Characterization of Multiferroic LaFeO3-YMnO3 Multilayers Grown on (001)- and (111)-SrTiO3 Substrates by Transmission Electron Microscopy.

The microstructure of multiferroic LaFeO3-YMnO3 (LFO-YMO) multilayers grown on (001)- and (111)-SrTiO3 substrates is characterized by the transmission electron microscopy (TEM). Detailed TEM characterization reveals that LFO-YMO multilayers grown on both substrates have clear layer-by-layer morphology and distinct chemical-composition layered structure. The most notable feature is that LFO-YMO multilayers grown on (001)-SrTiO3 substrate have three types of domains, while those on (111)-SrTiO3 have only one. The multi-/twin- domain structure can be qualitatively explained by the lattice mismatch in this system. The details of the domain structure of LFO-YMO multilayers are crucial to understanding their magnetic properties.

Giant positive magnetoresistance in half-metallic double-perovskite Sr2CrWO6 thin films.

Magnetoresistance (MR) is the magnetic field-induced change of electrical resistance. The MR effect not only has wide applications in hard drivers and sensors but also is a long-standing scientific issue for complex interactions. Ferromagnetic/ferrimagnetic oxides generally show negative MR due to the magnetic field-induced spin order. We report the unusually giant positive MR up to 17,200% (at 2 K and 7 T) in 12-nm Sr2CrWO6 thin films, which show metallic behavior with high carrier density of up to 2.26 × 1028 m-3 and high mobility of 5.66 × 104 cm2 V-1 s-1. The possible mechanism is that the external magnetic field suppresses the long-range antiferromagnetic order to form short-range antiferromagnetic fluctuations, which enhance electronic scattering and lead to the giant positive MR. The high mobility may also have contributions to the positive MR. These results not only experimentally confirm that the giant positive MR can be realized in oxides but also open up new opportunities for developing and understanding the giant positive MR in oxides.