RESUMEN
The microtubes made through rolling-up of strain-engineered nanomembranes have received growing research attention after their first invention due to the technology's high flexibility, integrability, and versatility. These rolled-up microtubes have been used for a variety of device applications including sensors, batteries and transistors, among others. This paper reports the development of highly sensitive whispering-gallery mode (WGM) chemical sensors based on rolled-up microtube optical microcavities (RUM-OCs). For the first time, such microcavities were batch fabricated through rolling-up of plasma-enhanced chemical vapor deposition (PECVD)-synthesized SiO x /SiN x bilayer nanomembranes, which have better optical properties than the conventional electron-beam-deposited SiO/SiO2 bilayers. Benefiting from the high refractive index (RI) of PECVD-deposited SiN x , our RUM-OC shows an enhanced quality factor of 880 that is much higher than that (50) of a SiO/SiO2 RUM-OC with the same dimensions. The developed RUM-OC is used for sensitive WGM solvent sensing, and demonstrate a limit of detection of 10-4 refractive index unit (RIU), which is 10 times lower than that (10-3 RIU) of a SiO/SiO2 RUM-OC.
RESUMEN
A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
RESUMEN
We describe methods of Ga droplet consumption in Ga-assisted GaAs nanowires, and their impact on the crystal structure at the tip of nanowires. Droplets are consumed under different group V flux conditions and the resulting tip crystal structure is examined by transmission electron microscopy. The use of GaAsP marker layers provides insight into the behavior of the Ga droplet during different droplet consumption conditions. Lower group V droplet supersaturations lead to a pure zincblende stacking-fault-free tip crystal structure, which improved the performance of a nanowire-based photovoltaic device.
RESUMEN
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 - 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated.
