Non-equilibrium compression achieving high sensitivity and linearity for iontronic pressure sensors.

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal detection. However, the current strategies for stabilizing axial microstructures (e.g., micro-pyramids) are mainly susceptible to structural stiffening during compression, thereby limiting the realization of high sensitivity and linearity. Here, we report a bending-induced non-equilibrium compression process that effectively enhances the compressibility of microstructures, thereby crucially improving the efficiency of interfacial area growth of electric double layer (EDL). Based on this principle, we fabricate an iontronic flexible pressure sensor with vertical graphene (VG) array electrodes. Ultra-high sensitivity (185.09 kPa-1) and linearity (R2 = 0.9999) are realized over a wide pressure range (0.49 Pa-66.67 kPa). It also exhibits remarkable mechanical stability during compression and bending. The sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception (MLP) neural network. It opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

High-Performance UV-Vis Broad-Spectra Photodetector Based on a ß-Ga2O3/Au/MAPbBr3 Sandwich Structure.

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of ß-Ga2O3, Au electrodes, and the MAPbBr3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The ß-Ga2O3/Au/MAPbBr3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between ß-Ga2O3 and MAPbBr3, which gives the ß-Ga2O3/Au/MAPbBr3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.

Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge.

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Transmission electron microscopy sample preparation method for micrometer-sized powder particles using focused ion beam.

A TEM sample preparation technique for micrometer-sized powder particles in the 1-10 µm size range is proposed, using a focused ion beam (FIB) system. It is useful for characterizing elemental distributions across an entire cross-section of a particle. It is a simple and universal method without using any embedding agent, enabling the powder particles with different size, shape or orientation to be easily selected based on the SEM observations. The suitable particle is covered with Pt coating layers through an ion-beam-assisted deposition. The Pt coating layers provide sufficient support for the TEM lamella. A small piece of tungsten needle is used as a support under the particle by taking a series of operations using a micromanipulator. The particle can be precisely thinned by the ion beam to be suitable for both TEM observation and EDX elemental mapping. This novel technique reduces the TEM sample preparation time to a few hours, allowing much higher efficiency compared to complicated and time-consuming embedding methods.

Direct Observation of One-Dimensional Peierls-type Charge Density Wave in Twin Boundaries of Monolayer MoTe2.

One-dimensional (1D) metallic mirror-twin boundaries (MTBs) in monolayer transition-metal dichalcogenides exhibit a periodic charge modulation and provide an ideal platform for exploring collective electron behavior in the confined system. The underlying mechanism of the charge modulation and how the electrons travel in 1D structures remain controversial. Here, for the first time, we observed atomic-scale structures of the charge distribution within one period in MTB of monolayer MoTe2 by using scanning tunneling microscopy/spectroscopy. The coexisting apparent periodic lattice distortions and U-shaped energy gap clearly demonstrate a Peierls-type charge density wave (CDW). Equidistant quantized energy levels with varied periodicity are further discovered outside the CDW gap along the metallic MTB. Density functional theory calculations are in good agreement with the gapped electronic structures and reveal that they originate mainly from a Mo 4d orbital. Our work presents hallmark evidence of the 1D Peierls-type CDW on the metallic MTBs and offers opportunities to study the underlying physics of 1D charge modulation.

Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures.

We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.