RESUMEN
This study presents a new mathematical framework for analyzing the behavior of semiconductor elastic materials subjected to an external magnetic field. The framework encompasses the interaction between plasma, thermal, and elastic waves. A novel, fully coupled mathematical model that describes the plasma thermoelastic behavior of semiconductor materials is derived. Our new model is applied to obtain the solution to Danilovskaya's problem, which is formed from an isotropic homogeneous semiconductor material. The Laplace transform is utilized to get the solution in the frequency domain using a direct approach. Numerical methods are employed to calculate the inverse Laplace transform, enabling the determination of the solution in the physical domain. Graphical representations are utilized to depict the numerical outcomes of many physical fields, including temperature, stress, displacement, chemical potential, carrier density, and current carrier distributions. These representations are generated for different values of time and depth of the semiconductor material. Ultimately, we receive a comparison between our model and several earlier fundamental models, which is then graphically represented.
