Manipulating the Ge Vacancies and Ge Precipitates through Cr Doping for Realizing the High-Performance GeTe Thermoelectric Material.

Shuai, Jing; Sun, Yang; Tan, Xiaojian; Mori, Takao

Shuai, Jing; Sun, Yang; Tan, Xiaojian; Mori, Takao.

Afiliação

Shuai J; WPI International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
Sun Y; School of Materials, Sun Yat-sen University, Guangzhou, 510275, China.
Tan X; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
Mori T; WPI International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.

Small ; 16(13): e1906921, 2020 Apr.

Article em En | MEDLINE | ID: mdl-32105400

Palavras-chave

Cr doping; Ge precipitations; Ge vacancies; thermal conductivity; thermoelectric materials; vacancy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Japão

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