RESUMEN
N-type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single-band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n-type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n-type AgCuTe-alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi-coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi-coherent phase interface effectively scatters low-frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high-temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n-type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.
RESUMEN
The manipulation of defect chemistry is crucial in the design of high-performance thermoelectric materials. Studies have demonstrated that alloying compounds within the I-V-VI2 family, such as AgSbTe2, NaSbTe2, etc., can effectively enhance the thermoelectric performance of SnTe by controlling the hole concentration and reducing the lattice thermal conductivity. In this paper, samples of SnTe alloyed with MnSb2Se4 were prepared, and the microstructure, electrical properties, and thermal properties were thoroughly investigated. Based on SEM and TEM analysis, it was observed that MnSb2Se4 can dissolve into SnTe during the preparation of the samples, which leads to the formation of various secondary phases with different compositions and point defects. Consequently, the lattice thermal conductivity is reduced to 0.44 W m-1 K-1 at 800 K, approaching the amorphous limit. Furthermore, the diffusion of the Mn and Sb elements leads to a significant improvement in the Seebeck coefficient through valence band convergence. The vacancy concentration in SnTe can also be modulated by alloying with MnSb2Se4. The findings indicated that MnSb2Se4 alloying can enhance the thermoelectric performance of SnTe through increasing the vacancy concentration, promoting valence band convergence, and introducing secondary phases. Consequently, a ZT value of 1.36 at 800 K for Sn1.03Te-5%MnSb2Se4 can be achieved.
