In Situ Implanting of Single Tungsten Sites into Defective UiO-66(Zr) by Solvent-Free Route for Efficient Oxidative Desulfurization at Room Temperature.

Ye, Gan; Wang, Hanlu; Chen, Wenxing; Chu, Hongqi; Wei, Jinshan; Wang, Dagang; Wang, Jin; Li, Yadong

Ye, Gan; Wang, Hanlu; Chen, Wenxing; Chu, Hongqi; Wei, Jinshan; Wang, Dagang; Wang, Jin; Li, Yadong.

Afiliação

Ye G; College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China.
Wang H; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
Chen W; College of Chemical Engineering, Guangdong University of, Petrochemical Technology, Maoming, 525000, China.
Chu H; Beijing Key Laboratory of Construction Tailorable Advanced, Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China.
Wei J; School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China.
Wang D; College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China.
Wang J; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
Li Y; College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China.

Angew Chem Int Ed Engl ; 60(37): 20318-20324, 2021 Sep 06.

Article em En | MEDLINE | ID: mdl-34121275

Palavras-chave

UiO-66(Zr); oxidative desulfurization; single site; solvent-free; tungsten

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

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