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Observation of Ultrafast Interfacial Exciton Formation and Relaxation in Graphene/MoS2 Heterostructure.
Zou, Yuqing; Ma, Qiu-Shi; Zhang, Zeyu; Pu, Ruihua; Zhang, Wenjie; Suo, Peng; Sun, Kaiwen; Chen, Jiaming; Li, Di; Ma, Hong; Lin, Xian; Leng, Yuxin; Liu, Weimin; Du, Juan; Ma, Guohong.
Afiliação
  • Zou Y; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Ma QS; Department of Chemistry, Marquette University, Milwaukee, Wisconsin 53233, United States.
  • Zhang Z; State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai 201800, China.
  • Pu R; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Zhang W; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Suo P; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Sun K; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Chen J; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Li D; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Ma H; School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
  • Lin X; Department of Physics, Shanghai University, Shanghai 200444, China.
  • Leng Y; State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai 201800, China.
  • Liu W; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Du J; State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai 201800, China.
  • Ma G; Department of Physics, Shanghai University, Shanghai 200444, China.
J Phys Chem Lett ; : 5123-5130, 2022 Jun 03.
Article em En | MEDLINE | ID: mdl-35657644
ABSTRACT
Heterostructures constructed from graphene and transition metal dichalcogenides (TMDs) have established a new platform for optoelectronic applications. After a large number of studies, one intriguing debate is the existence of the interfacial exciton in graphene/TMDs. Hereby, by combined optical pump-terahertz probe spectroscopy and transient absorption spectroscopy, we report the observation of the interfacial exciton in graphene/MoS2 heterostructure. With the photon energy well below the band gap of monolayer MoS2, the hot electrons of graphene are transferred to MoS2 within 0.5 ps; subsequently, the relaxation of the holes in graphene and electrons in MoS2 shows an identical time scale of 15-18 ps, which manifests the formation and relaxation of the interfacial exciton in the heterostructure following photoexcitation. Moreover, a model of the carrier heating and photogating effect in graphene is proposed to estimate the amount of transferred charge, which agrees well with the experimental results. Our study provides insights into the dynamics of graphene-based heterostructure interfacial non-equilibrium carriers.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China