RESUMEN
We propose and demonstrate that temperature-dependent curve-fitting error values of the Schottky diode I-V curve in the forward regime can be an auxiliary diagnostic signal as the temperature-scan Capacitance DLTS (CDLTS) signals and helps to work time-efficiently with high accuracy when using the Laplace Transform (LT)-DLTS or Isothermal Capacitance transient spectroscopy (ICTS) method. Using Be-doped GaAs showing overlapping DLTS signals, we verify that the LT-DLTS or ICTS analysis within a specific temperature range around the characteristic temperature Tpeak coincides well with the results of the CDLTS and Fourier Transform DLTS performed within the whole temperature range. In particular, we found that the LT-DLTS signals appeared intensively around Tpeak, and we confirmed it with the ICTS result. The occurrence of the curve fitting error signal is attributed to the relatively increased misfit error by the increased thermal emission from the deep-level trap in the case near the Tpeak, because the applied transport model excludes defect characteristics.
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Veratrum spp. have traditionally been used in folk medicine to treat various pathologies. In this study, nine compounds, comprising one simple phenolic compound (1), three stilbenoids (2-4), and five flavonoids (5-9), were isolated from the aerial parts of Veratrum versicolor f. viride Nakai. The structures of these compounds were elucidated by spectroscopic analyses and comparison with reported data. Together, all reported compounds were isolated from V. versicolor f. viride for the first time in the study. Among them, two flavone aglycone tricetins (7 and 9) have never been isolated from the genus Veratrum or the family Melanthiaceae. The ethanol extract and isolated compounds were assessed for their inhibitory effects on elastase, tyrosinase, and melanin synthesis. Compounds 5 and 7 inhibited elastase (IC50: 292.25 ± 14.39 and 800.41 ± 5.86 µM, respectively), whereas compounds 2-5 inhibited tyrosinase with IC50 values in the range of 6.42 ~ 51.19 µM, respectively. In addition, compounds 3-6 and 8 exhibited dose-dependent inhibition (70.4% ~ 91.0%) of melanogenesis at a concentration of 100 µM.
RESUMEN
Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate that the MSA can perform unique facilities for the defect analysis by using its resolvable features for the carriers. Using two proven methods, we reveal that the defect state can be anticipated at the characteristic temperature Tdeep, in which the ratio (RNn/Nh) that is associated with the density of the minority carrier Nn, to the density of the majority carrier Nh, exceeds 50%. (1) Using a p-GaAs Schottky diode in a reverse bias regime, the position of the deep level transient spectroscopy (DLTS) peak is shown directly as the defect signal. (2) Furthermore, by examining the current-voltage-temperature (I-V-T) characteristics in the forward bias regime, this peak position has been indirectly revealed as the generation-recombination center. The DLTS signals are dominant around the Tdeep, according to the window rate, and it has been shown that the peak variation range is consistent with the temperature range of the temperature-dependent generation-recombination peak. The Tdeep is also consistent with the temperature-dependent thermionic emission peak position. By having only RNn/Nh through the MSA, it is possible to intuitively determine the existence and the peak position of the DLTS signal, and the majority carrier's density enables a more accurate extraction of the deep trap density in the DLTS analysis.
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We report the performance of a MoS2 Schottky diode on three-dimensional (3D) integral imaging. The MoS2 Schottky diode has asymmetric Pt electrodes for the Schottky contact and Ti/Au electrodes for the ohmic contact. Such a Schottky diode exhibits an excellent rectification ratio of 103, a broad spectral photoresponse in the 450-700â nm range, an almost ideal linearity of 1, and a wide linear dynamic range of 106â dB. We successfully conduct object pickup experiments using integral imaging and validate the feasibility of a single-pixel imager as a 3D image sensor.
RESUMEN
The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In0.52Al0.48As/In0.53Ga0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10-300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition amplitude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).
RESUMEN
Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10-5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.
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Germano-silicate glass fiber containing gold nanoparticles was developed by modified chemical vapor deposition and solution doping processes. Pumping with 488 nm Argon ion laser, we firstly report on the visible to infrared photoluminescence of the gold nanoparticles embedded in the core of the germano-silicate fibers. The surface plasmon resonance absorption peak at 498.4 nm and the visible to infrared photoluminescence over the range of 600 nm approximately 1560 nm were found and explained according to the interband and intraband electronic transitions of Au atoms. The averaged quantum efficiencies of the photoluminescence at 833 nm and 1536 nm were estimated to be 5.75 x 10(-8) and 2.01 x 10(-9), respectively.
RESUMEN
The antioxidant properties of heat-treated Hibiscus syriacus was investigated using DPPH test. The stems and the roots of Hibiscus syriacus were examined, respectively. As a result, the extracts of heat-treated Hibiscus syriacus at 100 degrees C for 24 h were more effective than those of non-treated Hibiscus syriacus in reducing the stable free radical 1,1-Dipheny 1-2-picrylhydrazyl (DPPH).
