RESUMEN
A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso-position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin-coating resulted in diversely self-assembled films. Field-effect transistors were fabricated using bottom-gate/top-contact architecture (BGTC) by solution-processable technique. The higher charge carrier mobility of 5.17â cm2 /Vs with on/off of 106 was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p-channel OFET devices.
RESUMEN
Donor-Acceptor systems are highly appreciated in the field of organic memory devices due to their efficient charge transport within the systems. In this work, we have designed and synthesized a D-π-A system constituting ester-flanked quinolines and functionalized triarylamines (TAA) through a single-step cross-coupling reaction to fabricate memory devices via Write-Once Read-Many times (WORM) non-volatile memory. Structure-property relationships are reconnoitered for these conjugated D-π-A systems through a series of UV, fluorescence, XRD, DFT, and memory characterizations. The UV and CV data show efficient charge transfer with intramolecular charge transfer occurring at 407-417â nm and a short band gap of 2.56-2.65â eV. An enhancement in the resistive switching behavior of the memory devices is observed for the compounds with simple TAA-quinoline and tert-butylphenyl substituted TAA and fluorophenyl substituted quinoline due to balanced charge distribution in the compounds. This enhanced switching induces an on/off ratio of 103 by generating a highly ordered arrangement in the thin films. The HOMO, LUMO levels, and the ESP images together estimate a charge transfer and charge trapping as the plausible mechanism for the solution-processable WORM memory devices. The longer retention time (103 â s) and lower threshold voltages (-1.21--2.12â V) of the devices makes them intriguing compounds for memory applications.
RESUMEN
This study investigates the influence of aryl and ethynyl linkers as well the effect of various pi-end-groups on the performance of the quinoline-based organic field-effect transistors. A series of new functionalized quinolines with D-π-A-π-D and A-π-A-π-A architectures are designed and synthesized via the Sonagashira cross-coupling reaction. All the new compounds are well characterized and their photophysical properties are studied. The bottom gate-top contact-organic field-effect transistors devices are fabricated using the spin-coating technique. By employing the pre and post-annealing technique, films with uniform surface coverage are obtained. The variation in the end-groups results in versatile packing arrangements which determine their good charge transport properties. The p-channel transistor behavior is observed for all the new compounds. Among the molecules studied, methoxyphenyl and thiophen-2-yl terminal functionalized with D-π-A-π-D architecture exhibit the higher p-channel transistor characteristics with hole mobilities of 1.39 and 1.33 cm2 V-1 s-1 , respectively. The good charge carrier mobilities are supported by an electron-donating methoxy group and thiophene as the end-groups with high highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbitals (LUMO) levels, extensive π-conjugation, and better self-assembly.
