RESUMEN
Reversible optical regulation has potential applications in optical anti-counterfeiting, storage, and catalysis. Compared to common power materials, the reverse opal structure has a larger specific surface area and an increased contact area for optical regulation, which is expected to achieve higher regulation rates. However, it is difficult to achieve reversible and repeatable regulation of the luminescent properties of photonic crystals, especially with the current research on the structural collapse of photonic crystals. In this work, WO3: Yb3+, Er3+ inverse photonic crystals were prepared by the template approach, and reversible multi-mode optical modification was investigated. Upon heat treatment in a reducing atmosphere or air, the color of the photonic crystals can reversibly change from light yellow to dark green, accompanied by changes in absorption and upconversion of luminescence intensity. The stability and fatigue resistance of this reversible optical modification ability were explored through cyclic experiments, providing potential practical applications for photocatalysis, optical information storage, and electrochromism.
RESUMEN
A unique technique to passivate both bottom and top sides of perovskite has been successfully developed to achieve highly efficient inverted perovskite light-emitting diodes (PeLEDs). For the bottom passivation, an organic/inorganic hybrid electron transporting layer (ETL) replaces the widely adopted inorganic ETL to overcome the disadvantages of the pure inorganic ETL. The ZPM (ZnO-in-polymer matrix) ETL, which consists of ZnO nanoparticles blended into polyvinylpyrrolidone, not only passivates the surface defects of ZnO nanoparticles, but also improves the morphology and stability of FAPbBr3 film. For the top passivation, smaller grains and a FAPbBr3/PEA2PbBr4 3D/2D hybrid structure are obtained by applying a small amount of PEABr solution. The synergetic interplay of organic/inorganic hybrid ETL and organic halide salt surface modification substantially shrinks the grain size to facilitate radiative recombination, and suppresses non-radiative recombination both at the interface of ETL/perovskite and HTL/perovskite, and in the perovskite layer. As a result, the highly efficient green PeLED sets a new record of device performance for FAPbBr3-based inverted PeLEDs, with current efficiency of 39.7 cd A-1, external quantum efficiency of 9.0%, power efficiency of 46.4 lm W-1, maximum luminance of 6.03 × 104 cd m-2, and half-lifetime of 297 minutes at an initial brightness of â¼100 cd m-2.
RESUMEN
All-solution-processed pure formamidinium-based perovskite light-emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr3 device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution-processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution-processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W-1 , a peak current efficiency of 21.3 cd A-1 , and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 105 cd m-2 . A record lifetime T50 of 436 s is achieved at the initial brightness of 10 000 cd m-2 . Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn-on voltage is attributed to Auger-assisted energy up-conversion process.
RESUMEN
In all-solution processed inverted quantum dots based light emitting diodes (QLEDs), the solvent erosion on the quantum dot (QD) layer prevents devices from reaching high performance. By employing an orthogonal solvent 1,4-dioxane for the hole transport layer (HTL) poly(9-vinlycarbazole) (PVK), the external quantum efficiencies (EQE) of red QLED is increased 4-fold, while the luminous efficiencies (LE) of blue QLED is enhanced by 25 times, compared to the previous devices' record. To further improve the device efficiency and reduce the efficiency roll-off, solution processed PVK/poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)] (TFB) double-layer HTL is introduced to facilitate hole injection with stepwise energy level. By reducing the hole injection barrier, the turn-on voltage of QLEDs decreases from 3.4 to 2.7 V for red, from 5.1 to 2.7 V for green, and from 5.3 to 4.1 V for blue. The peak LE reach 22.1 cd/A, 21.4 cd/A, and 1.99 cd/A, while the maximum EQE reach 12.7%, 5.29%, and 5.99%, for red, green, and blue QLEDs, respectively. To the best of our knowledge, the red and blue QLEDs exhibit the best device performance among all the all-solution processed inverted QLEDs. In addition, the blue QLED is the champion among all the inverted QLEDs, including the devices fabricated by thermal evaporation.
