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Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO3.
Ou, Yongxi; Wang, Zhe; Chang, Celesta S; Nair, Hari P; Paik, Hanjong; Reynolds, Neal; Ralph, Daniel C; Muller, David A; Schlom, Darrell G; Buhrman, Robert A.
Afiliação
  • Ou Y; School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Wang Z; Department of Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Chang CS; School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Nair HP; School of Applied and Engineering Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Paik H; Department of Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Reynolds N; Department of Materials Science and Engineering , Cornell University , Ithaca , New York 14853 , United States.
  • Ralph DC; Department of Materials Science and Engineering , Cornell University , Ithaca , New York 14853 , United States.
  • Muller DA; Platform for the Accelerated Realization, Analysis, & Discovery of Interface Materials (PARADIM) , Cornell University , Ithaca , New York 14853 , United States.
  • Schlom DG; Department of Physics , Cornell University , Ithaca , New York 14853 , United States.
  • Buhrman RA; Department of Physics , Cornell University , Ithaca , New York 14853 , United States.
Nano Lett ; 19(6): 3663-3670, 2019 06 12.
Article em En | MEDLINE | ID: mdl-31046294
Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current due either to extrinsic spin-dependent, skew, or/and side-jump scattering or to intrinsic Berry curvature in the conduction bands. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature ( T)-dependent spin Hall conductivity σ SH, increasing with the electrical conductivity, consistent with expected behavior of the intrinsic effect in the "dirty metal" regime. σ SH is very high at low T, e.g., σ SH > (ℏ/2 e)3 × 105 Ω-1 m-1 at 60 K, and is largely unaffected by the SrRuO3 ferromagnetic transition at T c ≈ 150 K, which agrees with a recent theoretical determination that the intrinsic spin Hall effect is magnetization independent. Below T c smaller nonstandard SOT components also develop associated with the magnetism of the oxide. Our results are consistent with the degree of RuO6 octahedral tilt being correlated with the strength of the SOI in this complex oxide, as predicted by recent theoretical work on strontium iridate. These results establish SrRuO3 as a very promising candidate material for implementing strong spintronics functionalities in oxide electronics.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos