Manufacture and characterization of high Q-factor inductors based on CMOS-MEMS techniques.
Sensors (Basel)
; 11(10): 9798-806, 2011.
Article
em En
| MEDLINE
| ID: mdl-22163726
ABSTRACT
A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively.
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Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Óxidos
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Semicondutores
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Eletrônica
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Sistemas Microeletromecânicos
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Metais
Idioma:
En
Revista:
Sensors (Basel)
Ano de publicação:
2011
Tipo de documento:
Article
País de afiliação:
Taiwan