Inkjet printed IGZO memristors with volatile and non-volatile switching.

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 105 s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth < - 0.65 V) and a characteristic time (τ) of 0.75 ± 0.12 ms when a single pulse of - 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications.

Low-Temperature Solution-Based Molybdenum Oxide Memristors.

Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO3) memristors under different annealing temperatures (200 to 400 °C). A MoO3 ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo6+ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Endurance tests demonstrate stable memristors, indicating their robust nature after multiple cycles. Memristors annealed at 250 °C exhibit a nonvolatile behavior with a retention time up to 105 s under ambient air conditions. The high reproducibility observed in these memristors highlights their potential for practical applications and scalability.

The Role of Hydrogen Incorporation into Amorphous Carbon Films in the Change of the Secondary Electron Yield.

Over the last few years, there has been increasing interest in the use of amorphous carbon thin films with low secondary electron yield (SEY) to mitigate electron multipacting in particle accelerators and RF devices. Previous works found that the SEY increases with the amount of incorporated hydrogen and correlates with the Tauc gap. In this work, we analyse films produced by magnetron sputtering with different contents of hydrogen and deuterium incorporated via the target poisoning and sputtering of CxDy molecules. XPS was implemented to estimate the phase composition of the films. The maximal SEY was found to decrease linearly with the fraction of the graphitic phase in the films. These results are supported by Raman scattering and UPS measurements. The graphitic phase decreases almost linearly for hydrogen and deuterium concentrations between 12% and 46% (at.), but abruptly decreases when the concentration reaches 53%. This vanishing of the graphitic phase is accompanied by a strong increase of SEY and the Tauc gap. These results suggest that the SEY is not dictated directly by the concentration of H/D, but by the fraction of the graphitic phase in the film. The results are supported by an original model used to calculate the SEY of films consisting of a mixture of graphitic and polymeric phases.

New Protic Ionic Liquids as Potential Additives to Lubricate Si-Based MEMS/NEMS.

The motivation for this work was to develop new protic ionic liquids (PILs) as additives for the lubrication of micro and nanoelectromechanical systems (MEMS and NEMS). Ten PILs based on the combination of methylimidazolium ([MIMH]), 4-picolinium ([4-picH]), pyridinium ([PyrH]), 1,8-diazabicyclo[5.4.0]-undec-7-ene-8-ium ([DBUH]) and tetramethylguanidinium ([TMGH]) cations with hydrogen sulfate([HSO4]) and mesylate ([MeSO3]) anions were tested as additives in polyethylene glycol (PEG200) to lubricate steel/silicon and silicon/silicon contacts. The best additive was [4-picH][HSO4], which adsorbed strongly on the Si surface, leading to a protective film that reduced wear by up to 15 times compared to PEG200.

Microwave Synthesis of Visible-Light-Activated g-C3N4/TiO2 Photocatalysts.

The preparation of visible-light-driven photocatalysts has become highly appealing for environmental remediation through simple, fast and green chemical methods. The current study reports the synthesis and characterization of graphitic carbon nitride/titanium dioxide (g-C3N4/TiO2) heterostructures through a fast (1 h) and simple microwave-assisted approach. Different g-C3N4 amounts mixed with TiO2 (15, 30 and 45 wt. %) were investigated for the photocatalytic degradation of a recalcitrant azo dye (methyl orange (MO)) under solar simulating light. X-ray diffraction (XRD) revealed the anatase TiO2 phase for the pure material and all heterostructures produced. Scanning electron microscopy (SEM) showed that by increasing the amount of g-C3N4 in the synthesis, large TiO2 aggregates composed of irregularly shaped particles were disintegrated and resulted in smaller ones, composing a film that covered the g-C3N4 nanosheets. Scanning transmission electron microscopy (STEM) analyses confirmed the existence of an effective interface between a g-C3N4 nanosheet and a TiO2 nanocrystal. X-ray photoelectron spectroscopy (XPS) evidenced no chemical alterations to both g-C3N4 and TiO2 at the heterostructure. The visible-light absorption shift was indicated by the red shift in the absorption onset through the ultraviolet-visible (UV-VIS) absorption spectra. The 30 wt. % of g-C3N4/TiO2 heterostructure showed the best photocatalytic performance, with a MO dye degradation of 85% in 4 h, corresponding to an enhanced efficiency of almost 2 and 10 times greater than that of pure TiO2 and g-C3N4 nanosheets, respectively. Superoxide radical species were found to be the most active radical species in the MO photodegradation process. The creation of a type-II heterostructure is highly suggested due to the negligible participation of hydroxyl radical species in the photodegradation process. The superior photocatalytic activity was attributed to the synergy of g-C3N4 and TiO2 materials.

Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaics.

The present contribution aims to enhance solar cells' performance via the development of advanced luminescent down-shifting based on encapsulated nanostructured perovskite materials. Here, thin films of inorganic lead halide (CsPbBr3) perovskite nanocrystal luminophores were synthetized, by hot-injection, deposited on glass substrates by spin-coating, and encapsulated with parylene type C, via chemical vapor deposition, to protect and stabilize the films. The optical properties of these thin films were characterized by absorption, emission and 2D contour spectra, their structure by X-ray diffraction and X-ray photoelectron spectroscopy, and the morphology by Scanning Transmission Electron microscopy. I-V curve and spectral response nanocrystalline silicon photovoltaic (nc-Si:H PV) cells were studied in the absence and presence of the perovskite and parylene luminescent down-shifting layers. The incorporation of the CsPbBr3 nanocrystals and their encapsulation with the parylene type C polymeric coating led to an increase in the current generated and the spectral response of the PV cells in the regime of the nanocrystals' fluorescence emission. A 3.1% increase in the short circuit current density and a 5.6% increase in the power conversion efficiency were observed.

Bandlike Transport in FaPbBr3 Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity.

Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3 perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm2 V-1 s-1 at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼1016 Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.

Biocompatible Parylene-C Laser-Induced Graphene Electrodes for Microsupercapacitor Applications.

Laser irradiation of polymeric materials has drawn great attention as a fast, simple, and cost-effective method for the formation of porous graphene films that can be subsequently fabricated into low-cost and flexible electronic and energy-storage devices. In this work, we report a systematic study of the formation of laser-induced graphene (LIG) with sheet resistances as low as 9.4 Ω/sq on parylene-C ultrathin membranes under a CO2 infrared laser. Raman analysis proved the formation of the multilayered graphenic material, with ID/IG and I2D/IG peak ratios of 0.42 and 0.65, respectively. As a proof of concept, parylene-C LIG was used as the electrode material for the fabrication of ultrathin, solid-state microsupercapacitors (MSCs) via a one-step, scalable, and cost-effective approach, aiming at future flexible and wearable applications. The produced LIG-MSC on parylene-C exhibited good electrochemical behavior, with a specific capacitance of 1.66 mF/cm2 and an excellent cycling stability of 96% after 10 000 cycles (0.5 mA/cm2). This work allows one to further extend the knowledge in LIG processes, widening the group of precursor materials as well as promoting future applications. Furthermore, it reinforces the potential of parylene-C as a key material for next-generation biocompatible and flexible electronic devices.

Emergent solution based IGZO memristor towards neuromorphic applications.

Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems.

Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors.

Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, a mobility of 6.65 cm2/V.s, and a carrier concentration of 1.72 × 1019 cm-3. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 -3 Ω.cm, a mobility of 21 cm2/V.s, and a carrier concentration of 7.98 × 1019 cm-3, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.

Bonding antimicrobial rhamnolipids onto medical grade PDMS: A strategy to overcome multispecies vascular catheter-related infections.

In clinic there is a demand to solve the drawback of medical devices multispecies related infections. Consequently, different biomaterial surfaces, such as vascular catheters, urgently need improvement regarding their antifouling/antimicrobial properties. In this work, we covalently functionalized medical grade polydimethylsiloxane (PDMS) with antimicrobial rhamnolipids to investigate the biomaterial surface activity towards mono and dual species biofilms. Preparation of surfaces with "piranha" oxidation, followed by APTES bonding and carbodiimide reaction with rhamnolipids effectively bonded these compounds to PDMS surface as confirmed by FTIR-ATR and XPS analysis. Generated surfaces were active towards S. aureus biofilm formation showing a 4.2 log reduction while with S. epidermidis and C. albicans biofilms a reduction of 1.2 and 1.0 log reduction, respectively, was observed. Regarding dual-species testing the higher biofilm log reduction observed was 1.9. Additionally, biocompatibility was assessed by cytocompatibility towards human fibroblastic cells, low platelet activation and absence of vascular irritation. Our work not only sheds light on using covalently bonded rhamnolipids towards dual species biofilms but also highlights the biocompatibility of the obtained PDMS surfaces.

Enhanced Fe-TiO2 Solar Photocatalysts on Porous Platforms for Water Purification.

In this study, polyethylene glycol-modified titanium dioxide (PEG-modified TiO2) nanopowders were prepared using a fast solvothermal method under microwave irradiation, and without any further calcination processes. These nanopowders were further impregnated on porous polymeric platforms by drop-casting. The effect of adding iron with different molar ratios (1, 2, and 5%) of iron precursor was investigated. The characterization of the produced materials was carried out by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Optical characterization of all the materials was also carried out. SEM showed that pure TiO2 and Fe-TiO2 nanostructures presented similar nanosized and spherical particles, which uniformly covered the substrates. From XRD, pure TiO2 anatase was obtained for all nanopowders produced, which was further confirmed by Raman spectroscopy on the impregnated substrates. XPS and UV-VIS absorption spectroscopy emission spectra revealed that the presence of Fe ions on the Fe-TiO2 nanostructures led to the introduction of new intermediate energy levels, as well as defects that contributed to an enhancement in the photocatalytic performance. The photocatalytic results under solar radiation demonstrated increased photocatalytic activity in the presence of the 5% Fe-TiO2 nanostructures (Rhodamine B degradation of 85% after 3.5 h, compared to 74% with pure TiO2 for the same exposure time). The photodegradation rate of RhB dye with the Fe-TiO2 substrate was 1.5-times faster than pure TiO2. Reusability tests were also performed. The approach developed in this work originated novel functionalized photocatalytic platforms, which were revealed to be promising for the removal of organic dyes from wastewater.

Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes.

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Control of Eu Oxidation State in Y2O3-xSx:Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study.

Structural and photoluminescence studies were carried out on Eu-doped Y2O3-xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors.

Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device.

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.

Lately, resistive switching memories (ReRAM) have been attracting a lot of attention due to their possibilities of fast operation, lower power consumption and simple fabrication process and they can also be scaled to very small dimensions. However, most of these ReRAM are produced by physical methods and nowadays the industry demands more simplicity, typically associated with low cost manufacturing. As such, ReRAMs in this work are developed from a solution-based aluminum oxide (Al2O3) using a simple combustion synthesis process. The device performance is optimized by two-stage deposition of the Al2O3 film. The resistive switching properties of the bilayer devices are reproducible with a yield of 100%. The ReRAM devices show unipolar resistive switching behavior with good endurance and retention time up to 105 s at 85 °C. The devices can be programmed in a multi-level cell operation mode by application of different reset voltages. Temperature analysis of various resistance states reveals a filamentary nature based on the oxygen vacancies. The optimized film was stacked between ITO and indium zinc oxide, targeting a fully transparent device for applications on transparent system-on-panel technology.