Quantum simulation investigation of work-function variation in nanowire tunnel FETs.

Guan, Yunhe; Carrillo-Nuñez, Hamilton; Georgiev, Vihar P; Asenov, Asen; Liang, Feng; Li, Zunchao; Chen, Haifeng

Guan, Yunhe; Carrillo-Nuñez, Hamilton; Georgiev, Vihar P; Asenov, Asen; Liang, Feng; Li, Zunchao; Chen, Haifeng.

Afiliação

Guan Y; School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, Shaanxi, People's Republic of China.
Carrillo-Nuñez H; School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom.
Georgiev VP; School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom.
Asenov A; School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom.
Liang F; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China.
Li Z; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China.
Chen H; School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, Shaanxi, People's Republic of China.

Nanotechnology ; 32(15): 150001, 2021 Apr 09.

Article em En | MEDLINE | ID: mdl-33285530

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article