Tuning Surface Defect States in Sputtered Titanium Oxide Electron Transport Layers for Enhanced Stability of Organic Photovoltaics.

Nonfullerene acceptors (NFAs) have dramatically improved the power conversion efficiency (PCE) of organic photovoltaics (OPV) in recent years; however, their device stability currently remains a bottleneck for further technological progress. Photocatalytic decomposition of nonfullerene acceptor molecules at metal oxide electron transport layer (ETL) interfaces has in several recent reports been demonstrated as one of the main degradation mechanisms for these high-performing OPV devices. While some routes for mitigating such degradation effects have been proposed, e.g., through a second layer integrated on the ETL surface, no clear strategy that complies with device scale-up and application requirements has been presented to date. In this work, it is demonstrated that the development of sputtered titanium oxide layers as ETLs in nonfullerene acceptor based OPV can lead to significantly enhanced device lifetimes. This is achieved by tuning the concentration of defect states at the oxide surface, via the reactive sputtering process, to mitigate the photocatalytic decomposition of NFA molecules at the metal oxide interlayers. Reduced defect state formation at the oxide surface is confirmed through X-ray photoelectron spectroscopy (XPS) studies, while the reduced photocatalytic decomposition of nonfullerene acceptor molecules is confirmed via optical spectroscopy investigations. The PBDB-T:ITIC organic solar cells show power conversion efficiencies of around 10% and significantly enhanced photostability. This is achieved through a reactive sputtering process that is fully scalable and industry compatible.

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin.

The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of ∼2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: C2CB, C2CN, and VNCB. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy ∼170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.

Molybdenum Disulfide Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity.

MoS2 nanoribbons have attracted increased interest due to their properties, which can be tailored by tuning their dimensions. Herein, the growth of MoS2 nanoribbons and triangular crystals formed by the reaction between films of MoOx (2

A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors.

Chemical vapor deposition (CVD) has been established as a versatile route for the large-scale synthesis of transition metal dichalcogenides, such as tungsten disulfide (WS2). Yet, the precursor composition's role on the CVD process remains largely unknown and remains to be explored. Here, we employ Pulsed Laser Deposition (PLD) in a two-stage approach to tune the oxygen content in the tungsten oxide (WO3-x) precursors and demonstrate the presence of oxygen vacancies in the oxide films leads to a more facile conversion from WO3-x to WS2. Using a joint study based on ab initio density functional theory (DFT) calculations and experimental observations, we unravel that the oxygen vacancies in WO3-x can serve as niches through which sulfur atoms enter the lattice and facilitate an efficient conversion into WS2 crystals. By solely modulating the precursor stoichiometry, the photoluminescence emission of WS2 crystals can be significantly enhanced. Atomic resolution scanning transmission electron microscopy imaging (STEM) reveals that tungsten vacancies are the dominant intrinsic defects in mono- and bilayers WS2. Moreover, bi- and multilayer WS2 crystals derived from oxides with a high V0 content exhibit dominant AA'/AB or AA(A…) stacking orientations. The atomic resolution images reveal local strain buildup in bilayer WS2 due to competing effects of complex grain boundaries. Our study provides means to tune the precursor composition to control the lateral growth of TMDs while revealing insights into the different pathways for forming grain boundaries in bilayer WS2.

Gettering in PolySi/SiOx Passivating Contacts Enables Si-Based Tandem Solar Cells with High Thermal and Contamination Resilience.

Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as the bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high-temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe), and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 °C, we show that increasing the heavily doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by 1 order of magnitude, with final lifetimes above 500 µs uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor.

Intrinsic Defects in MoS2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers.

Pulsed laser deposition (PLD) can be considered a powerful method for the growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) into van der Waals heterostructures. However, despite significant progress, the defects in 2D TMDs grown by PLD remain largely unknown and yet to be explored. Here, we combine atomic resolution images and first-principles calculations to reveal the atomic structure of defects, grains, and grain boundaries in mono- and bilayer MoS2 grown by PLD. We find that sulfur vacancies and MoS antisites are the predominant point defects in 2D MoS2. We predict that the aforementioned point defects are thermodynamically favorable under a Mo-rich/S-poor environment. The MoS2 monolayers are polycrystalline and feature nanometer size grains connected by a high density of grain boundaries. In particular, the coalescence of nanometer grains results in the formation of 180° mirror twin boundaries consisting of distinct 4- and 8-membered rings. We show that PLD synthesis of bilayer MoS2 results in various structural symmetries, including AA' and AB, but also turbostratic with characteristic moiré patterns. Moreover, we report on the experimental demonstration of an electron beam-driven transition between the AB and AA' stacking orientations in bilayer MoS2. These results provide a detailed insight into the atomic structure of monolayer MoS2 and the role of the grain boundaries on the growth of bilayer MoS2, which has importance for future applications in optoelectronics.

Spin-coated [Formula: see text] solar cells: A study on the transformation from ink to film.

In this paper, we study the DMSO/thiourea/chloride salt system for synthesis of pure-sulfide [Formula: see text] (CZTS) thin-film solar cells under ambient conditions. We map out the ink constituents and determine the effect of mixing time and filtering. The thermal behavior of the ink is analyzed, and we find that more than 90% of the solvent has evaporated at [Formula: see text]. However, chloride and sulfoxide species are released continually until [Formula: see text], suggesting the advantage of a higher pre-annealing temperature, which is also commonly observed in the spin-coating routines in literature. Another advantage of a higher pre-annealing temperature is that the worm-like pattern in the spin-coated film can be avoided. We hypothesize that this pattern forms as a result of hydrodynamics within the film as it dries, and it causes micro-inhomogeneities in film morphology. Devices were completed in order to finally evaluate the effect of varying thermal exposure during pre-annealing. Contrary to the previous observations, a lower pre-annealing temperature of [Formula: see text] results in the best device efficiency of 4.65%, which to the best of our knowledge is the highest efficiency obtained for a pure-sulfide kesterite made with DMSO. Lower thermal exposure during pre-annealing results in larger grains and a thicker [Formula: see text] layer at the CZTS/Mo interface. Devices completed at higher pre-annealing temperatures display the existence of either a Cu-S secondary phase or an incomplete sulfurization with smaller grains and a fine-grain layer at the back interface.

Energy band alignment at the heterointerface between CdS and Ag-alloyed CZTS.

Energy band alignment at the heterointerface between CdS and kesterite Cu2ZnSnS4 (CZTS) and its alloys plays a crucial role in determining the efficiency of the solar cells. Whereas Ag alloying of CZTS has been shown to reduce anti-site defects in the bulk and thus rise the efficiency, the electronic properties at the interface with the CdS buffer layer have not been extensively investigated. In this work, we present a detailed study on the band alignment between n-CdS and p-CZTS upon Ag alloying by depth-profiling ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). Our findings indicate that core-level peaks and the valence band edge of CdS exhibit a significant shift to a lower energy (larger than 0.4 eV) upon the etching of the CdS layer, which can be assigned due to band bending and chemical shift induced by a change in the chemical composition across the interface. Using a simplified model based on charge depletion layer conservation, a significantly larger total charge region depletion width was determined in Ag-alloyed CZTS as compared to its undoped counterpart. Our findings reveal a cliff-like band alignment at both CdS/CZTS and CdS/Ag-CZTS heterointerfaces. However, the conduction-band offset decreases by more than 0.1 eV upon Ag alloying of CZTS. The approach demonstrated here enables nanometer-scale depth profiling of the electronic structure of the p-n junction and can be universally applied to study entirely new platforms of oxide/chalcogenide heterostructures for next-generation optoelectronic devices.

Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Review.

In kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered - or double-layered - CZTSSe absorber. So far, only segregated pieces of research exist to characterize the appearance of this double layer, its formation dynamics, and its effect on the performances of devices. In this work, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition, and optoelectronic properties and complement the results with a large statistical data set of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 to 300 nm, we show that the double-layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the well-known case of ultrathin CIGS solar cells. We therefore attribute the improvements to the reduced double-layer occurrence and find that the double layer limits the efficiency of our devices to below 7%. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double-layer formation but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases in a self-regulating process akin to the Kirkendall effect. Finally, we comment on the generality of the mechanism proposed by comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide- and oxide-based targets. We find that although the double-layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double-layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix. We suggest that understanding the limitations imposed by the double-layer dynamics could prove useful to pave the way for breaking the 13% efficiency barrier for this technology.

Characterization of Cu2ZnSnS4 Particles Obtained by the Hot-Injection Method.

In the last decade, Cu2ZnSnS4 (CZTS) has been a promising earth-abundant, nontoxic candidate material for absorption layers within thin-film solar cells. One major issue preventing this type of solar cells from achieving competitive efficiency is impurity phases and structural defects in the bulk of the absorber; as a four-element compound, the formation of CZTS is highly sensitive to synthesis conditions. The impurity phases and defects differ by the fabrication method, and thus experimental characterization is vital for the successful development of CZTS photovoltaics. In this work, we characterize CZTS nanoparticles obtained by the hot-injection method and a standard N2/S annealing procedure. Phase-pure kesterite CZTS samples in the desired compositional range were characterized by standard means, i.e., Raman spectroscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. However, using synchrotron X-ray diffraction with Rietveld refinement, we show that the as-synthesized nanoparticles consist of a mixture of the tetragonal and the fully disordered cubic sphalerite phase and transform into the tetragonal structure after heat treatment. Sn vacancies are seen in the annealed samples. X-ray total scattering with pair distribution function analysis furthermore suggests the presence of a nanostructured CZTS phase along with a bulk material. Finally, this study compares the benefits of applying synchrotron radiation instead of a standard laboratory X-ray diffraction when characterizing highly complex materials.

Liquid phase assisted grain growth in Cu2ZnSnS4 nanoparticle thin films by alkali element incorporation.

The effect of adding LiCl, NaCl, and KCl to Cu2ZnSnS4 (CZTS) nanoparticle thin-film samples annealed in a nitrogen and sulfur atmosphere is reported. We demonstrate that the organic ligand-free nanoparticles previously developed can be used to produce an absorber layer of high quality. The films were Zn-rich and Cu-poor, and no secondary phases except ZnS could be detected within the detection limit of the characterization tools used. Potassium was the most effective alkali metal to enhance grain growth, and resulted in films with a high photoluminescence signal and an optical band gap of 1.43 eV. The alkali metals were introduced in the form of chloride salts, and a significant amount of Cl was detected in the final films, but could be removed in a quick water rinse.

Interfacial structure and photocatalytic activity of magnetron sputtered TiO2 on conducting metal substrates.

The photocatalytic behavior of magnetron sputtered anatase TiO2 coatings on copper, nickel, and gold was investigated with the aim of understanding the effect of the metallic substrate and coating-substrate interface structure. Stoichiometry and nanoscale structure of the coating were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscope, and scanning and transmission electron microscopy. Photocatalytic behavior of the coating was explored by using optical spectrophotometry and electrochemical methods via photovoltage, photocurrent, and scanning kelvin probe microscopy measurements. The nature of the metal substrate and coating-substrate interface had profound influence on the photocatalytic behavior. Less photon energy was required for TiO2 excitation on a nickel substrate, whereas TiO2 coating on copper showed a higher band gap attributed to quantum confinement. However, the TiO2 coating on gold exhibited behavior typical of facile transfer of electrons to and from the CB, therefore requiring only a small amount of photon energy to make the TiO2 coating conductive.

Detection of negative ions in glow discharge mass spectrometry for analysis of solid specimens.

A new method is presented for elemental and molecular analysis of halogen-containing samples by glow discharge time-of-flight mass spectrometry, consisting of detection of negative ions from a pulsed RF glow discharge in argon. Analyte signals are mainly extracted from the afterglow regime of the discharge, where the cross section for electron attachment increases. The formation of negative ions from sputtering of metals and metal oxides is compared with that for positive ions. It is shown that the negative ion signals of F(-) and TaO(2)F(-) are enhanced relative to positive ion signals and can be used to study the distribution of a tantalum fluoride layer within the anodized tantala layer. Further, comparison is made with data obtained using glow-discharge optical emission spectroscopy, where elemental fluorine can only be detected using a neon plasma. The ionization mechanisms responsible for the formation of negative ions in glow discharge time-of-flight mass spectrometry are briefly discussed.

Pulsed radiofrequency glow discharge time-of-flight mass spectrometry for molecular depth profiling of polymer-based films.

We demonstrate the potential of an innovative technique, pulsed radiofrequency glow discharge time-of-flight mass spectrometry, for the molecular depth profiling of polymer materials. The technique benefits from the presence, in the afterglow of the pulsed glow discharge, of fragment ions that can be related to the structures of the polymers under study. Thin films of different polymers (PMMA, PET, PAMS, PS) were successfully profiled with retention of molecular information along the profile. Multilayered structures of the above polymers were also profiled, and it was possible to discriminate among layers having similar elemental composition but different polymer structure.