Electrochemically driven optical and SERS immunosensor for the detection of a therapeutic cardiac drug.

Cardiovascular diseases pose a serious health risk and have a high mortality rate of 31% worldwide. Digoxin is the most commonly prescribed pharmaceutical preparation to cardiovascular patients particularly in developing countries. The effectiveness of the drug critically depends on its presence in the therapeutic range (0.8-2.0 ng mL-1) in the patient's serum. We fabricated immunoassay chips based on QD photoluminescence (QDs-ELISA) and AuNP Surface Enhanced Raman Scattering (SERS-ELISA) phenomena to detect digoxin in the therapeutic range. Digoxin levels were monitored using digoxin antibodies conjugated to QDs and AuNPs employing the sandwich immunoassay format in both the chips. The limit of detection (LOD) achieved through QDs-ELISA and SERS-ELISA was 0.5 ng mL-1 and 0.4 ng mL-1, respectively. It is demonstrated that the sensitivity of QDs-ELISA was dependent on the charge transfer mechanism from the QDs to the antibody through ionic media, which was further explored using electrochemical impedance spectroscopy. We demonstrate that QDs-ELISA was relatively easy to fabricate compared to SERS-ELISA. The current study envisages replacement of conventional methodologies with small immunoassay chips using QDs and/or SERS-based tags with fast turnaround detection time as compared to conventional ELISA.

Study of Double Layer Indium Tin Oxide in Silicon Hetero-Junction Solar Cells.

In this literature, we discussed the effect of anti-reflection coating of silicon heterojunction (SHJ) solar cells with different characteristics of double layered indium tin oxide (ITO/ITO) structure. Firstly, the OPAL 2 simulation was performed to optimize the values of the photo generation-current density of ITO/ITO/Si device structures. Afterwards, experimental work was conducted by depositing ITO on the SHJ solar cell to analyze the anti-reflection coating effect. ITO was deposited on the SHJ solar cell for 90 to 180 seconds by varying the oxygen flow rate. The highest short-circuit current density of 39.25 mA/cm² was obtained when ITO was deposited for 150 seconds, which was higher than the short-circuit current density of non-deposited cell of ITO (38 mA/cm²). The efficiency of the SHJ solar cell increased by about 2% after additional ITO deposition to 20.75%, which was due to the improvement of short-circuit current density by ITO deposition. The double layer ITO helped to improve the efficiency of SHJ solar cell by increasing light absorption in a silicon wafer.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

Molybdenum disulfide (MoS2) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS2 deposited on p-Si establishes a built-in electric field at MoS2/Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al2O3-based passivation at the MoS2 surface to improve the photovoltaic performance of bulklike MoS2/Si solar cells. Interestingly, it was observed that Al2O3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS2-based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS2 films with Si-based electronics to develop highly efficient photovoltaic cells.