RESUMEN
Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO2 has been widely used as a buffer layer in the top cells because it enables conformal, pinhole-free, and highly transparent buffer layer formation. In this work, the effects of various electrical properties of SnO2 and C60 layers on the carrier transport characteristics and the performance of the final devices were investigated using a numerical simulation method, which was established based on real experimental data to increase the validity of the model. It was found that the band alignment at the SnO2/C60 interface does, indeed, have a significant impact on the electron transport. In addition, as a general design rule, it was suggested that at first, the conduction band offset (CBO) between C60 and SnO2 should be chosen so as not to be too negative. However, even in a case in which this CBO condition is not met, we would still have the means to improve the electron transport characteristics by increasing the doping density of at least one of the two layers of C60 and/or SnO2, which would enhance the built-in potential across the perovskite layer and the electron extraction at the C60/SnO2 interface.
