A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current.
Nano Lett
; 21(4): 1758-1764, 2021 Feb 24.
Article
em En
| MEDLINE
| ID: mdl-33565310
In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS2/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 µA·µm/µm (VDS = 1 V) with a current on/off ratio of 108, which shows potential for low-power and high-performance electronics applications.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2021
Tipo de documento:
Article
País de afiliação:
China