Design and 3D Electrical Simulations for a Controllable Equal-Gap Large-Area Silicon Drift Detector.

In this study, a controllable equal-gap large-area silicon drift detector (L-SDD) is designed. The surface leakage current is reduced by reducing the SiO2-Si interface through the new controllable equal-gap design. The design of the equal gap also solves the problem whereby the gap widens due to the larger detector size in the previous SDD design, which leads to a large invalid area of the detector. In this paper, a spiral hexagonal equal-gap L-SDD of 1 cm radius is selected for design calculation, and we implement 3D modeling and simulation of the device. The simulation results show that the internal potential gradient distribution of the L-SDD is uniform and forms a drift electric field, with the direction of electron drift pointing towards the collecting anode. The L-SDD has an excellent electron drift channel inside, and this article also analyzes the electrical performance of the drift channel to verify the correctness of the design method of the L-SDD.

The effect of an annealing process on atomic layer deposited TiO2thin films.

In this paper, we study the property changes in TiO2thin films related to annealing under various conditions. XPS analysis showed that the concentration of oxygen vacancies in TiO2thin films was reduced by annealing. In the case of annealing in an O2and air atmosphere, the oxygen vacancy concentration was reduced to the greatest extent as oxygen diffused into the TiO2thin film and rearrangement of atoms occurred. XRD analysis showed that the anatase structure of annealed TiO2thin films was clearly present compared to the as-deposited TiO2thin film.I-Vanalysis showed that the lower the concentration of oxygen vacancy, the lower the leakage current (O2annealed TiO2: 10-4A cm-2) than as dep TiO2thin film (∼10-1A cm-2). The dielectric constant of annealed TiO2thin films was 26-30 which was higher than the as-deposited TiO2thin film (k âˆ¼ 18) because the anatase structure became more apparent.

High-Density Redox Amplified Coulostatic Discharge-Based Biosensor Array.

High-density biosensor arrays are essential for many cutting-edge biomedical applications including point-of-care vaccination screening to detect multiple highly-contagious diseases. Typical electrochemical biosensing techniques are based on the measurement of sub-pA currents for micron-sized sensors requiring highly-sensitive readout circuits. Such circuits are often too complex to scale down for high-density arrays. In this paper, a high-density 4,096-pixel electrochemical biosensor array in 180 nm CMOS is presented. It uses a coulostatic discharge sensing technique and interdigitated electrode geometry to reduce both the complexity and size of the readout circuitry. Each biopixel contains an interdigitated microelectrode with a 13 aA low-leakage readout circuit directly underneath. Compared to standard planar electrodes, the implemented interdigitated electrodes achieve a maximum amplification factor of 10.5× from redox cycling. The array's sensor density is comparable to state-of-the-art arrays, all without augmenting the sensors with complex post-processing. The detection of anti-Rubella and anti-Mumps antibodies in human serum is demonstrated.

Preparation of High-Performance Transparent Al2O3 Dielectric Films via Self-Exothermic Reaction Based on Solution Method and Applications.

As the competition intensifies in enhancing the integration and performance of integrated circuits, in accordance with the famous Moore's Law, higher performance and smaller size requirements are imposed on the dielectric layers in electronic devices. Compared to vacuum methods, the production cost of preparing dielectric layers via solution methods is lower, and the preparation cycle is shorter. This paper utilizes a low-temperature self-exothermic reaction based on the solution method to prepare high-performance Al2O3 dielectric thin films that are compatible with flexible substrates. In this paper, we first established two non-self-exothermic systems: one with pure aluminum nitrate and one with pure aluminum acetylacetonate. Additionally, we set up one self-exothermic system where aluminum nitrate and aluminum acetylacetonate were mixed in a 1:1 ratio. Tests revealed that the leakage current density and dielectric constant of the self-exothermic system devices were significantly optimized compared to the two non-self-exothermic system devices, indicating that the self-exothermic reaction can effectively improve the quality of the dielectric film. This paper further established two self-exothermic systems with aluminum nitrate and aluminum acetylacetonate mixed in 2:1 and 1:2 ratios, respectively, for comparison. The results indicate that as the proportion of aluminum nitrate increases, the overall dielectric performance of the devices improves. The best overall performance occurs when aluminum nitrate and aluminum acetylacetonate are mixed in a ratio of 2:1: The film surface is smooth without cracks; the surface roughness is 0.747 ± 0.045 nm; the visible light transmittance reaches up to 98%; on the basis of this film, MIM devices were fabricated, with tested leakage current density as low as 1.08 × 10-8 A/cm2 @1 MV and a relative dielectric constant as high as 8.61 ± 0.06, demonstrating excellent electrical performance.

A highly integrated nonvolatile bidirectional RFET with low leakage current.

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.

Highly-Integrated Hydraulic Smart Actuators and Smart Manifolds for High-Bandwidth Force Control.

Hydraulic actuation is the most widely used alternative to electric motors for legged robots and manipulators. It is often selected for its high power density, robustness and high-bandwidth control performance that allows the implementation of force/impedance control. Force control is crucial for robots that are in contact with the environment, since it enables the implementation of active impedance and whole body control that can lead to a better performance in known and unknown environments. This paper presents the hydraulic Integrated Smart Actuator (ISA) developed by Moog in collaboration with IIT, as well as smart manifolds for rotary hydraulic actuators. The ISA consists of an additive-manufactured body containing a hydraulic cylinder, servo valve, pressure/position/load/temperature sensing, overload protection and electronics for control and communication. The ISA v2 and ISA v5 have been specifically designed to fit into the legs of IIT's hydraulic quadruped robots HyQ and HyQ-REAL, respectively. The key features of these components tackle 3 of today's main challenges of hydraulic actuation for legged robots through: (1) built-in controllers running inside integrated electronics for high-performance control, (2) low-leakage servo valves for reduced energy losses, and (3) compactness thanks to metal additive manufacturing. The main contributions of this paper are the derivation of the representative dynamic models of these highly integrated hydraulic servo actuators, a control architecture that allows for high-bandwidth force control and their experimental validation with application-specific trajectories and tests. We believe that this is the first work that presents additive-manufactured, highly integrated hydraulic smart actuators for robotics.

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge2Sb2Te5) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor.

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO2 films by intentionally increasing the concentration of precursor. The ZrO2 films not only exhibit a low leakage current density of 10-6 A/cm² at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm²·V-1·s-1 and a Ion/Ioff ratio of 106 in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO2/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.

Switched-capacitor realization of presynaptic short-term-plasticity and stop-learning synapses in 28 nm CMOS.

Synaptic dynamics, such as long- and short-term plasticity, play an important role in the complexity and biological realism achievable when running neural networks on a neuromorphic IC. For example, they endow the IC with an ability to adapt and learn from its environment. In order to achieve the millisecond to second time constants required for these synaptic dynamics, analog subthreshold circuits are usually employed. However, due to process variation and leakage problems, it is almost impossible to port these types of circuits to modern sub-100nm technologies. In contrast, we present a neuromorphic system in a 28 nm CMOS process that employs switched capacitor (SC) circuits to implement 128 short term plasticity presynapses as well as 8192 stop-learning synapses. The neuromorphic system consumes an area of 0.36 mm(2) and runs at a power consumption of 1.9 mW. The circuit makes use of a technique for minimizing leakage effects allowing for real-time operation with time constants up to several seconds. Since we rely on SC techniques for all calculations, the system is composed of only generic mixed-signal building blocks. These generic building blocks make the system easy to port between technologies and the large digital circuit part inherent in an SC system benefits fully from technology scaling.