RESUMEN
Low-cost fabric-based top-emitting polymer light-emitting devices (Fa-TPLEDs) have aroused increasing attention due to their remarkable potential applications in wearable displays. However, it is still challenging to realize efficient all-solution-processed devices from bottom electrodes to top electrodes with large-scale fabrication. Here, a smooth reflective Ag cathode integrated on fabric by one-step silver mirror reaction and a composite transparent anode of polydimethylsiloxane/silver nanowires/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) via a water-assisted peeling method are presented, both of which possess excellent optoelectrical properties and robust mechanical flexibility. The Fa-TPLEDs are constructed by spin-coating functional layers on the bottom reflective cathodes and laminating the top transparent anodes. The Fa-TPLEDs show a current efficiency of 16.3 cd A-1 , an external quantum efficiency of 4.9% and angle-independent electroluminescence spectra. In addition, the Fa-TPLEDs possess excellent mechanical stability, maintaining a current efficiency of 14.3 cd A-1 after 200 bending cycles at a radius of 4 mm. The results demonstrate that the integration of solution-processed reflective cathodes and transparent anodes sheds light on a new avenue to construct low-cost and efficient fabric-based devices, showing great potential applications in emerging smart flexible/wearable electronics.
RESUMEN
Inverted organic light-emitting diodes (IOLEDs) can be integrated with low-cost n-channel thin-film transistors for use in active-matrix OLEDs (AMOLEDs). However, the electron injection from conventional indium tin oxide (ITO) cathode to the upper electron transport layer usually suffers from a large injection barrier. To improve the electron injection efficiency, the electron injection layers (EILs) of ZnO modified by a self-assembled monolayer arginine (Arg) were developed to construct efficient IOLEDs. ZnO/Arg EILs present an ultralow work function (WF) of 2.35 eV, which is lower than that of ZnO modified by poly(ethylenimine) (PEI) (2.77 eV). The mechanism of low WF is attributed to the generation of strong molecular dipoles and interface dipoles at the interface of ZnO/Arg. The green fluorescent IOLEDs with ZnO/Arg present a low turn-on voltage (Von) of 3.5 V and a maximum current efficiency (CEmax) of 4.5 cd/A. Especially, the device possesses a half-life of 3600 h at an initial luminance of 1700 cd/m2, which is 36 times as long as that of the IOLEDs with ZnO/PEI as EILs. Furthermore, the green phosphorescent IOLEDs show a Von of 3.5 V, a CEmax of 59.1 cd/A, and a maximum external quantum efficiency (EQEmax) of 16.8%. At a luminance of 10â¯000 cd/m2, the efficiency roll-off of the device is only 6.3%.
