Cryogenic lithium-niobate-on-insulator optical filter.

Photonic integrated circuits have garnered significant attention and experienced rapid development in recent years. To provide fundamental building blocks for scalable optical classical and quantum information processing, one important direction is to develop cryogenic compatible photonic integrated devices. Here, we prepare one optical filter on a lithium-niobate-on-insulator (LNOI) platform based on a multimode waveguide grating and verify its availability at temperature from 295 to 7 K. We find that the integrated optical filter still shows good quality under cryogenic conditions, and the shift of the working wavelength at different temperatures is well explained by the index variation of the material. These results advance LNOI integrated optical devices in applications under cryogenic conditions.

Ultra-broadband TM-pass polarizer based on anisotropic metamaterials in lithium niobate on an insulator.

An ultra-broadband TM-pass polarizer is designed, fabricated, and experimentally demonstrated based on subwavelength grating (SWG) metamaterials in a lithium niobate on an insulator (LNOI) platform. According to our simulation, the designed device is predicted to work at a 220 nm wavelength range from 1460 to 1680 nm, covering the S-, C-, L-, U-bands of optical fiber communication. By depositing and subsequently etching a silicon nitride thin film atop the LNOI chip, the SWG structures are formed successfully by using complementary metal-oxide semiconductor (CMOS)-compatible fabrication processes. The measured results show a high polarization extinction ratio larger than 20 dB and a relatively low insertion loss below 2.5 dB over a 130 nm wavelength range from 1500 to 1630 nm, mainly limited by the operation bandwidth of our laser source.

Transverse Mode-Encoded Quantum Gate on a Silicon Photonic Chip.

As an important degree of freedom (d.o.f.) in photonic integrated circuits, the orthogonal transverse mode provides a promising and flexible way to increase communication capability, for both classical and quantum information processing. To construct large-scale on-chip multimode multi-d.o.f.s quantum systems, a transverse mode-encoded controlled-NOT (CNOT) gate is necessary. Here, with the help of our new transverse mode-dependent directional coupler and attenuator, we demonstrate the first multimode implementation of a 2-qubit quantum gate. The ability of the gate is demonstrated by entangling two separated transverse mode qubits with an average fidelity of 0.89±0.02 and the achievement of 10 standard deviations of violations in the quantum nonlocality verification. In addition, a fidelity of 0.82±0.01 is obtained from quantum process tomography used to completely characterize the CNOT gate. Our work paves the way for universal transverse mode-encoded quantum operations and large-scale multimode multi-d.o.f.s quantum systems.

Topologically Protected Valley-Dependent Quantum Photonic Circuits.

Topological photonics has been introduced as a powerful platform for integrated optics, since it can deal with robust light transport, and be further extended to the quantum world. Strikingly, valley-contrasting physics in topological photonic structures contributes to valley-related edge states, their unidirectional coupling, and even valley-dependent wave division in topological junctions. Here, we design and fabricate nanophotonic topological harpoon-shaped beam splitters (HSBSs) based on 120-deg-bending interfaces and demonstrate the first on-chip valley-dependent quantum information process. Two-photon quantum interference, namely, Hong-Ou-Mandel interference with a high visibility of 0.956±0.006, is realized with our 50/50 HSBS, which is constructed by two topologically distinct domain walls. Cascading this kind of HSBS together, we also demonstrate a simple quantum photonic circuit and generation of a path-entangled state. Our work shows that the photonic valley state can be used in quantum information processing, and it is possible to realize more complex quantum circuits with valley-dependent photonic topological insulators, which provides a novel method for on-chip quantum information processing.

Supercompact Photonic Quantum Logic Gate on a Silicon Chip.

To build universal quantum computers, an essential step is to realize the so-called controlled-NOT (CNOT) gate. Quantum photonic integrated circuits are well recognized as an attractive technology offering great promise for achieving large-scale quantum information processing, due to the potential for high fidelity, high efficiency, and compact footprints. Here, we demonstrate a supercompact integrated quantum CNOT gate on silicon by using the concept of symmetry breaking of a six-channel waveguide superlattice. The present path-encoded quantum CNOT gate is implemented with a footprint of 4.8×4.45 µm^{2} (∼3λ×3λ) as well as a high-process fidelity of ∼0.925 and a low excess loss of <0.2 dB. The footprint is shrunk significantly by ∼10 000 times compared to those previous results based on dielectric waveguides. This offers the possibility of realizing practical large-scale quantum information processes and paving the way to the applications across fundamental science and quantum technologies.

A Biaxial Strain Sensor Using a Single MoS2 Grating.

In this paper, we report a new type of MoS2-based grating sensor for in-plane biaxial strain gauges with a precision limit of ~ 1‰. The MoS2 grating is numerically simulated with different biaxial strains up to 5%. Our first-principles calculations reveal that the strain sensitivity of the MoS2 reflectance spectrum can be considered an additional strain sensor integrated with the grating structure, enabling the mapping of in-plane biaxial strains. Our experimental studies on a prototype MoS2-grating sensor further confirm that a strain component perpendicular to the grating period can cause intensity peak shifts in the grating's first-order diffraction patterns. This work opens a new path towards the sensing of in-plane biaxial strain within a single-grating device. Our new approach is applicable for other materials that have predictable reflectance response under biaxial strains and the capacity to form a two-dimensional single-crystal layer.

Radial Nanowire Assemblies under Rotating Magnetic Field Enabled Efficient Charge Separation.

Developing efficient charge separation strategies is essential to achieve high-power conversion efficiency in the fields of chemistry, biology, and material science. Herein, we develop a facile strategy for fabrication of unique wafer-scale radial nanowire assemblies by exploiting shear force in rotary solution. The assembly mechanism can be well revealed by the large-scale stochastic dynamics simulation. Free electrons can be rapidly generated to produce quantitatively tunable current output when the radial nanowire assemblies rotate under the magnetic field. Moreover, the photoconductive performance of the radial semiconductor nanowire assemblies can be remarkably enhanced as the electron-hole recombination was retrained by the efficient charge separation under the rotating magnetic field. Such large-scale unique nanowire assemblies will facilitate the design of an efficient charge separation process in biosystem, sensors, and photocatalysis.

Excitation and analyzation of different surface plasmon modes on a suspended Ag nanowire.

Silver nanowires (AgNWs), as one of the most important plasmonic waveguides, can support several different plasmonic modes. These surface plasmon polariton (SPP) modes have different electric field distributions, effective mode areas, propagation lengths and losses and thus can be used for different applications, from efficiently collecting single photons to carrying quantum entanglement. Therefore, the excitation and analysis of these different SPP modes are of pivotal importance for the development of subwavelength optical devices. In this work, we investigate different SPP modes on a suspended AgNW adhered to a fiber taper. Theoretical simulations and experimental results show that the desired SPP modes can be selectively excited by adjusting either the polarization of the excitation light or the coupling length between the fiber taper and the AgNW. Moreover, fundamental and higher-order SPP modes can be distinguished by means of a far-field method. Our results not only enable convenient and controllable excitation of the desired SPP modes but also provide unique insight into the optical properties of plasmonic waveguides.

Generation of multiphoton quantum states on silicon.

Multiphoton quantum states play a critical role in emerging quantum technologies and greatly improve our fundamental understanding of the quantum world. Integrated photonics is well recognized as an attractive technology offering great promise for the generation of photonic quantum states with high-brightness, tunability, stability, and scalability. Herein, we demonstrate the generation of multiphoton quantum states using a single-silicon nanophotonic waveguide. The detected four-photon rate reaches 0.34 Hz even with a low-pump power of 600 µW. This multiphoton quantum state is also qualified with multiphoton quantum interference, as well as quantum state tomography. For the generated four-photon states, the quantum interference visibilities are greater than 95%, and the fidelity is 0.78 ± 0.02. Furthermore, such a multiphoton quantum source is fully compatible with the on-chip processes of quantum manipulation, as well as quantum detection, which is helpful for the realization of large-scale quantum photonic integrated circuits (QPICs) and shows great potential for research in the area of multiphoton quantum science.

On-chip coherent conversion of photonic quantum entanglement between different degrees of freedom.

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.