Highly Reliable Performance of Flexible Synaptic Devices Based on PVP-GO QD Nanocomposites Due to the Formation of Directional Filaments.

The metallic conductive filament (CF) model, which serves as an important conduction mechanism for realizing synaptic functions in electronic devices, has gained recognition and is the subject of extensive research. However, the formation of CFs within the active layer is plagued by issues such as uncontrolled and random growth, which severely impacts the stability of the devices. Therefore, controlling the growth of CFs and improving the performance of the devices have become the focus of that research. Herein, a synaptic device based on polyvinylpyrrolidone (PVP)/graphene oxide quantum dot (GO QD) nanocomposites is proposed. Doping GO QDs in the PVP provides a large number of active centers for the reduction of silver ions, which allows, to a certain extent, the growth of CFs to be controlled. Because of this, the proposed device can simulate a variety of synaptic functions, including the transition from long-term potentiation to long-term depression, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and the behavior of the "learning experience". Furthermore, after being bent repeatedly, the devices were still able to simulate multiple synaptic functions accurately. Finally, the devices achieved a high recognition accuracy rate of 89.39% in the learning and inference tests, producing clear digit classification results.

Directional Formation of Conductive Filaments for a Reliable Organic-Based Artificial Synapse by Doping Molybdenum Disulfide Quantum Dots into a Polymer Matrix.

The conductive filament (CF) model, as an important means to realize synaptic functions, has received extensive attention and has been the subject of intense research. However, the random and uncontrollable growth of CFs seriously affects the performances of such devices. In this work, we prepared a neural synaptic device based on polyvinyl pyrrolidone-molybdenum disulfide quantum dot (MoS2 QD) nanocomposites. The doping with MoS2 QDs was found to control the growth mode of Ag CFs by providing active centers for the formation of Ag clusters, thus reducing the uncertainty surrounding the growth of Ag CFs. As a result, the device, with a low power consumption of 32.8 pJ/event, could be used to emulate a variety of synaptic functions, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation, post-tetanic potentiation, short-term memory to long-term memory conversion, and "learning experience" behavior. After having undergone consecutive stimulation with different numbers of pulses, the device stably realized a "multi-level LTP to LTD conversion" function. Moreover, the synaptic characteristics of the device experienced no degradation due to mechanical stress. Finally, the simulation result based on the synaptic characteristics of our devices achieved a high recognition accuracy of 91.77% in learning and inference tests and showed clear digital classification results.

Highly Self-Healable Write-Once-Read-Many-Times Devices Based on Polyvinylalcohol-Imidazole Modified Graphene Nanocomposites.

Repetitious mechanical stress or external mechanical impact can damage wearable electronic devices, leading to serious degradations in their electrical performances, which limits their applications. Because self-healing would be an excellent solution to the above-mentioned issue, this paper presents a self-healable memory device based on a novel nanocomposite layer consisting of a polyvinyl alcohol matrix and imidazole-modified graphene quantum dots. The device exhibits reliable electrical performance over 600 cycles, and the electrical properties of the device are maintained without any failure under this bending stress. Further, it is confirmed that the damaged device can recover its original electric characteristics after the self-healing process. It is believed that such outstanding results will lead the way to the realization of future wearable electronic systems.

Highly Stable and Flexible Memristive Devices Based on Polyvinylpyrrolidone: WS2 Quantum Dots.

Tungsten disulfide (WS2) quantum dots (QDs) embedded in polyvinylpyrrolidone (PVP) based flexible memristive devices were prepared, and those devices exhibited typical bistable electrical switching and remarkable nonvolatile memristive behaviors. Maximum electricity ON/OFF ratio obtained from the current-voltage (I-V) curves of the device is close to 104. The set voltage of the device is +0.7 V, which effectively reduced the energy consumption. The retention times extracted from data for the devices were as large as 1 × 104 s, which points to these devices having nonvolatile characteristics. Moreover, the highly flexible characteristics of the devices were demonstrated by bending the devices. The carrier transport mechanisms were explained by fitting the I-V curves, and possible operating mechanisms of the devices can be described based on the electron trapping and detrapping processes. WS2 QDs uniformly dispersed in pure transparent N, N-Dimethylformamide (DMF) were obtained by using ultrasonication and a hydrothermal process in this work.

Binary Electronic Synapses for Integrating Digital and Neuromorphic Computation in a Single Physical Platform.

As a promising advanced computation technology, the integration of digital computation with neuromorphic computation into a single physical platform holds the advantage of a precise, deterministic, fast data process as well as the advantage of a flexible, paralleled, fault-tolerant data process. Even though two-terminal memristive devices have been respectively proved as leading electronic elements for digital computation and neuromorphic computation, it is difficult to steadily maintain both sudden-state-change and gradual-state-change in a single device due to the entirely different operating mechanisms. In this work, we developed a digital-analog compatible memristive device, namely, binary electronic synapse, through realizing controllable cation drift in a memristive layer. The devices feature nonvolatile binary memory as well as artificial neuromorphic plasticity with high operation endurance. With strong nonlinearity in switching dynamics, binary switching, neuromorphic plasticity, two-dimension information store, and trainable memory can be implemented by a single device.

Highly flexible and stable resistive switching devices based on WS2 nanosheets:poly(methylmethacrylate) nanocomposites.

This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS2 nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS2 NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 104. The memristive device based on the WS2 NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 104 sec, and the number of endurance cycles was greater than 1 × 102. The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS2 NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.

Enhanced Triboelectric Nanogenerators Based on MoS2 Monolayer Nanocomposites Acting as Electron-Acceptor Layers.

As one of their major goals, researchers attempting to harvest mechanical energy efficiently have continuously sought ways to integrate mature technologies with cutting-edge designs to enhance the performances of triboelectric nanogenerators (TENGs). In this research, we introduced monolayer molybdenum-disulfide (MoS2) into the friction layer of a TENG as the triboelectric electron-acceptor layer in an attempt to dramatically enhance its output performance. As a proof of the concept, we fabricated a vertical contact-separation mode TENG containing monolayer MoS2 as an electron-acceptor layer and found that the TENG exhibited a peak power density as large as 25.7 W/m2, which is 120 times larger than that of the device without monolayer MoS2. The mechanisms behind the performance enhancement, which are related to the highly efficient capture of triboelectric electrons in monolayer MoS2, are discussed in detail. This study indicates that monolayer MoS2 can be used as a functional material for efficient energy harvesting.