Alloy-Free Band Gap Tuning across the Visible Spectrum.

We present evidence, from theory and experiment, that ZnSnN_{2} and MgSnN_{2} can be used to match the band gap of InGaN without alloying-by exploiting cation disorder in a controlled fashion. We base this on the determination of S, the long-range order parameter of the cation sublattice, for a series of epitaxial thin films of ZnSnN_{2} and MgSnN_{2} using three different techniques: x-ray diffraction, Raman spectroscopy, and in situ electron diffraction. We observe a linear relationship between S^{2} and the optical band gap of both ZnSnN_{2} (1.12-1.98 eV) and MgSnN_{2} (1.87-3.43 eV). The results clearly demonstrate the correlation between controlled heterovalent cation ordering and the optical band gap, which applies to a broad group of emerging ternary heterovalent compounds and has implications for similar trends in other material properties besides the band gap.

Silicon Photomultipliers for Deep Tissue Cerenkov Emission Detection During External Beam Radiotherapy.

Cerenkov Emission (CE) during external beam radiation therapy (EBRT) from a linear accelerator (Linac) has been demonstrated as a useful tool for radiotherapy quality assurance and potentially other applications for online tracking of tumors during treatment delivery. However, some of the current challenges that are impacting the potential of CE are related to the limited detection sensitivity and the lack of flexible tools to fit into an already complex treatment delivery environment. Silicon photomultiplier (SiPM) solid-state devices are new promising tools for low light detection due to their extreme sensitivity that mirrors photomultiplier tubes and yet have a form factor that is similar to silicon photodiodes, allowing for improved flexibility in device design that may help in the process of wider clinical applicability. In this work, we assess the feasibility of using SiPMs to detect CE during EBRT from a Linac and contrast their performance with commercially available silicon photodiodes (PDs). We demonstrate the feasibility of the SiPM based probes for standard dosimetry measurements. We also demonstrate that CE optical signals can be detected from tissue depths about five times greater than that for standard probes based on PDs, making our SiPM probe an enabling technology of CE measurements, particularly for deep tissue applications.

Printing of small molecular medicines from the vapor phase.

There is growing need to develop efficient methods for early-stage drug discovery, continuous manufacturing of drug delivery vehicles, and ultra-precise dosing of high potency drugs. Here we demonstrate the use of solvent-free organic vapor jet printing to deposit nanostructured films of small molecular pharmaceutical ingredients, including caffeine, paracetamol, ibuprofen, tamoxifen, BAY 11-7082 and fluorescein, with accuracy on the scale of micrograms per square centimeter, onto glass, Tegaderm, Listerine tabs, and stainless steel microneedles. The printed films exhibit similar crystallographic order and chemistry as the original powders; controlled, order-of-magnitude enhancements of dissolution rate are observed relative to powder-form particles. In vitro treatment of breast and ovarian cancer cell cultures in aqueous media by tamoxifen and BAY 11-7082 films shows similar behavior to drugs pre-dissolved in dimethyl sulfoxide. The demonstrated precise printing of medicines as films, without the use of solvents, can accelerate drug screening and enable continuous manufacturing, while enhancing dosage accuracy.Traditional approaches used in the pharmaceutical industry are not precise or versatile enough for customized medicine formulation and manufacture. Here the authors produce a method to form coatings, with accurate dosages, as well as a means of closely controlling dissolution kinetics.

Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.

We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO3 thin films, which comprises a tetragonal-like (T') and an intermediate S' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S' phase is energetically very close to the T' phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T' and S' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S' and T' polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S' to T' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Ultrabroadband spectral beam combiner spanning over three octaves.

We report the design, build, and test of a multispectral laser beam combining collimator with a spectral range in excess of three octaves. The device is based on a sapphire wedge prism, calcium fluoride, and sapphire collimating doublet lens and fiber optic inputs and is designed to operate from ultraviolet (355 nm) to mid-infrared (4075 nm) wavelengths. Five laser sources at different wavelengths were used to validate the concept. The device produced full-angle beam divergence of between 0.1 and 0.2 mrad from 355 to 1908 nm. The bore-sight error with respect to the design wavelength of 1064 nm was 0.07 mrad for 532 nm, 0.14 mrad for 355 and 1908 nm, and 2.4 mrad for 4075 nm. The results presented here represent, to the authors' knowledge, the widest spectral range of a laser beam combiner yet demonstrated.

Coherent control of GHz resonant modes by an integrated acoustic etalon.

By carefully tuning the thickness of a compliant thin film placed within an acoustic cavity, we achieve coherent control of the cavity's acoustic resonances, analogous to the operation of an optical etalon. This technique is demonstrated using a supported membrane oscillator in which multiple high-frequency harmonic resonances are simultaneously optoexcited by an ultrafast laser. Theoretical and computational methods are used to analyze the selective strengthening or suppression of these resonances by constructive or destructive interference.

The presence of a (1 × 1) oxygen overlayer on ZnO(0001) surfaces and at Schottky interfaces.

The atomic surface and interface structures of uncoated and metal-coated epi-polished ZnO(0001) Zn-polar wafers were investigated via surface x-ray diffraction. All uncoated samples showed the presence of a fully occupied (1 × 1) overlayer of oxygen atoms located at the on-top position above the terminating Zn atom, a structure predicted to be unstable by several density functional theory calculations. The same oxygen overlayer was clearly seen at the interface of ZnO with both elemental and oxidized metal Schottky contact layers. No significant atomic relaxations were observed at surfaces and interfaces processed under typical device fabrication conditions.

Experimental system for one-dimensional rotational brownian motion.

We present here an experimental, strictly one-dimensional rotational system, made by using single magnetic Janus particles in a static magnetic field. These particles were half-coated with a thin metallic film, and by turning on a properly oriented external static magnetic field, we monitor the rotational brownian motion of single particles, in solution, around the desired axis. Bright-field microscopy imaging provides information on the particle orientation as a function of time. Rotational diffusion coefficients are derived for one-dimensional rotational diffusion, both for a single rotating particle and for a cluster of four such particles. Over the studied time domain, up to 10 s, the variation of the angle of rotation is strictly brownian; its probability distribution function is gaussian, and the mean squared angular displacement is linear in time, as expected for free diffusion. Values for the rotational diffusion coefficients were also determined. Monte Carlo and hydrodynamic simulations agree well with the experimental results.

Surface x-ray diffraction results on the III-V droplet heteroepitaxy growth process for quantum dots: recent understanding and open questions.

In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate ("nano-drilling") is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

Atomic-scale mapping of quantum dots formed by droplet epitaxy.

Quantum dots (QDs) have applications in optoelectronic devices, quantum information processing and energy harvesting. Although the droplet epitaxy fabrication method allows for a wide range of material combinations to be used, little is known about the growth mechanisms involved. Here we apply direct X-ray methods to derive sub-ångström resolution maps of QDs crystallized from indium droplets exposed to antimony, as well as their interface with a GaAs (100) substrate. We find that the QDs form coherently and extend a few unit cells below the substrate surface. This facilitates a droplet-substrate exchange of atoms, resulting in core-shell structures that contain a surprisingly small amount of In. The work provides the first atomic-scale mapping of the interface between epitaxial QDs and a substrate, and establishes the usefulness of X-ray phasing techniques for this and similar systems.

Wideband detection of transient solid-state dynamics using ultrafast fiber lasers and asynchronous optical sampling.

We demonstrate optical time-domain spectroscopy from femtoseconds to nanoseconds using an ultrafast dual-fiber-laser system with kilohertz continuous scanning rates. Utilizing different wavelengths for the pump and probe beams, we exploit this system's broad range of timescales for quantitative studies of thermal transport and the detection of coherent spin and lattice excitations in epitaxial magnetic thin films. The extraordinary temporal dynamic range provides a way to connect the fast and slow timescales in the observation of dissipation and decoherence processes.

X-ray synchrotron studies of ultrafast crystalline dynamics.

Ultrafast X-ray experiments at synchrotron sources hold tremendous promise for measuring the atomistic dynamics of materials under a wide variety of transient conditions. In particular, the marriage of synchrotron radiation and ultrafast laser technology is opening up a new frontier of materials research. Structural changes initiated by femtosecond laser pulses can be tracked in real time using time-resolved X-ray diffraction on picosecond time scales or shorter. Here, research at the Advanced Photon Source is described, illustrating the opportunities for ultrafast diffraction with some recent work on the generation of impulsive strain, coherent phonon generation and supersonic diffusion of electron-hole plasmas. The flexibility of time-resolved Bragg and Laue diffraction geometries are both utilized to illuminate the strain generation and evolution process. Time-resolved X-ray science will become increasingly important with the construction of linac-based ultrafast X-ray sources.

Concentration fluctuations in the binary mixture hexane-nitrobenzene with static and dynamic x-ray scattering.

We report on a small-angle x-ray scattering study of the hexane-nitrobenzene binary fluid mixture near its critical point. The use of an ultrabright x-ray undulator synchrotron source enabled us to measure the temperature dependence of the static structure factor with unprecedented contrast, and the large coherent flux of this source provided a probe for the fluctuation dynamics via the x-ray photon correlation spectroscopy technique. We find that the intensity and correlation lengths diverge with the expected three-dimensional Ising critical exponents, and the dynamical correlation function decays exponentially with correlation times as small as 250 micros. In the range of wave vector studied here (1.2-2.6 x 10(-3) A(-1)) the concentration fluctuations relaxed diffusively with a diffusion constant consistent with that determined from visible light scattering measurements.

Direct determination of epitaxial interface structure in Gd2O3 passivation of GaAs.

Obtaining accurate structural information on epitaxial films and interfaces is nowhere more critical than in semiconductor passivation layers, where details of the atomic structure and bonding determine the nature of the interface electronic states. Various non-destructive methods have been used to investigate the structure of films and interfaces, but their interpretation is model-dependent, leading occasionally to wrong conclusions. We have developed a new X-ray method for the direct determination of epitaxial structures, coherent Bragg rod analysis (COBRA). The usefulness of our technique is demonstrated by mapping, with atomic precision, the structure of the interfacial region of a Gd2O3 film grown epitaxially on a (100) GaAs substrate. Our findings reveal interesting behaviour not previously suggested by existing structural methods, in particular a lock-in of the in-plane Gd atomic positions to those of the Ga/As atoms of the substrate. Moreover, we find that the bulk stacking of the Gd2O3 atomic layers is abandoned in favour of a new structure that is directly correlated with the stacking sequence of the substrate. These results have important implications for Gd2O3 as an effective passivation layer for GaAs (ref. 7). Our work shows that the COBRA technique, taking advantage of the brilliance of insertion device synchrotron X-ray sources, is widely applicable to epitaxial films and interfaces.