Time-evolution of the electrical characteristics of MoS<sub>2</sub> field-effect transistors after electron beam irradiation.

Lu, Ming-Yen; Wu, Shang-Chi; Wang, Hsiang-Chen; Lu, Ming-Pei

Time-evolution of the electrical characteristics of MoS₂ field-effect transistors after electron beam irradiation.

Lu, Ming-Yen; Wu, Shang-Chi; Wang, Hsiang-Chen; Lu, Ming-Pei.

Afiliação

Lu MY; Department of Materials Science and Engineering and High Entropy Materials Center, National Tsing Hua University, Hsinchu 300, Taiwan. mylu@mx.nthu.edu.tw.
Wu SC; Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, Taiwan.
Wang HC; Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, Taiwan.
Lu MP; National Nano Device Laboratories, Hsinchu 300, Taiwan.

Phys Chem Chem Phys ; 20(14): 9038-9044, 2018 Apr 04.

Article em En | MEDLINE | ID: mdl-29565083

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Taiwan

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