Data-driven RRAM device models using Kriging interpolation.

Hossen, Imtiaz; Anders, Mark A; Wang, Lin; Adam, Gina C

Hossen, Imtiaz; Anders, Mark A; Wang, Lin; Adam, Gina C.

Afiliação

Hossen I; Department of Electrical and Computer Engineering, The George Washington University, Washington, DC, 20052, USA.
Anders MA; National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Wang L; Department of Statistics, The George Washington University, Washington, DC, 20052, USA.
Adam GC; Department of Electrical and Computer Engineering, The George Washington University, Washington, DC, 20052, USA. ginaadam@gwu.edu.

Sci Rep ; 12(1): 5963, 2022 Apr 08.

Article em En | MEDLINE | ID: mdl-35396453

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google